NXP BC856AW, BC856BW, BC856W, BC857AW, BC857BW Schematic [ru]

DISCRETE SEMICONDUCTORS

DATA SHEET

ook, halfpage

M3D102

BC856W; BC857W; BC858W

PNP general purpose transistors

Product data sheet	2002 Feb 04
Supersedes data of 1999 Apr 12

	NXP Semiconductors	Product data sheet
	PNP general purpose transistors	BC856W; BC857W;
		BC858W

FEATURES

•Low current (max. 100 mA)

•Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT323 plastic package.

NPN complements: BC846W, BC847W and BC848W.

MARKING

TYPE NUMBER	MARKING CODE(1)
BC856W	3D*
BC856AW	3A*
BC856BW	3B*
BC857W	3H*
BC857AW	3E*
BC857BW	3F*
BC857CW	3G*
BC858W	3M*

Note

1.* = -: made in Hong Kong.

*= t: made in Malaysia.

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage		3

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2

		1		2
Top view				MAM048

Fig.1 Simplified outline (SOT323; SC70) and symbol.

2002 Feb 04

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NXP Semiconductors				Product data sheet
PNP general purpose transistors		BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC856W		−	−80	V
	BC857W		−	−50	V
	BC858W		−	−30	V
VCEO	collector-emitter voltage	open base
	BC856W		−	−65	V
	BC857W		−	−45	V
	BC858W		−	−30	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−100	mA
ICM	peak collector current		−	−200	mA
IBM	peak base current		−	−200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	200	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Refer to SOT323 standard mounting conditions.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to	in free air; note 1	625	K/W
	ambient
Note

1. Refer to SOT323 standard mounting conditions.

2002 Feb 04

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NXP Semiconductors				Product data sheet
PNP general purpose transistors		BC856W; BC857W; BC858W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector-base cut-off current	VCB = −30 V; IE = 0	−	−1	−15	nA
		VCB = −30 V; IE = 0;	−	−	−4	μA
		Tj = 150 °C
IEBO	emitter-base cut-off current	VEB = −5 V; IC = 0	−	−	−100	nA
hFE	DC current gain	IC = −2 mA; VCE = −5 V
	BC856W		125	−	475
	BC857W; BC858W		125	−	800
	BC856AW; BC857AW		125	−	250
	BC856BW; BC857BW		220	−	475
	BC857CW		420	−	800
VCEsat	collector-emitter saturation voltage	IC = −10 mA; IB = −0.5 mA	−	−75	−300	mV
		IC = −100 mA; IB = −5 mA;	−	−250	−600	mV
		note 1
VBEsat	base-emitter saturation voltage	IC = −10 mA; IB = −0.5 mA	−	−700	−	mV
		IC = −100 mA; IB = −5 mA;	−	−850	−	mV
		note 1
VBE	base-emitter voltage	IC = −2 mA; VCE = −5 V	−600	−650	−750	mV
		IC = −10 mA; VCE = −5 V	−	−	−820	mV
Cc	collector capacitance	VCB = −10 V; IE = Ie = 0;	−	−	3	pF
		f = 1 MHz
Ce	emitter capacitance	VEB = −0.5 V; IC = Ic = 0;	−	−	12	pF
		f = 1 MHz
fT	transition frequency	VCE = −5 V; IC = −10 mA;	100	−	−	MHz
		f = 100 MHz
F	noise figure	IC = −200 μA; VCE = −5 V;	−	−	10	dB
		RS = 2 kΩ; f = 1 kHz;
		B = 200 Hz
Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2002 Feb 04

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