MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by D44H/D
Complementary Silicon Power
Transistors
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
• Low Collector±Emitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A
•Fast Switching Speeds
•Complementary Pairs Simplifies Designs
NPN
D44H Series*
PNP
D45H Series*
*Motorola Preferred Device
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
MAXIMUM RATINGS
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D44H or D45H |
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Rating |
Symbol |
8 |
10, 11 |
Unit |
Collector±Emitter Voltage |
VCEO |
60 |
80 |
Vdc |
Emitter Base Voltage |
VEB |
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5.0 |
Vdc |
Collector Current Ð Continuous |
IC |
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10 |
Adc |
Ð Peak (1) |
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20 |
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Total Power Dissipation |
PD |
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50 |
Watts |
@ TC = 25_C |
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@ TA = 25_C |
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1.67 |
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Operating and Storage Junction |
TJ, Tstg |
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± 55 to 150 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
CASE 221A±06
TO±220AB
Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RqJC |
2.5 |
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_C/W |
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Thermal Resistance, Junction to Ambient |
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RqJA |
75 |
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_C/W |
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Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds |
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TL |
275 |
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_C |
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(1) Pulse Width v 6.0 ms, Duty Cycle v 50%. |
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ELECTRICAL CHARACTERISTICS (TJ = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
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Min |
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Max |
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Unit |
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DC Current Gain |
D44H10 |
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hFE |
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35 |
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Ð |
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Ð |
(VCE = 1.0 Vdc, IC = 2.0 Adc) |
D45H10 |
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D44H8,11 |
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60 |
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Ð |
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D44H8,11 |
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(VCE = 1.0 Vdc, IC = 4.0 Adc) |
D44H10 |
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20 |
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Ð |
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D45H10 |
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D44H8,11 |
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40 |
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Ð |
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D45H8,11 |
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Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
D44H Series D45H Series
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector Cutoff Current |
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ICES |
Ð |
Ð |
10 |
μA |
(VCE = Rated VCEO, VBE = 0) |
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Emitter Cutoff Current |
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IEBO |
Ð |
Ð |
100 |
μA |
(VEB = 5.0 Vdc) |
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ON CHARACTERISTICS |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 8.0 Adc, IB = 0.4 Adc) |
D44H/D45H8,11 |
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Ð |
Ð |
1.0 |
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(IC = 8.0 Adc, IB = 0.8 Adc) |
D44H/D45H10 |
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Ð |
Ð |
1.0 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
Ð |
Ð |
1.5 |
Vdc |
(IC = 8.0 Adc, IB = 0.8 Adc) |
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DYNAMIC CHARACTERISTICS |
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Collector Capacitance |
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Ccb |
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pF |
(VCB = 10 Vdc, ftest = 1.0 MHz) |
D44H Series |
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Ð |
130 |
Ð |
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D45H Series |
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Ð |
230 |
Ð |
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Gain Bandwidth Product |
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fT |
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MHz |
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) |
D44H Series |
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Ð |
50 |
Ð |
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D45H Series |
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Ð |
40 |
Ð |
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SWITCHING TIMES |
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Delay and Rise Times |
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td + tr |
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ns |
(IC = 5.0 Adc, IB1 = 0.5 Adc) |
D44H Series |
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Ð |
300 |
Ð |
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D45H Series |
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Ð |
135 |
Ð |
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Storage Time |
|
ts |
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ns |
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) |
D44H Series |
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Ð |
500 |
Ð |
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D45H Series |
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Ð |
500 |
Ð |
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Fall Time |
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tf |
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ns |
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) |
D44H Series |
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Ð |
140 |
Ð |
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D45H Series |
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Ð |
100 |
Ð |
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100 |
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(AMPS) |
50 |
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30 |
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1.0 ms |
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20 |
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100 μs |
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CURRENT |
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10 |
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10 μs |
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5.0 |
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3.0 |
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COLLECTOR |
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2.0 |
TC ≤ 70° C |
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dc |
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1.0 |
μs |
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1.0 |
DUTY CYCLE ≤ 50% |
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0.5 |
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, |
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C |
0.3 |
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D44H/45H8 |
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I |
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0.2 |
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D44H/45H10,11 |
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0.1 |
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1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 1. Maximum Rated Forward Bias
Safe Operating Area
2 |
Motorola Bipolar Power Transistor Device Data |