NXP BC337, BC337-16, BC337-25, BC337-40, BC817 Schematic [ru]

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

		Rev. 06 — 17 November 2009	Product data sheet

1.Product profile

1.1General description

NPN general-purpose transistors.

Table 1. Product overview

Type number	Package		PNP complement
	NXP	JEITA
BC817	SOT23	-	BC807
BC817W	SOT323	SC-70	BC807W
BC337[1]	SOT54 (TO-92)	SC-43A	BC327

[1]Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2Features

High current

Low voltage

1.3 Applications

General-purpose switching and amplification

1.4 Quick reference data

Table 2.	Quick reference data
Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	collector-emitter voltage	open base;	-	-	45	V
		IC = 10 mA
IC	collector current (DC)		-	-	500	mA
ICM	peak collector current		-	-	1	A
hFE	DC current gain	IC = 100 mA;	[1] -	-	-
		VCE = 1 V
	BC817; BC817W; BC337		100	-	600
	BC817-16; BC817-16W; BC337-16		100	-	250
	BC817-25; BC817-25W; BC337-25		160	-	400
	BC817-40; BC817-40W; BC337-40		250	-	600

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

NXP Semiconductors	BC817; BC817W; BC337
	45 V, 500 mA NPN general-purpose transistors

2. Pinning information

Table 3.	Pinning
Pin	Description	Simplified outline		Symbol
SOT23
1	base
2	emitter		3	3
3	collector			1
		1	2
				2
				sym021
SOT323
1	base
2	emitter		3	3
3	collector			1
				2
				sym021
		1	2
			sot323_so
SOT54
1	emitter
2	base			3
3	collector		1	2
			2
			3	1
			001aab347
				sym026
SOT54A
1	emitter
2	base			3
3	collector		1	2
			2
			3	1
			001aab348
				sym026
SOT54 variant
1	emitter
2	base			3
3	collector		1	2
			2
			3	1
			001aab447
				sym026

BC817_BC817W_BC337_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

2 of 19

NXP Semiconductors	BC817; BC817W; BC337
	45 V, 500 mA NPN general-purpose transistors

3. Ordering information

Table 4. Ordering information

Type number[1]	Package
	Name	Description	Version
BC817	-	plastic surface mounted package; 3 leads	SOT23
BC817W	SC-70	plastic surface mounted package; 3 leads	SOT323
BC337[2]	SC-43A	plastic single-ended leaded (through hole) package;	SOT54
		3 leads

[1]Valid for all available selection groups.

[2]Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

Table 5. Marking codes

Type number	Marking code[1]
BC817	6D*
BC817-16	6A*
BC817-25	6B*
BC817-40	6C*
BC817W	6D*
BC817-16W	6A*
BC817-25W	6B*
BC817-40W	6C*
BC337	C337
BC337-16	C33716
BC337-25	C33725
BC337-40	C33740

[1]* = -: made in Hong Kong

*= p: made in Hong Kong

*= t: made in Malaysia

*= W: made in China

BC817_BC817W_BC337_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

3 of 19

NXP Semiconductors	BC817; BC817W; BC337
	45 V, 500 mA NPN general-purpose transistors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions				Min	Max	Unit
VCBO	collector-base voltage	open emitter				-	50	V
VCEO	collector-emitter voltage	open base;				-	45	V
		IC = 10 mA
VEBO	emitter-base voltage	open collector				-	5	V
IC	collector current (DC)					-	500	mA
ICM	peak collector current					-	1	A
IBM	peak base current					-	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C
	BC817				[1][2]	-	250	mW
	BC817W	Tamb ≤	25	°C	[1][2]	-	200	mW
	BC337	Tamb ≤	25	°C	[1][2]	-	625	mW
Tstg	storage temperature					−65	+150	°C
Tj	junction temperature					-	150	°C
Tamb	ambient temperature					−65	+150	°C

[1]Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]Valid for all available selection groups.

6.Thermal characteristics

Table 7.	Thermal characteristics
Symbol	Parameter	Conditions			Min	Typ	Max	Unit
Rth(j-a)	thermal resistance from
	junction to ambient	Tamb ≤ 25 °C
	BC817			[1][2]	-	-	500	K/W
	BC817W	Tamb ≤ 25	°C	[1][2]	-	-	625	K/W
	BC337	Tamb ≤ 25	°C	[1][2]	-	-	200	K/W

[1]Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]Valid for all available selection groups.

BC817_BC817W_BC337_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

4 of 19

NXP Semiconductors

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

7. Characteristics

Table 8.

Characteristics

Tamb = 25

°C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

IE = 0 A; VCB = 20 V

-

-

100

nA

IE = 0 A; VCB = 20 V;

-

-

5

μA

Tj = 150 °C

IEBO

emitter-base cut-off current

IC = 0 A; VEB = 5 V

-

-

100

nA

hFE

DC current gain

IC = 100 mA; VCE = 1 V

[1]

BC817; BC817W; BC337

100

-

600

BC817-16; BC817-16W;

100

-

250

BC337-16

BC817-25; BC817-25W;

160

-

400

BC337-25

BC817-40; BC817-40W;

250

-

600

BC337-40

h

DC current gain

I

C

= 500 mA; V

CE

= 1 V

[1]

40

-

-

FE

VCEsat

collector-emitter saturation

IC = 500 mA; IB = 50 mA

[1]

-

-

700

mV

voltage

VBE

base-emitter voltage

IC = 500 mA; VCE = 1 V

[2]

-

-

1.2

V

Cc

collector capacitance

IE = ie = 0 A; VCB = 10 V;

-

3

-

pF

f = 1 MHz

fT

transition frequency

IC = 10 mA; VCE = 5 V;

100

-

-

MHz

f = 100 MHz

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2]VBE decreases by approximately 2 mV/K with increasing temperature.

BC817_BC817W_BC337_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

5 of 19

VCE = 1 V

NXP Semiconductors	BC817; BC817W; BC337
	45 V, 500 mA NPN general-purpose transistors

400				006aaa131
hFE
300
		(1)
200
		(2)
100		(3)
0
10−1	1	10	102	103
				IC (mA)

	VCE = 1 V	°C
(1)	Tamb = 150
(2)	Tamb = 25 °C
(3)	Tamb = −55	°C

Fig 1. Selection -16: DC current gain as a function of collector current; typical values

600				006aaa132
hFE
		(1)
400
		(2)
200		(3)
0
10−1	1	10	102	103
				IC (mA)

(1) Tamb = 150° °C

(2) Tamb = 25 C

(3) Tamb = −55 °C

Fig 2. Selection -25: DC current gain as a function of collector current; typical values

800				006aaa133
hFE
600		(1)
400		(2)
		(3)
200
0
10−1	1	10	102	103
				IC (mA)

	VCE = 1 V	°C
(1)	Tamb = 150
(2)	Tamb = 25 °C
(3)	Tamb = −55	°C

Fig 3. Selection -40: DC current gain as a function of collector current; typical values

BC817_BC817W_BC337_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

6 of 19