Loading...NXP BZX585-B10, BZX585-B11, BZX585-B12, BZX585-B13, BZX585-B15 Schematic [ru]
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BZX585 series
Voltage regulator diodes
Product data sheet |
2004 Jun 22 |
Supersedes data of 2004 Mar 26 |
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NXP Semiconductors |
Product data sheet |
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Voltage regulator diodes |
BZX585 series |
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FEATURES
•Total power dissipation: max. 300 mW
•Two tolerance series: ± 2 % and ± 5 %
•Working voltage range: nominal 2.4 V to 75 V (E24 range)
•Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package.
The diodes are available in the normalized E24 ± 2 % (BZX585-B) and ± 5 % (BZX585-C) tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
MARKING
PINNING
PIN |
DESCRIPTION |
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1 |
cathode |
2 |
anode |
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handbook, |
2 |
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1 |
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Top view |
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MAM387 |
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The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE |
NUMBER |
CODE |
NUMBER |
CODE |
NUMBER |
CODE |
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Marking codes for BZX585-B2V4 to BZX585-B75 |
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BZX585-B2V4 |
C1 |
BZX585-B6V2 |
E1 |
BZX585-B16 |
EA |
BZX585-B43 |
EM |
BZX585-B2V7 |
C2 |
BZX585-B6V8 |
E2 |
BZX585-B18 |
EB |
BZX585-B47 |
EN |
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BZX585-B3V0 |
C3 |
BZX585-B7V5 |
E3 |
BZX585-B20 |
EC |
BZX585-B51 |
EP |
BZX585-B3V3 |
C4 |
BZX585-B8V2 |
E4 |
BZX585-B22 |
ED |
BZX585-B56 |
ER |
BZX585-B3V6 |
C5 |
BZX585-B9V1 |
E5 |
BZX585-B24 |
EE |
BZX585-B62 |
ES |
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BZX585-B3V9 |
C6 |
BZX585-B10 |
E6 |
BZX585-B27 |
EF |
BZX585-B68 |
ET |
BZX585-B4V3 |
C7 |
BZX585-B11 |
E7 |
BZX585-B30 |
EG |
BZX585-B75 |
EU |
BZX585-B4V7 |
C8 |
BZX585-B12 |
E8 |
BZX585-B33 |
EH |
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BZX585-B5V1 |
C9 |
BZX585-B13 |
E9 |
BZX585-B36 |
EK |
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BZX585-B5V6 |
C0 |
BZX585-B15 |
E0 |
BZX585-B39 |
EL |
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2004 Jun 22 |
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NXP Semiconductors |
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Product data sheet |
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Voltage regulator diodes |
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BZX585 series |
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TYPE |
MARKING |
TYPE |
MARKING |
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MARKING |
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MARKING |
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NUMBER |
CODE |
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CODE |
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Marking codes for BZX585-C2V4 to BZX585-C75 |
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BZX585-C2V4 |
F1 |
BZX585-C6V2 |
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H1 |
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BZX585-C16 |
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HA |
BZX585-C43 |
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HM |
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BZX585-C2V7 |
F2 |
BZX585-C6V8 |
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H2 |
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BZX585-C18 |
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HB |
BZX585-C47 |
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HN |
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BZX585-C3V0 |
F3 |
BZX585-C7V5 |
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H3 |
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BZX585-C20 |
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HC |
BZX585-C51 |
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HP |
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BZX585-C3V3 |
F4 |
BZX585-C8V2 |
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H4 |
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BZX585-C22 |
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HD |
BZX585-C56 |
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HR |
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BZX585-C3V6 |
F5 |
BZX585-C9V1 |
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H5 |
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BZX585-C24 |
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HE |
BZX585-C62 |
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HS |
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BZX585-C3V9 |
F6 |
BZX585-C10 |
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H6 |
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BZX585-C27 |
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HF |
BZX585-C68 |
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HT |
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BZX585-C4V3 |
F7 |
BZX585-C11 |
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H7 |
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BZX585-C30 |
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HG |
BZX585-C75 |
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HU |
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BZX585-C4V7 |
F8 |
BZX585-C12 |
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H8 |
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BZX585-C33 |
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HH |
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BZX585-C5V1 |
F9 |
BZX585-C13 |
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H9 |
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BZX585-C36 |
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HK |
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BZX585-C5V6 |
F0 |
BZX585-C15 |
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H0 |
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BZX585-C39 |
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HL |
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ORDERING INFORMATION |
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TYPE |
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PACKAGE |
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NUMBER |
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NAME |
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DESCRIPTION |
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VERSION |
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BZX585-B2V4 |
