NXP PDTC115EE, PDTC115EEF, PDTC115EK, PDTC115EM, PDTC115ES Schematic [ru]

DISCRETE SEMICONDUCTORS

DATA SHEET

PDTC115E series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

Product data sheet	2004 Aug 06
Supersedes data of 2004 Apr 06

NXP Semiconductors	Product data sheet

NPN resistor-equipped transistors;

Ω Ω PDTC115E series

R1 = 100 k , R2 = 100 k

FEATURES

•Built-in bias resistors

•Simplified circuit design

•Reduction of component count

•Reduced pick and place costs.

APPLICATIONS

•General purpose switching and amplification

•Inverter and interface circuits

•Circuit driver.

PRODUCT OVERVIEW

QUICK REFERENCE DATA

SYMBOL	PARAMETER	TYP.	MAX.	UNIT
VCEO	collector-emitter	−	50	V
	voltage
IO	output current (DC)	−	20	mA
R1	bias resistor	100	−	kΩ
R2	bias resistor	100	−	kΩ

DESCRIPTION

NPN resistor equipped transistor (see “Simplified outline, symbol and pinning” for package details).

TYPE NUMBER	PACKAGE			MARKING CODE	PNP COMPLEMENT
	PHILIPS		EIAJ
PDTC115EE	SOT416		SC-75	46	PDTA115EE
PDTC115EEF	SOT490		SC-89	49	PDTA115EEF
PDTC115EK	SOT346		SC-59	56	PDTA115EK
PDTC115EM	SOT883		SC-101	DV	PDTA115EM
PDTC115ES	SOT54 (TO-92)		SC-43	TC115E	PDTA115ES
PDTC115ET	SOT23		−	*44(1)	PDTA115ET
PDTC115EU	SOT323		SC-70	*15(1)	PDTA115EU

Note

1.* = p: Made in Hong Kong.

*= t: Made in Malaysia.

*= W: Made in China.

2004 Aug 06

2

NXP Semiconductors	Product data sheet

NPN resistor-equipped transistors;

Ω Ω PDTC115E series R1 = 100 k , R2 = 100 k

SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER	SIMPLIFIED OUTLINE AND SYMBOL				PINNING
				PIN	DESCRIPTION
PDTC115ES				1	base
	handbook, halfpage			2	collector
			2	3	emitter
	1	R1
	2	1
	3	R2
			3
		MAM364

PDTC115EE				1	base
PDTC115EEF		3	3	2	emitter
PDTC115EK	handbook, halfpage			3	collector
PDTC115ET			R1
			1
PDTC115EU			R2
	1	2	2
	Top view		MDB269

PDTC115EM		1	base
		2	emitter
handbook, halfpage	3	3	collector
2	R1
	1
	3
1	R2
	2
bottom view
	MHC506

2004 Aug 06

3

NXP Semiconductors	Product data sheet

NPN resistor-equipped transistors;

Ω Ω PDTC115E series R1 = 100 k , R2 = 100 k

ORDERING INFORMATION

	TYPE NUMBER		PACKAGE
		NAME	DESCRIPTION	VERSION
	PDTC115EE	−	plastic surface mounted package; 3 leads	SOT416
	PDTC115EEF	−	plastic surface mounted package; 3 leads	SOT490
	PDTC115EK	−	plastic surface mounted package; 3 leads	SOT346
	PDTC115EM	−	leadless ultra small plastic package; 3 solder lands; body	SOT883
			1.0 × 0.6 × 0.5 mm
	PDTC115ES	−	plastic single-ended leaded (through hole) package; 3 leads	SOT54
	PDTC115ET	−	plastic surface mounted package; 3 leads	SOT23
	PDTC115EU	−	plastic surface mounted package; 3 leads	SOT323

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	50	V
VCEO	collector-emitter voltage	open base	−	50	V
VEBO	emitter-base voltage	open collector	−	10	V
VI	input voltage
	positive		−	+40	V
	negative		−	−10	V
IO	output current (DC)		−	20	mA
ICM	peak collector current		−	100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C
	SOT54	note 1	−	500	mW
	SOT23	note 1	−	250	mW
	SOT346	note 1	−	250	mW
	SOT323	note 1	−	200	mW
	SOT416	note 1	−	150	mW
	SOT883	notes 2 and 3	−	250	mW
	SOT490	notes 1 and 2	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient		−65	+150	°C
	temperature
Notes

1.Refer to standard mounting conditions.

2.Reflow soldering is the only recommended soldering method.

3.Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

2004 Aug 06

4

NXP Semiconductors	Product data sheet

NPN resistor-equipped transistors;

Ω Ω PDTC115E series R1 = 100 k , R2 = 100 k

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth(j-a)	thermal resistance from junction to ambient	in free air
	SOT54	note 1	250	K/W
	SOT23	note 1	500	K/W
	SOT346	note 1	500	K/W
	SOT323	note 1	625	K/W
	SOT416	note 1	833	K/W
	SOT833	notes 2 and 3	500	K/W
	SOT490	notes 1 and 2	500	K/W

Notes

1.Refer to standard mounting conditions.

2.Reflow soldering is the only recommended soldering method.

3.Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector-base cut-off current	VCB = 50 V; IE = 0 A	−	−	100	nA
ICEO	collector-emitter cut-off current	VCE = 30 V; IB = 0 A	−	−	1	μA
		VCE = 30 V; IB = 0 A; Tj = 150 °C	−	−	50	μA
IEBO	emitter-base cut-off current	VEB = 5 V; IC = 0 A	−	−	50	μA
hFE	DC current gain	VCE = 5 V; IC = 5 mA	80	−	−
VCEsat	collector-emitter saturation voltage	IC = 5 mA; IB = 0.25 mA	−	−	150	mV
Vi(off)	input-off voltage	IC = 100 μA; VCE = 5 V	−	1.1	0.5	V
Vi(on)	input-on voltage	IC = 1 mA; VCE = 0.3 V	3	1.5	−	V
R1	input resistor		70	100	130	kΩ
R2	resistor ratio		0.8	1	1.2
-------
R1
Cc	collector capacitance	IE = ie = 0 A; VCB = 10 V;	−	−	2.5	pF
		f = 1 MHz

2004 Aug 06

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