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Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-31011
AT-31033
Features
•High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
•900 MHz Performance:
AT-31011:0.9 dB NF,13 dB GA AT-31033:0.9 dB NF,11 dB GA
•Characterized for End-Of- Life Battery Use (2.7 V)
•SOT-143 SMT Plastic Package
•Tape-And-Reel Packaging Option Available[1]
Outline Drawing
EMITTER COLLECTOR
310
BASE EMITTER
SOT-143 (AT-31011)
COLLECTOR
310
BASE EMITTER
SOT-23 (AT-31033)
Note:
1.Refer to “Tape-and-Reel Packaging for Semiconductor Devices”
Description
Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz
battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific- Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.
The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s
10 GHz fT, 30 GHz fmax Self- Aligned-Transistor (SAT) process.
The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.
4-33 |
5965-8919E |
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol |
Parameter |
Units |
Absolute Maximum[1] |
VEBO |
Emitter-Base Voltage |
V |
1.5 |
VCBO |
Collector-Base Voltage |
V |
11 |
VCEO |
Collector-Emitter Voltage |
V |
5.5 |
IC |
Collector Current |
mA |
16 |
PT |
Power Dissipation[2,3] |
mW |
150 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65to150 |
Notes:
1.Operation of this device above any one of these parameters may cause permanent damage.
2.TMounting Surface = 25°C.
3.Derate at 1.82 mW/°C for TC > 67.5°C.
Thermal Resistance[2]:
θjc =550°C/W
Electrical Specifications, TA = 25°C
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AT-31011 |
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AT-31033 |
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Symbol |
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Parameters and Test Conditions |
Units |
Min |
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Typ |
Max |
Min |
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Typ |
Max |
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NF |
Noise Figure |
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0.9[1] |
1.2[1] |
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0.9[2] |
1.2[2] |
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V |
= 2.7 V, I |
C |
= 1 mA |
f=0.9GHz |
dB |
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CE |
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GA |
Associated Gain |
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11[1] |
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13[1] |
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9[2] |
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11[2] |
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V |
= 2.7 V, I = 1 mA |
f=0.9GHz |
dB |
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CE |
C |
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hFE |
Forward Current |
VCE =2.7V |
- |
70 |
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300 |
70 |
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300 |
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Transfer Ratio |
IC = 1 mA |
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ICBO |
Collector Cutoff Current |
VCB = 3 V |
μA |
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0.05 |
0.2 |
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0.05 |
0.2 |
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IEBO |
Emitter Cutoff Current |
VEB = 1 V |
μA |
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0.1 |
1.5 |
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0.1 |
1.5 |
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Notes:
1.Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
2.Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
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VBB |
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VCC 25 Ω |
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W = 10 |
L = 1860 |
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W = 10 L = 1860 |
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1000 pF |
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1000 pF |
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W = 10 L = 1000 |
W = 30 |
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W = 30 L = 100 |
W = 10 L = 1025 |
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L = 100 |
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TEST CIRCUIT |
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TEST CIRCUIT A: W = 20 |
L = 100 |
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BOARD MATL = 0.062" FR-4 (ε = 4.8) |
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TEST CIRCUIT B: W = 20 |
L = 200 x 2 |
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DIMENSIONS IN MILS |
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NOT TO SCALE |
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Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
4-34
Characterization Information, TA = 25° C
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AT-31011 |
AT-31033 |
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Symbol |
Parameters and Test Conditions |
Units |
Typ |
Typ |
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P1dB |
Power at 1 dB Gain Compression (opt tuning) |
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VCE = 2.7 V, IC = 10 mA |
f=0.9GHz |
dBm |
9 |
9 |
G1dB |
Gain at 1 dB Gain Compression (opt tuning) |
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VCE = 2.7 V, IC = 10 mA |
f=0.9GHz |
dB |
15 |
13 |
IP3 |
Output Third Order Intercept Point, |
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VCE = 2.7 V, IC = 10 mA (opt tuning) |
f = 0.9 GHz |
dBm |
20 |
20 |
|S21|E2 |
Gain in 50 Ω System; VCE = 2.7 V, IC = 1 mA |
f=0.9GHz |
dB |
10 |
9 |
CCB |
Collector-Base Capacitance |
VCB = 3V, f = 1 MHz |
pF |
0.04 |
0.04 |
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2.5 |
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2 |
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AMPLIFIER NF |
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(dB) |
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FIGURE |
1.5 |
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1 |
NF MIN. |
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NOISE |
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0.5 |
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1 mA |
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10 mA |
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0 |
0.5 |
1 |
1.5 |
2 |
2.5 |
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0 |
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FREQUENCY (GHz)
Figure 2. AT-31011 and AT-31033 Minimum Noise Figure and Amplifier NF[1] vs. Frequency and Current at VCEÊ =2.7 V.
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25 |
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20 |
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10 mA |
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(dB) |
15 |
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1 mA |
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Ga |
10 |
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5 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
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0 |
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FREQUENCY (GHz) |
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Figure 3. AT-31011 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCEÊ = 2.7 V.
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25 |
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20 |
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15 |
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10 mA |
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Ga (dB) |
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10 |
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1 mA |
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5 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
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0 |
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FREQUENCY (GHz) |
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Figure 4. AT-31033 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCEÊ = 2.7 V.
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10 |
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8 |
10 mA |
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(dBm)1dBP |
6 |
5 mA |
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(dB)1dBG |
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4 |
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2 |
2 mA |
2 mA |
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5 mA |
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10 mA |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
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0 |
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FREQUENCY (GHz) |
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20 |
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16 |
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8 |
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4 |
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2 mA |
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5 mA |
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0 |
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10 mA |
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0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
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0 |
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FREQUENCY (GHz)
G 1dB (dB)
16
12
8
4
2 mA
5 mA
10 mA
0
0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
FREQUENCY (GHz)
Figure 5. AT-31011 and AT-31033 Power at 1 dB Gain Compression vs. Frequency and Current at VCEÊ = 2.7 V.
Note:
Figure 6. AT-31011 1 dB Compressed Gain vs. Frequency and Current at VCEÊ =2.7 V.
Figure 7. AT-31033 1 dB Compressed Gain vs. Frequency and Current at VCEÊ =2.7 V.
1.Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and including circuit losses.
4-35
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