NXP BC546A, BC546B, BC846A, BC846AT, BC846AW Schematic [ru]

BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

Rev. 07 — 17 November 2009

Product data sheet

1.Product profile

1.1General description

NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

Table 1. Product overview

Type number[1]	Package			PNP
	NXP	JEITA	JEDEC	complement
BC846	SOT23	-	TO-236AB	BC856
BC846W	SOT323	SC-70	-	BC856W
BC846T	SOT416	SC-75	-	BC856T
BC546A[2]	SOT54	SC-43A	TO-92	BC556A
BC546B[2]	SOT54	SC-43A	TO-92	BC556B

[1]Valid for all available selection groups.

[2]Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2Features

General-purpose transistors

SMD plastic packages

Two different gain selections

1.3Applications

General-purpose switching and amplification

1.4Quick reference data

Table 2.	Quick reference data
Symbol		Parameter	Conditions	Min	Typ	Max	Unit
VCEO		collector-emitter voltage	open base	-	-	65	V
IC		collector current		-	-	100	mA
hFE		DC current gain	VCE = 5 V;	110	-	450
			IC = 2 mA
		hFE group A		110	180	220
		hFE group B		200	290	450

NXP Semiconductors	BC846/BC546 series
	65 V, 100 mA NPN general-purpose transistors

2. Pinning information

Table 3.	Pinning
Pin	Description	Simplified outline		Symbol
SOT23; SOT323; SOT416
1	base			3
2	emitter		3
3	collector			1
		1	2	2
			006aaa144	sym021
SOT54
1	emitter			3
2	base
3	collector		1	2
			2
			3	1
			001aab347
				sym026
SOT54A
1	emitter			3
2	base
3	collector		1	2
			2
			3	1
			001aab348
				sym026
SOT54 variant
1	emitter			3
2	base
3	collector		1	2
			2
			3	1
			001aab447
				sym026

BC846_BC546_SER_7

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 07 — 17 November 2009

2 of 14

NXP Semiconductors	BC846/BC546 series
	65 V, 100 mA NPN general-purpose transistors

3. Ordering information

Table 4. Ordering information

Type number[1]	Package
	Name	Description	Version
BC846	-	plastic surface mounted package; 3 leads	SOT23
BC846W	SC-70	plastic surface mounted package; 3 leads	SOT323
BC846T	SC-75	plastic surface mounted package; 3 leads	SOT416
BC546A[2]	SC-43A	plastic single-ended leaded (through hole) package;	SOT54
		3 leads
BC546B[2]	SC-43A	plastic single-ended leaded (through hole) package;	SOT54
		3 leads

[1]Valid for all available selection groups.

[2]Also available in SOT54 and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

Table 5. Marking codes

Type number	Marking code[1]	Type number	Marking code[1]
BC846	1D*	BC846T	1M
BC846A	1A*	BC846AT	1A
BC846B	1B*	BC846BT	1B
BC846W	1D*	BC546A	C546A
BC846AW	1A*	BC546B	C546B
BC846BW	1B*	-	-

[1]* = -: made in Hong Kong

*= p: made in Hong Kong

*= t: made in Malaysia

*= W: made in China

BC846_BC546_SER_7

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 07 — 17 November 2009

3 of 14

NXP Semiconductors				BC846/BC546 series
				65 V, 100 mA NPN general-purpose transistors
5. Limiting values
	Table 6.	Limiting values
	In accordance with the Absolute Maximum Rating System (IEC 60134).
	Symbol		Parameter	Conditions	Min	Max	Unit
	VCBO		collector-base voltage	open emitter	-	80	V
	VCEO		collector-emitter voltage	open base	-	65	V
	VEBO		emitter-base voltage	open collector	-	6	V
	IC		collector current		-	100	mA
	ICM		peak collector current	single pulse;	-	200	mA
				tp ≤ 1 ms
	IBM		peak base current	single pulse;	-	200	mA
				tp ≤ 1 ms
	Ptot		total power dissipation	Tamb ≤ 25 °C	[1]
			SOT23		-	250	mW
			SOT323		-	200	mW
			SOT416		-	150	mW
			SOT54		-	500	mW
	Tj		junction temperature		-	150	°C
	Tamb		ambient temperature		−65	+150	°C
	Tstg		storage temperature		−65	+150	°C

[1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

6.Thermal characteristics

Table 7.	Thermal characteristics
Symbol		Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-a)		thermal resistance from	in free air	[1]
		junction to ambient
		SOT23		-	-	500	K/W
		SOT323		-	-	625	K/W
		SOT416		-	-	833	K/W
		SOT54		-	-	250	K/W

[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

BC846_BC546_SER_7

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 07 — 17 November 2009

4 of 14

NXP Semiconductors	BC846/BC546 series
	65 V, 100 mA NPN general-purpose transistors

7. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol	Parameter	Conditions		Min	Typ	Max	Unit
ICBO	collector-base cut-off	VCB = 30 V; IE = 0 A		-	-	15	nA
	current
		VCB = 30 V; IE = 0 A;		-	-	5	μA
		Tj = 150 °C
IEBO	emitter-base cut-off	VEB = 5 V; IE = 0 A		-	-	100	nA
	current
hFE	DC current gain
	hFE group A	VCE = 5 V; IC = 10 μA		-	180	-
	hFE group B	VCE = 5 V; IC = 10 μA		-	290	-
	DC current gain	VCE = 5 V; IC = 2 mA		110	-	450
	hFE group A	VCE = 5 V; IC = 2 mA		110	180	220
	hFE group B	VCE = 5 V; IC = 2 mA		200	290	450
VCEsat	collector-emitter	IC = 10 mA; IB = 0.5 mA		-	90	200	mV
	saturation voltage
		IC = 100 mA; IB = 5 mA	[1]	-	200	400	mV
VBEsat	base-emitter	IC = 10 mA; IB = 0.5 mA	[2]	-	760	-	mV
	saturation voltage
		IC = 100 mA; IB = 5 mA	[2]	-	900	-	mV
VBE	base-emitter voltage	IC = 2 mA; VCE = 5 V	[3]	580	660	700	mV
		IC = 10 mA; VCE = 5 V	[3]	-	-	770	mV
fT	transition frequency	VCE = 5 V; IC = 10 mA;		100	-	-	MHz
		f = 100 MHz
Cc	collector capacitance	VCB = 10 V; IE = ie = 0 A;		-	2	3	pF
		f = 1 MHz
Ce	emitter capacitance	VEB = 0.5 V; IC = ic = 0 A;		-	11	-	pF
		f = 1 MHz
NF	noise figure	IC = 200 μA; VCE = 5 V;		-	2	10	dB
		RS = 2 kΩ; f = 1 kHz;

B = 200 Hz

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2]VBEsat decreases by approximately 1.7 mV/K with increasing temperature.

[3]VBE decreases by approximately 2 mV/K with increasing temperature.

BC846_BC546_SER_7

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 07 — 17 November 2009

5 of 14