NXP PDTC143XE, PDTC143XEF, PDTC143XK, PDTC143XM, PDTC143XS Schematic [ru]

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PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

Rev. 10 — 16 November 2009

Product data sheet

1.Product profile

1.1General description

NPN Resistor-Equipped Transistors (RET) family.

Table 1. Product overview

Type number

Package

 

 

PNP complement

 

NXP

JEITA

JEDEC

 

PDTC143XE

SOT416

SC-75

-

PDTA143XE

 

 

 

 

 

PDTC143XEF

SOT490

SC-89

-

PDTA143XEF

 

 

 

 

 

PDTC143XK

SOT346

SC-59A

TO-236

PDTA143XK

 

 

 

 

 

PDTC143XM

SOT883

SC-101

-

PDTA143XM

 

 

 

 

 

PDTC143XS[1]

SOT54

SC-43A

TO-92

PDTA143XS

PDTC143XT

SOT23

-

TO-236AB

PDTA143XT

 

 

 

 

 

PDTC143XU

SOT323

SC-70

-

PDTA143XU

 

 

 

 

 

[1]Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2Features

 

Built-in bias resistors

 

Reduces component count

 

Simplifies circuit design

 

Reduces pick and place costs

100 mA output current capability

1.3Applications

 

Digital applications

 

Cost-saving alternative for BC847 series

 

 

 

in digital applications

 

Controlling IC inputs

 

Switching loads

1.4 Quick reference data

Table 2.

Quick reference data

 

 

 

 

 

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

-

50

V

IO

output current

 

-

-

100

mA

R1

bias resistor 1 (input)

 

3.3

4.7

6.1

 

 

 

 

 

 

 

R2/R1

bias resistor ratio

 

1.7

2.1

2.6

 

 

 

 

 

 

 

 

NXP PDTC143XE, PDTC143XEF, PDTC143XK, PDTC143XM, PDTC143XS Schematic

NXP Semiconductors

PDTC143X series

 

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

2. Pinning information

Table 3.

Pinning

 

Pin

Description

Simplified outline Symbol

SOT54

 

 

1input (base)

2output (collector)

3GND (emitter)

 

2

 

R1

1

1

 

2

R2

3

 

001aab347

3

 

 

006aaa145

SOT54A

1input (base)

2output (collector)

3GND (emitter)

 

2

 

R1

1

1

2

R2

3

 

001aab348

3

 

 

006aaa145

SOT54 variant

1input (base)

2output (collector)

3GND (emitter)

 

2

 

R1

1

1

 

2

R2

3

 

001aab447

3

 

 

006aaa145

SOT23; SOT323; SOT346; SOT416; SOT490

1

input (base)

2

GND (emitter)

3

 

3

 

 

3

output (collector)

 

 

R1

 

 

1

 

 

 

 

R2

 

1

 

2

2

 

 

 

 

 

 

 

006aaa144

sym007

 

 

 

 

SOT883

1

input (base)

2

GND (emitter)

1

 

 

3

 

 

3

3

output (collector)

 

 

R1

2

 

 

 

 

1

 

 

 

Transparent

 

R2

 

 

 

top view

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

sym007

PDTC143X_SER_10

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 10 — 16 November 2009

2 of 12

NXP Semiconductors

PDTC143X series

 

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

3. Ordering information

Table 4. Ordering information

Type number

Package

 

 

 

 

 

 

 

Name

Description

Version

PDTC143XE

SC-75

plastic surface mounted package; 3 leads

SOT416

 

 

 

 

PDTC143XEF

SC-89

plastic surface mounted package; 3 leads

SOT490

 

 

 

 

PDTC143XK

SC-59A

plastic surface mounted package; 3 leads

SOT346

 

 

 

 

PDTC143XM

SC-101

leadless ultra small plastic package; 3 solder lands;

SOT883

 

 

body 1.0 × 0.6 × 0.5 mm

 

 

 

 

 

PDTC143XS[1]

SC-43A

plastic single-ended leaded (through hole) package;

SOT54

 

 

3 leads

 

 

 

 

 

PDTC143XT

-

plastic surface mounted package; 3 leads

SOT23

 

 

 

 

PDTC143XU

SC-70

plastic surface mounted package; 3 leads

SOT323

 

 

 

 

[1]Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

Table 5. Marking codes

Type number

Marking code[1]

PDTC143XE

34

 

 

PDTC143XEF

54

 

 

PDTC143XK

26

 

 

PDTC143XM

E2

 

 

PDTC143XS

TC143X

 

 

PDTC143XT

*32

 

 

PDTC143XU

*53

 

 

[1]* = -: made in Hong Kong

*= p: made in Hong Kong

*= t: made in Malaysia

*= W: made in China

PDTC143X_SER_10

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 10 — 16 November 2009

3 of 12

NXP Semiconductors

PDTC143X series

 

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

 

 

 

 

 

 

VCEO

collector-emitter voltage

open base

-

50

V

 

 

 

 

 

 

VEBO

emitter-base voltage

open collector

-

7

V

 

 

 

 

 

 

VI

input voltage

 

 

 

 

 

positive

 

-

+20

V

 

 

 

 

 

 

 

negative

 

-

−7

V

 

 

 

 

 

 

IO

output current

 

-

100

mA

ICM

peak collector current

single pulse;

-

100

mA

 

 

tp ≤ 1 ms

 

 

 

Ptot

total power dissipation

Tamb ≤ 25 °C

 

 

 

 

SOT416

[1]

-

150

mW

 

 

 

 

 

 

 

SOT490

[1][2]

-

250

mW

 

 

 

 

 

 

 

SOT346

[1]

-

250

mW

 

 

 

 

 

 

 

SOT883

[2][3]

-

250

mW

 

 

 

 

 

 

 

SOT54

[1]

-

500

mW

 

 

 

 

 

 

 

SOT23

[1]

-

250

mW

 

 

 

 

 

 

 

SOT323

[1]

-

200

mW

 

 

 

 

 

 

Tstg

storage temperature

 

−65

+150

°C

Tj

junction temperature

 

-

150

°C

Tamb

ambient temperature

 

−65

+150

°C

[1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2]Reflow soldering is the only recommended soldering method.

[3]Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

PDTC143X_SER_10

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 10 — 16 November 2009

4 of 12

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