NXP BZT52H-B10, BZT52H-B11, BZT52H-B12, BZT52H-B13, BZT52H-B15 Schematic [ru]

BZT52H series

Single Zener diodes in a SOD123F package

Rev. 3 — 7 December 2010

Product data sheet

1.Product profile

1.1General description

General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits
Total power dissipation: ≤ 830 mW	Low differential resistance
Wide working voltage range: nominal	AEC-Q101 qualified
2.4 V to 75 V (E24 range)
Small plastic package suitable for
surface-mounted design

1.3 Applications

General regulation functions

1.4 Quick reference data

Table 1.	Quick reference data
Symbol	Parameter	Conditions		Min	Typ	Max	Unit
VF	forward voltage	IF = 10 mA	[1]	-	-	0.9	V
Ptot	total power dissipation	Tamb ≤ 25 °C	[2]	-	-	375	mW
			[3]	-	-	830	mW

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[3]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

2.Pinning information

Table 2.	Pinning
Pin	Description		Simplified outline			Graphic symbol
1	cathode	[1]
2	anode	1			2	1					2
								006aaa152

[1]The marking bar indicates the cathode.

NXP Semiconductors	BZT52H series
	Single Zener diodes in a SOD123F package

3. Ordering information

Table 3. Ordering information

Type number	Package
	Name	Description	Version
BZT52H-B2V4 to	-	plastic surface-mounted package; 2 leads	SOD123F
BZT52H-C75[1]

[1]The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

4. Marking

Table 4. Marking codes

Type number	Marking	Type number	Marking	Type number	Marking	Type number	Marking
	code		code		code		code
BZT52H-B2V4	DC	BZT52H-B15	DX	BZT52H-C2V4	B3	BZT52H-C15	BN
BZT52H-B2V7	DD	BZT52H-B16	DY	BZT52H-C2V7	B4	BZT52H-C16	BP
BZT52H-B3V0	DE	BZT52H-B18	DZ	BZT52H-C3V0	B5	BZT52H-C18	BQ
BZT52H-B3V3	DF	BZT52H-B20	E1	BZT52H-C3V3	B6	BZT52H-C20	BR
BZT52H-B3V6	DG	BZT52H-B22	E2	BZT52H-C3V6	B7	BZT52H-C22	BS
BZT52H-B3V9	DH	BZT52H-B24	E3	BZT52H-C3V9	B8	BZT52H-C24	BT
BZT52H-B4V3	DJ	BZT52H-B27	E4	BZT52H-C4V3	B9	BZT52H-C27	BU
BZT52H-B4V7	DK	BZT52H-B30	E5	BZT52H-C4V7	BA	BZT52H-C30	BV
BZT52H-B5V1	DL	BZT52H-B33	E6	BZT52H-C5V1	BB	BZT52H-C33	BW
BZT52H-B5V6	DM	BZT52H-B36	E7	BZT52H-C5V6	BC	BZT52H-C36	BX
BZT52H-B6V2	DN	BZT52H-B39	E8	BZT52H-C6V2	BD	BZT52H-C39	BY
BZT52H-B6V8	DP	BZT52H-B43	E9	BZT52H-C6V8	BE	BZT52H-C43	BZ
BZT52H-B7V5	DQ	BZT52H-B47	EA	BZT52H-C7V5	BF	BZT52H-C47	C1
BZT52H-B8V2	DR	BZT52H-B51	EB	BZT52H-C8V2	BG	BZT52H-C51	C2
BZT52H-B9V1	DS	BZT52H-B56	EC	BZT52H-C9V1	BH	BZT52H-C56	C3
BZT52H-B10	DT	BZT52H-B62	ED	BZT52H-C10	BJ	BZT52H-C62	C4
BZT52H-B11	DU	BZT52H-B68	EE	BZT52H-C11	BK	BZT52H-C68	C5
BZT52H-B12	DV	BZT52H-B75	EF	BZT52H-C12	BL	BZT52H-C75	C6
BZT52H-B13	DW	-	-	BZT52H-C13	BM	-	-

BZT52H_SER

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 7 December 2010

2 of 13

NXP Semiconductors	BZT52H series
	Single Zener diodes in a SOD123F package

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
IF	forward current			-	250	mA
IZSM	non-repetitive peak			-	see
	reverse current				Table 8, 9
					and 10
PZSM	non-repetitive peak		[1]	-	40	W
	reverse power dissipation	Tamb ≤ 25 °C
Ptot	total power dissipation		[2]	-	375	mW
			[3]	-	830	mW
Tj	junction temperature			-	150	°C
Tamb	ambient temperature			−65	+150	°C
Tstg	storage temperature			−65	+150	°C

[1]tp = 100 μs; square wave; Tj = 25 °C prior to surge.

[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6.Thermal characteristics

Table 6.	Thermal characteristics
Symbol	Parameter	Conditions		Min	Typ	Max	Unit
R	thermal resistance from	in free air	[1]	-	-	330	K/W
th(j-a)	junction to ambient
			[2]	-	-	150	K/W
R	thermal resistance from		[3]	-	-	70	K/W
th(j-sp)

junction to solder point

[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3]Soldering point of cathode tab.

