NXP BC327, BC327-16, BC327-25, BC327-40, BC807 Schematic [ru]

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Rev. 06 — 17 November 2009

Product data sheet

1.Product profile

1.1General description

PNP general-purpose transistors.

Table 1. Product overview

Type number	Package		NPN complement
	NXP	JEITA
BC807	SOT23	-	BC817
BC807W	SOT323	SC-70	BC817W
BC327[1]	SOT54 (TO-92)	SC-43A	BC337

[1]Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2Features

High current

Low voltage

1.3Applications

General-purpose switching and amplification

1.4Quick reference data

Table 2.	Quick reference data
Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	collector-emitter voltage	open base;	-	-	−45	V
		IC = 10 mA
IC	collector current (DC)		-	-	−500	mA
ICM	peak collector current		-	-	−1	A
hFE	DC current gain	IC = −100 mA;	[1]
		VCE = −1 V

	BC807; BC807W; BC327	100	-	600
	BC807-16; BC807-16W; BC327-16	100	-	250
	BC807-25; BC807-25W; BC327-25	160	-	400
	BC807-40; BC807-40W; BC327-40	250	-	600

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

NXP Semiconductors	BC807; BC807W; BC327
	45 V, 500 mA PNP general-purpose transistors

2. Pinning information

Table 3.	Pinning
Pin	Description	Simplified outline		Symbol
SOT23
1	base	3		3
2	emitter
3	collector			1
		1	2
				2
				sym013
SOT323
1	base	3		3
2	emitter
3	collector			1
				2
		1	2	sym013
		sot323_so
SOT54
1	emitter			3
2	base
3	collector		1	2
			2
			3	1
		001aab347
				006aaa149
SOT54A
1	emitter			3
2	base
3	collector		1	2
			2
			3	1
		001aab348
				006aaa149
SOT54 variant
1	emitter			3
2	base
3	collector		1	2
			2
			3	1
		001aab447
				006aaa149

BC807_BC807W_BC327_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

2 of 19

NXP Semiconductors	BC807; BC807W; BC327
	45 V, 500 mA PNP general-purpose transistors

3. Ordering information

Table 4.	Ordering information
Type number[1]		Package
		Name	Description	Version
BC807	-		plastic surface mounted package; 3 leads	SOT23
BC807W		SC-70	plastic surface mounted package; 3 leads	SOT323
BC327[2]		SC-43A	plastic single-ended leaded (through hole) package;	SOT54
			3 leads

[1]Valid for all available selection groups.

[2]Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

Table 5. Marking codes

Type number	Marking code[1]
BC807	5D*
BC807-16	5A*
BC807-25	5B*
BC807-40	5C*
BC807W	5D*
BC807-16W	5A*
BC807-25W	5B*
BC807-40W	5C*
BC327	C327
BC327-16	C32716
BC327-25	C32725
BC327-40	C32740

[1]* = -: made in Hong Kong

*= p: made in Hong Kong

*= t: made in Malaysia

*= W: made in China

BC807_BC807W_BC327_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

3 of 19

NXP Semiconductors			BC807; BC807W; BC327
			45 V, 500 mA PNP general-purpose transistors
5. Limiting values
	Table 6.	Limiting values
	In accordance with the Absolute Maximum Rating System (IEC 60134).
	Symbol	Parameter	Conditions		Min	Max	Unit
	VCBO	collector-base voltage	open emitter		-	−50	V
	VCEO	collector-emitter voltage	open base;		-	−45	V
			IC = 10 mA
	VEBO	emitter-base voltage	open collector		-	−5	V
	IC	collector current (DC)			-	−500	mA
	ICM	peak collector current			-	−1	A
	IBM	peak base current			-	−200	mA
	Ptot	total power dissipation
		BC807	Tamb ≤ 25 °C	[1][2]	-	250	mW
		BC807W	Tamb ≤ 25 °C	[1][2]	-	200	mW
		BC327	Tamb ≤ 25 °C	[1][2]	-	625	mW
	Tstg	storage temperature			−65	+150	°C
	Tj	junction temperature			-	150	°C
	Tamb	ambient temperature			−65	+150	°C

[1]Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]Valid for all available selection groups.

6.Thermal characteristics

Table 7.	Thermal characteristics
Symbol		Parameter	Conditions		Min	Typ	Max	Unit
Rth(j-a)		thermal resistance from
		junction to ambient
		BC807	Tamb ≤ 25 °C	[1][2]	-	-	500	K/W
		BC807W	Tamb ≤ 25 °C	[1][2]	-	-	625	K/W
		BC327	Tamb ≤ 25 °C	[1][2]	-	-	200	K/W

[1]Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]Valid for all available selection groups.

BC807_BC807W_BC327_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

4 of 19

NXP Semiconductors			BC807; BC807W; BC327
			45 V, 500 mA PNP general-purpose transistors
7. Characteristics
Table 8.	Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol		Parameter	Conditions		Min	Typ	Max	Unit
ICBO		collector-base cut-off current	IE = 0 A; VCB = −20 V		-	-	−100	nA
			IE = 0 A; VCB = −20 V;		-	-	−5	μA
			Tj = 150 °C
IEBO		emitter-base cut-off current	IC = 0 A; VEB = −5 V		-	-	−100	nA
hFE		DC current gain	IC = −100 mA; VCE = −1 V	[1]
		BC807; BC807W; BC327			100	-	600
		BC807-16; BC807-16W;			100	-	250
		BC327-16
		BC807-25; BC807-25W;			160	-	400
		BC327-25
		BC807-40; BC807-40W;			250	-	600
		BC327-40
hFE		DC current gain	IC = −500 mA; VCE = −1 V	[1]	40	-	-
VCEsat		collector-emitter saturation	IC = −500 mA; IB = −50 mA	[1]	-	-	−700	mV
		voltage
VBE		base-emitter voltage	IC = −500 mA; VCE = −1 V	[2]	-	-	−1.2	V
Cc		collector capacitance	IE = ie = 0 A; VCB = −10 V;		-	5	-	pF
			f = 1 MHz
fT		transition frequency	IC = −10 mA; VCE = −5 V;		80	-	-	MHz
			f = 100 MHz

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2]VBE decreases by approximately 2 mV/K with increasing temperature.

BC807_BC807W_BC327_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

5 of 19

NXP Semiconductors	BC807; BC807W; BC327
	45 V, 500 mA PNP general-purpose transistors

300				006aaa119
hFE	(1)
200
	(2)
100
	(3)
0	−1	−10	−102	−103
−10−1
				IC (mA)

VCE = −1 V

(1)Tamb = 150 °C

(2)Tamb = 25 °C

(3)Tamb = −55 °C

Fig 1. Selection -16: DC current gain as a function of collector current; typical values

600				006aaa120
hFE
	(1)
400
	(2)
200
	(3)
0	−1	−10	−102	−103
−10−1
				IC (mA)

VCE = −1 V

(1)Tamb = 150 °C

(2)Tamb = 25 °C

(3)Tamb = −55 °C

Fig 2. Selection -25: DC current gain as a function of collector current; typical values

800				006aaa121
hFE
600		(1)
400
		(2)
200		(3)
0	−1	−10	−102	−103
−10−1
				IC (mA)

VCE = −1 V

(1)Tamb = 150 °C

(2)Tamb = 25 °C

(3)Tamb = −55 °C

Fig 3. Selection -40: DC current gain as a function of collector current; typical values

BC807_BC807W_BC327_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

6 of 19