ATF-13336-TR1
Table of contents
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5-36
2 – 16 GHz Low Noise
Gallium Arsenide FET
Technical Data
36 micro-X Package
Features
• Low Noise Figure:
1.4␣ dB Typical at 12␣ GHz
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dBm Typical P
1 dB
at
12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
[1]
Electrical Specifications, T
A
= 25° C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA f = 8.0 GHz dB 1.2
f = 12.0 GHz dB 1.4 1.6
f = 14.0 GHz 1.6
G
A
Gain @ NF
O
: V
DS
= 2.5 V, I
DS
= 20 mA f = 8.0 GHz dB 11.5
f = 12.0 GHz dB 8.0 9.0
f = 14.0 GHz dB 7.5
P
1 dB
Power Output @ 1 dB Gain Compression: f = 12.0 GHz d Bm 17.5
V
DS
= 4 V, I
DS
= 40 mA
G
1 dB
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 40 mA f = 12.0 GHz dB 8.5
g
m
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V mmho 25 55
I
DSS
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V mA 40 50 90
V
P
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 1 mA V -4.0 -1.5 -0.5
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
ATF-13336
Description
The ATF-13336 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective micro-
strip package. Its premium noise
figure makes this device appropri-
ate for use in low noise amplifiers
operating in the 2-16␣ GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8724E
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