BZT52H_SER

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 7 December 2010

3 of 13

NXP Semiconductors					BZT52H series
					Single Zener diodes in a SOD123F package
7. Characteristics
	Table 7.		Characteristics
	Tj = 25	°C unless otherwise specified.
	Symbol		Parameter	Conditions	Min	Typ	Max	Unit
	VF		forward voltage	IF = 10 mA	[1] -	-	0.9	V

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

Table 8.		Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Tj = 25	°C unless otherwise specified.
BZT52H		Sel	Working				Maximum differential			Reverse			Temperature						Diode				Non-repetitive
-xxx			voltage				resistance rdif (Ω)			current IR (μA)			coefficient						capacitance				peak reverse
			V	Z	(V);								S		Z		(mV/K);		C	d	(pF)[1]		current
			I	= 5 mA									I	Z		= 5 mA							I	ZSM	(A)[2]
			Z
			Min			Max	IZ = 1 mA		IZ = 5 mA	Max		VR (V)	Min					Max	Max				Max
													−3.5
2V4		B	2.35			2.45	400	85		50		1						0.0	450			6.0
		C	2.2			2.6							−3.5
2V7		B	2.65			2.75	500	83		20		1						0.0	450			6.0
		C	2.5			2.9							−3.5
3V0		B	2.94			3.06	500	95		10		1						0.0	450			6.0
		C	2.8			3.2							−3.5
3V3		B	3.23			3.37	500	95		5		1						0.0	450			6.0
		C	3.1			3.5							−3.5
3V6		B	3.53			3.67	500	95		5		1						0.0	450			6.0
		C	3.4			3.8							−3.5
3V9		B	3.82			3.98	500	95		3		1						0.0	450			6.0
		C	3.7			4.1							−3.5
4V3		B	4.21			4.39	500	95		3		1						0.0	450			6.0
		C	4.0			4.6							−3.5
4V7		B	4.61			4.79	500	78		3		2						0.2	300			6.0
		C	4.4			5.0							−2.7
5V1		B	5.0			5.2	480	60		2		2						1.2	300			6.0
		C	4.8			5.4							−2.0
5V6		B	5.49			5.71	400	40		1		2						2.5	300			6.0
		C	5.2			6.0
6V2		B	6.08			6.32	150	10		3		4	0.4					3.7	200			6.0
		C	5.8			6.6
6V8		B	6.66			6.94	80	8		2		4	1.2					4.5	200			6.0
		C	6.4			7.2
7V5		B	7.35			7.65	80	10		1		5	2.5					5.3	150			4.0
		C	7.0			7.9
8V2		B	8.04			8.36	80	10		0.7		5	3.2					6.2	150			4.0
		C	7.7			8.7
BZT52H_SER								All information provided in this document is subject to legal disclaimers.														© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 7 December 2010

4 of 13

NXP Semiconductors																			BZT52H series
												Single Zener diodes in a SOD123F package
Table 8.		Characteristics per type; BZT52H-B2V4 to BZT52H-C24 …continued
Tj = 25	°C unless otherwise specified.
BZT52H		Sel	Working				Maximum differential		Reverse				Temperature							Diode			Non-repetitive
-xxx			voltage				resistance rdif (Ω)		current IR (μA)				coefficient							capacitance			peak reverse
			V	Z	(V);								S		Z		(mV/K);			C	d	(pF)[1]	current
			I	= 5 mA									I	Z		= 5 mA							I	ZSM	(A)[2]
			Z
			Min			Max	IZ = 1 mA	IZ = 5 mA	Max		VR (V)		Min					Max		Max			Max
9V1		B	8.92			9.28	100	10	0.5		6	3.8						7.0	150				3.0
		C	8.5			9.6
10		B	9.8			10.2	70	10	0.2		7	4.5						8.0	90				3.0
		C	9.4			10.6
11		B	10.8			11.2	70	10	0.1		8	5.4						9.0	85				2.5
		C	10.4			11.6
12		B	11.8			12.2	90	10	0.1		8	6.0						10.0	85				2.5
		C	11.4			12.7
13		B	12.7			13.3	110	10	0.1		8	7.0						11.0	80				2.5
		C	12.4			14.1
15		B	14.7			15.3	110	15	0.05		10.5	9.2						13.0	75				2.0
		C	13.8			15.6
16		B	15.7			16.3	170	20	0.05		11.2	10.4						14.0	75				1.5
		C	15.3			17.1
18		B	17.6			18.4	170	20	0.05		12.6	12.4						16.0	70				1.5
		C	16.8			19.1
20		B	19.6			20.4	220	20	0.05		14	14.4						18.0	60				1.5
		C	18.8			21.2
22		B	21.6			22.4	220	25	0.05		15.4	16.4						20.0	60				1.25
		C	20.8			23.3
24		B	23.5			24.5	220	30	0.05		16.8	18.4						22.0	55				1.25

C22.8 25.6

[1]f = 1 MHz; VR = 0 V.

[2]tp = 100 μs; Tamb = 25 °C.

BZT52H_SER

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 7 December 2010

5 of 13