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− |
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Plastic surface mounted package; 2 leads |
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SOD523 |
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to |
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BZX585-B75 |
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BZX585-C2V4 |
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Plastic surface mounted package; 2 leads |
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SOD523 |
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to |
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BZX585-C75 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 60134). |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
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UNIT |
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IF |
continuous forward current |
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− |
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200 |
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mA |
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IZSM |
non-repetitive peak reverse |
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tp = 100 μs; square wave; |
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see Tables 1 and 2 |
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current |
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Tamb = 25 °C prior to surge |
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PZSM |
non-repetitive peak reverse |
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tp = 100 μs; square wave; |
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− |
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40 |
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W |
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power dissipation |
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Tamb = 25 °C prior to surge |
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Ptot |
total power dissipation |
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Tamb = 25 °C; note 1 |
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300 |
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mW |
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Tstg |
storage temperature |
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−65 |
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+150 |
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°C |
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Tj |
junction temperature |
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−65 |
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+150 |
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°C |
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Note
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2004 Jun 22 |
3 |
NXP Semiconductors |
|
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Product data sheet |
||
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|
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Voltage regulator diodes |
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BZX585 series |
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ELECTRICAL CHARACTERISTICS |
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Total BZX585-B and C series |
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Tamb = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
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UNIT |
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VF |
forward voltage |
IF = 10 mA; see Fig.2 |
0.9 |
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V |
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IF = 100 mA; see Fig.2 |
1.1 |
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V |
IR |
reverse current |
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BZX585-B/C2V4 |
VR = 1 V |
50 |
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μA |
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BZX585-B/C2V7 |
VR = 1 V |
20 |
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μA |
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BZX585-B/C3V0 |
VR = 1 V |
10 |
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μA |
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BZX585-B/C3V3 |
VR = 1 V |
5 |
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μA |
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BZX585-B/C3V6 |
VR = 1 V |
5 |
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μA |
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BZX585-B/C3V9 |
VR = 1 V |
3 |
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μA |
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BZX585-B/C4V3 |
VR = 1 V |
3 |
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μA |
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BZX585-B/C4V7 |
VR = 2 V |
3 |
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μA |
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BZX585-B/C5V1 |
VR = 2 V |
2 |
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μA |
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BZX585-B/C5V6 |
VR = 2 V |
1 |
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μA |
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BZX585-B/C6V2 |
VR = 4 V |
3 |
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μA |
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BZX585-B/C6V8 |
VR = 4 V |
2 |
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μA |
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BZX585-B/C7V5 |
VR = 5 V |
1 |
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μA |
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BZX585-B/C8V2 |
VR = 5 V |
700 |
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nA |
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BZX585-B/C9V1 |
VR = 6 V |
500 |
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nA |
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BZX585-B/C10 |
VR = 7 V |
200 |
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nA |
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BZX585-B/C11 |
VR = 8 V |
100 |
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nA |
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BZX585-B/C12 |
VR = 8 V |
100 |
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nA |
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BZX585-B/C13 |
VR = 8 V |
100 |
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nA |
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BZX585-B/C15 to 75 |
VR = 0.7VZnom |
50 |
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nA |
2004 Jun 22 |
4 |
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