NXP BAV70, BAV70M, BAV70S, BAV70T, BAV70W Schematic [ru]

BAV70 series

High-speed switching diodes

Rev. 07 — 27 November 2007

Product data sheet

1.Product profile

1.1General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

Table 1. Product overview

Type number	Package			Package	Configuration
	NXP	JEITA	JEDEC	configuration
BAV70	SOT23	-	TO-236AB	small	dual common cathode
BAV70M	SOT883	SC-101	-	leadless ultra	dual common cathode
				small
BAV70S	SOT363	SC-88	-	very small	quadruple common
					cathode/common cathode
BAV70T	SOT416	SC-75	-	ultra small	dual common cathode
BAV70W	SOT323	SC-70	-	very small	dual common cathode

1.2 Features

n	High switching speed: trr ≤ 4 ns	n	Low capacitance: Cd ≤ 1.5 pF
n	Low leakage current	n	Reverse voltage: VR ≤ 100 V

nSmall SMD plastic packages

1.3Applications

nHigh-speed switching

nGeneral-purpose switching

1.4Quick reference data

Table 2.	Quick reference data
Symbol	Parameter	Conditions		Min	Typ	Max	Unit
Per diode
IR	reverse current	VR = 80 V		-	-	0.5	μA
VR	reverse voltage			-	-	100	V
trr	reverse recovery time	[1]		-	-	4	ns

[1]When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

NXP Semiconductors	BAV70 series
	High-speed switching diodes

2. Pinning information

Table 3.	Pinning
Pin	Description	Simplified outline		Symbol
BAV70; BAV70T; BAV70W
1	anode (diode 1)
2	anode (diode 2)		3	3
3	common cathode			1	2
				006aab034
		1	2
			006aaa144

BAV70M

1	anode (diode 1)

		1
2	anode (diode 2)
						3
3	common cathode	2

Transparent

top view

3

1	2
	006aab034

BAV70S

1	anode (diode 1)

2	anode (diode 2)
3	common cathode (diode 3
	and diode 4)
4	anode (diode 3)
5	anode (diode 4)

6common cathode (diode 1 and diode 2)

6 5 4

1 2 3

6	5	4
1	2	3
		006aab104

3. Ordering information

Table 4. Ordering information

Type number	Package
	Name	Description	Version
BAV70	-	plastic surface-mounted package; 3 leads	SOT23
BAV70M	SC-101	leadless ultra small plastic package; 3 solder lands;	SOT883
		body 1.0 × 0.6 × 0.5 mm
BAV70S	SC-88	plastic surface-mounted package; 6 leads	SOT363
BAV70T	SC-75	plastic surface-mounted package; 3 leads	SOT416
BAV70W	SC-70	plastic surface-mounted package; 3 leads	SOT323

BAV70_SER_7

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 07 — 27 November 2007

2 of 15

NXP Semiconductors	BAV70 series
	High-speed switching diodes

4. Marking

Table 5. Marking codes

Type number	Marking code	[1]
BAV70	A4*
BAV70M	S4
BAV70S	A4*
BAV70T	A4
BAV70W	A4*

[1]* = -: made in Hong Kong

*= p: made in Hong Kong

*= t: made in Malaysia

*= W: made in China

5.Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
Per diode
VRRM	repetitive peak reverse		-		100	V
	voltage
VR	reverse voltage		-		100	V
IF	forward current
	BAV70	Tamb ≤ 25 °C	-		215	mA
	BAV70M	Ts = 90 °C	-		150	mA
	BAV70S	Ts = 60 °C	-		250	mA
	BAV70T	Ts = 90 °C	-		150	mA
	BAV70W	Tamb ≤ 25 °C	-		175	mA
IFRM	repetitive peak forward
	current
	BAV70		-		450	mA
	BAV70M		-		500	mA
	BAV70S		-		450	mA
	BAV70T		-		500	mA
	BAV70W		-		500	mA
IFSM	non-repetitive peak forward	square wave	[1]
	current
		tp = 1 μs	-		4	A
		tp = 1 ms	-		1	A
		tp = 1 s	-		0.5	A

BAV70_SER_7

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 07 — 27 November 2007

3 of 15

NXP Semiconductors						BAV70 series
					High-speed switching diodes
	Table 6.	Limiting values …continued
	In accordance with the Absolute Maximum Rating System (IEC 60134).
	Symbol		Parameter	Conditions			Min	Max	Unit
	Ptot		total power dissipation		[2]
			BAV70	Tamb ≤ 25 °C	-			250	mW
			BAV70M	Tamb ≤ 25 °C		[3]	-	250	mW
			BAV70S	Ts = 60 °C	-			350	mW
			BAV70T	Ts = 90 °C	-			170	mW
			BAV70W	Tamb ≤ 25 °C	-			200	mW
	Per device
	IF		forward current
			BAV70	Tamb ≤ 25 °C	-			125	mA
			BAV70M	Ts = 90 °C	-			75	mA
			BAV70S	Ts = 60 °C	-			100	mA
			BAV70T	Ts = 90 °C	-			75	mA
			BAV70W	Tamb ≤ 25 °C	-			100	mA
	Tj		junction temperature		-			150	°C
	Tamb		ambient temperature				−65	+150	°C
	Tstg		storage temperature				−65	+150	°C

[1]Tj = 25 °C prior to surge.

[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[3]Reflow soldering is the only recommended soldering method.

6.Thermal characteristics

Table 7.	Thermal characteristics
Symbol		Parameter	Conditions		Min	Typ	Max	Unit
Per diode
Rth(j-a)		thermal resistance from	in free air	[1]
		junction to ambient
		BAV70			-	-	500	K/W
		BAV70M		[2]	-	-	500	K/W
		BAV70W			-	-	625	K/W
Rth(j-t)		thermal resistance from
		junction to tie-point
		BAV70			-	-	360	K/W
		BAV70W			-	-	300	K/W
Rth(j-sp)		thermal resistance from
		junction to solder point
		BAV70S			-	-	255	K/W
		BAV70T			-	-	350	K/W

[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]Reflow soldering is the only recommended soldering method.

BAV70_SER_7

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 07 — 27 November 2007

4 of 15

NXP Semiconductors	BAV70 series
	High-speed switching diodes

7. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol	Parameter	Conditions			Min	Typ	Max	Unit
Per diode
VF	forward voltage			[1]
		IF = 1 mA			-	-	715	mV
		IF = 10 mA			-	-	855	mV
		IF = 50 mA			-	-	1	V
		IF = 150 mA			-	-	1.25	V
IR	reverse current	VR = 25	V		-	-	30	nA
		VR = 80	V		-	-	0.5	μA
		VR = 25	V; Tj = 150 °C		-	-	30	μA
		VR = 80	V; Tj = 150 °C		-	-	100	μA
Cd	diode capacitance	VR = 0 V; f = 1 MHz			-	-	1.5	pF
trr	reverse recovery time			[2]	-	-	4	ns
VFR	forward recovery voltage			[3]	-	-	1.75	V

[1]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2]When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

[3]When switched from IF = 10 mA; tr = 20 ns.

BAV70_SER_7

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 07 — 27 November 2007

5 of 15