HP AT-32033-TR1, AT-32033-BLK, AT-32011-TR1, AT-32011-BLK Datasheet

Low Current, High Performance

NPN Silicon Bipolar Transistor

Technical Data

AT-32011

AT-32033

Features

•High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation

•900 MHz Performance:

AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA

•Characterized for End-Of- Life Battery Use (2.7 V)

•SOT-23 and SOT-143 SMT Plastic Packages

•Tape-And-Reel Packaging Option Available[1]

Outline Drawing

EMITTER COLLECTOR

320

BASE EMITTER

SOT-143 (AT-32011)

COLLECTOR

320

BASE EMITTER

SOT-23 (AT-32033)

Description

Hewlett Packard’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the

3 lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The

20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents.

Note:

1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”

Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett Packard’s

10 GHz tf, 30 GHz fMAX Self- Aligned-Transistor (SAT) process.

The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.

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AT-32011, AT-32033 Absolute Maximum Ratings

			Absolute
Symbol	Parameter	Units	Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	11
VCEO	Collector-Emitter Voltage	V	5.5
IC	Collector Current	mA	32
PT	Power Dissipation[2, 3]	mW	200
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65to150

Thermal Resistance[2]:

θjc = 550 °C/W

Notes:

1.Operation of this device above any one of these parameters may cause permanent damage.

2.TMounting Surface = 25°C.

3.Derate at 1.82 mW/°C for TC > 40°C.

Electrical Specifications, TA = 25°C

AT-32011

AT-32033

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Min.

Typ.

Max.

NF

Noise Figure

V

= 2.7 V, I = 2 mA

f = 0.9 GHz

dB

1.0[1]

1.3[1]

1.0[2]

1.3[2]

CE

C

GA

Associated Gain

V

= 2.7 V, I

C

= 2 mA

f = 0.9 GHz

dB

12.5[1]

14[1]

11[2]

12.5[2]

CE

hFE

Forward Current Transfer Ratio

VCE = 2.7 V,IC = 2 mA

–

70

300

70

300

ICBO

Collector Cutoff Current

μA

VCB = 3 V

0.2

0.2

IEBO

Emitter Cutoff Current

μA

VEB = 1 V

1.5

1.5

Notes:

1.Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB.

2.Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB.

1000 pF

VBB

W = 10 L = 1870

W = 30

L = 60

RF IN W = 10

CKT A: L = 380

CKT B: L = 380

TEST CIRCUIT

BOARD MATL = 0.062" FR-4 (ε = 4.8)

DIMENSIONS IN MILS

VCC		1000 pF
W = 10 L = 1870	CKT A: 25 Ω
W = 30	CKT B: 5 Ω
L = 60

RF OUT

W = 10

CKT A: L = 105

CKT B: L = 850

CKT A: W = 30 L = 50 x 2 CKT B: W = 30 L = 60

NOT TO SCALE

Figure 1. Test Circuit for Noise Figure and Associated Gain.

This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match.

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Characterization Information, TA = 25°C

					AT-32011	AT-32033
	Symbol	Parameters and Test Conditions		Units	Typ.	Typ.
	P1dB	Power at 1 dB Gain Compression (opt tuning)
		VCE = 2.7 V, IC = 20 mA	f = 0.9 GHz	dBm	13	13
	G1dB	Gain at 1 dB Gain Compression (opt tuning)
		VCE = 2.7 V, IC = 20 mA	f = 0.9 GHz	dB	16.5	15
	IP3	Output Third Order Intercept Point (opt tuning)
		VCE = 2.7 V, IC = 20 mA	f=0.9GHz	dBm	24	24
	|S | 2	Gain in 50 Ω System
	21 E	VCE = 2.7 V, IC = 2 mA	f=0.9GHz	dB	13	11.5

	2
(dB)	1.5
FIGURE	1				1 mA
NOISE	0.5				2 mA
					10 mA
					5 mA
					20 mA
	0	0.5	1	1.5	2	2.5
	0

FREQUENCY (GHz)

Figure 2. AT-32011 and AT-32033 Minimum Noise Figure vs. Frequency and Current at VCE = 2.7 V.

	25															20
	20															15
(dB)	15														(dB)
																10
Ga															Ga
	10
					1 mA															1 mA
					2 mA											5				2 mA
	5				5 mA															5 mA
					10 mA															10 mA
					20 mA															20 mA
	0															0
	0		0.5				1.0		1.5		2.0		2.5			0		0.5				1.0		1.5		2.0		2.5
						FREQUENCY (GHz)															FREQUENCY (GHz)
Figure 3. AT-32011 Associated Gain at															Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency															Optimum Noise Match vs. Frequency
and Current at VCE									= 2.7 V.						and Current at VCE									= 2.7 V.

	20															20
1dBP (dBm)	15															15
	10															1dBG (dB)
	5															10
					2 mA											5				2 mA
	0																			5 mA
					5 mA
																				10 mA
					10 mA
																				20 mA
					20 mA
	-5															0
																		0.5				1.0		1.5		2.0		2.5
	0		0.5				1.0		1.5		2.0		2.5			0
						FREQUENCY (GHz)															FREQUENCY (GHz)
Figure 5. AT-32011 and AT-32033																Figure 6. AT-32011 1 dB Compressed
Power at 1 dB Gain Compression vs.																Gain vs. Frequency and Current at
Frequency and Current at VCE													= 2.7 V.			VCE =2.7 V.

	20
(dB)	15
	10
G 1dB
	5				2 mA
					5 mA
					10 mA
					20 mA
	0
	0		0.5				1.0		1.5		2.0		2.5

FREQUENCY (GHz)

Figure 7. AT-32033 1 dB Compressed Gain vs. Frequency and Current at VCE =2.7 V.

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