HP 5082-2900, 5082-2835, 5082-2811, 5082-2810, 5082-2303 Datasheet
...
Schottky Barrier Diodes for
General Purpose Applications
Technical Data
Features
•Low Turn-On Voltage
As Low as 0.34 V at 1 mA
•Pico Second Switching Speed
•High Breakdown Voltage
Up to 70 V
•Matched Characteristics Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace.
The 5082-2300 Series and 5082-2900 devices are unpassivated Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers.
Maximum Ratings
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
Outline 15
0.41 (.016)
0.36 (.014)
25.4 (1.00) MIN.
1.93 (.076)
1.73 (.068)
4.32 (.170)
3.81 (.150)
CATHODE
25.4 (1.00) MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Junction Operating and Storage Temperature Range |
-60°C to +100°C |
5082-2303, -2900 ................................................................. |
|
1N5711, 1N5712, 5082-2800/10/11 .................................... |
-65°C to +200°C |
5082-2835 ............................................................................ |
-60°C to +150°C |
DC Power Dissipation |
|
(Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. |
100 mW |
1N5711, 1N5712, 5082-2800/10/11 ................................................. |
250 mW |
5082-2835 ......................................................................................... |
150 mW |
Peak Inverse Voltage ................................................................................. |
VBR |
2
Package Characteristics
|
|
Outline 15 |
Lead Material ........................................................................................ |
Dumet |
|
Lead Finish .............................................................................. |
95-5% Tin-Lead |
|
Max. Soldering Temperature ................................................ |
260°C for 5 sec |
|
Min. Lead Strength .................................................................... |
4 pounds pull |
|
Typical Package Inductance |
|
|
1N5711, 1N5712: ................................................................................ |
2.0 nH |
|
2800 |
Series: ........................................................................................ |
2.0 nH |
2300 |
Series, 2900: .............................................................................. |
3.0 nH |
Typical Package Capacitance |
|
|
1N5711, 1N5712: ................................................................................ |
0.2 pF |
|
2800 |
Series: ........................................................................................ |
0.2 pF |
2300 |
Series, 2900: ............................................................................ |
0.07 pF |
The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D.
Electrical Specifications at TA = 25°C
General Purpose Diodes
|
|
Min. |
Max. |
VF = 1 V Max. |
|
Max. |
Max. |
|
|
Breakdown |
Forward |
at Forward |
Reverse Leakage |
Capaci- |
|
Part |
Package |
Voltage |
Voltage |
Current |
Current |
tance |
|
Number |
Outline |
VBR (V) |
VF (mV) |
IF (mA) |
IR (nA) at VR (V) |
CT (pF) |
|
5082-2800 |
15 |
70 |
410 |
15 |
200 |
50 |
2.0 |
|
|
|
|
|
|
|
|
1N5711 |
15 |
70 |
410 |
15 |
200 |
50 |
2.0 |
|
|
|
|
|
|
|
|
5082-2810 |
15 |
20 |
410 |
35 |
100 |
15 |
1.2 |
|
|
|
|
|
|
|
|
1N5712 |
15 |
20 |
550 |
35 |
150 |
16 |
1.2 |
|
|
|
|
|
|
|
|
5082-2811 |
15 |
15 |
410 |
20 |
100 |
8 |
1.2 |
|
|
|
|
|
|
|
|
5082-2835 |
15 |
8* |
340 |
10* |
100 |
1 |
1.0 |
Test |
|
IR = 10 μA |
IF = 1 mA |
*VF = 0.45 V |
|
|
VR = 0 V |
Conditions |
|
*IR = 100 μA |
|
|
|
|
f =1.0 MHz |
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835 which is measured at 20 mA.
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