NEW PRODUCT
DMP32D9UFZ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS |
RDS(ON) max |
ID max |
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TA = +25°C |
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5Ω @ VGS = -4.5V |
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-30V |
6Ω @ VGS = -2.5V |
-0.2A |
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7Ω @ VGS = -1.8V |
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10Ω @ VGS = -1.5V |
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Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
•General Purpose Interfacing Switch
•Power Management Functions
•Analog Switch
ESD PROTECTED
Features and Benefits
•Low Package Profile, 0.42mm Maximum Package height
•0.62mm x 0.62mm Package Footprint
•Low On-Resistance
•Very low Gate Threshold Voltage, 1.0V max
•ESD Protected Gate
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
•Case: X2-DFN0606-3
•Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0
•Moisture Sensitivity: Level 1 per J-STD-020
•Terminals: Finish – NiPdAu over Copper leadframe Solderable per MIL-STD-202, Method 208 e4
•Weight: 0.001 grams (approximate)
Bottom View |
Equivalent Circuit |
Top View |
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Package Pin Configuration |
Ordering Information (Note 4)
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Part Number |
Case |
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Packaging |
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DMP32D9UFZ-7B |
X2-DFN0606-3 |
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10K/Tape & Reel |
Notes: |
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. |
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2.See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogenand Antimony-free, "Green" and Lead-free.
3.Halogenand Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4.For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U2 = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP32D9UFZ |
1 of 6 |
June 2014 |
Document number: DS36842 Rev. 2 - 2 |
www.diodes.com |
© Diodes Incorporated |
NEW PRODUCT
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DMP32D9UFZ |
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Maximum Ratings (@TA = +25°C, unless otherwise specified.) |
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Symbol |
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Characteristic |
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Value |
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Units |
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Drain-Source Voltage |
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VDSS |
-30 |
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V |
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Gate-Source Voltage |
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VGSS |
±10 |
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V |
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Continuous Drain Current (Note 5) VGS = -4.5V |
Steady |
TA = +25°C |
ID |
-200 |
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mA |
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State |
TA = +70°C |
-100 |
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Pulsed Drain Current (Note 6) |
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IDM |
-500 |
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mA |
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Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
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Characteristic |
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Symbol |
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Value |
Units |
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Total Power Dissipation (Note 5) |
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Steady State |
PD |
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390 |
mW |
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Thermal Resistance, Junction to Ambient (Note 5) |
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Steady State |
RθJA |
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322 |
°C/W |
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Operating and Storage Temperature Range |
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TJ, TSTG |
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-55 to +150 |
°C |
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.) |
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Typ |
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Characteristic |
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Symbol |
Min |
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Max |
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Unit |
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Test Condition |
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OFF CHARACTERISTICS (Note 7) |
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Drain-Source Breakdown Voltage |
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BVDSS |
-30 |
— |
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— |
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V |
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VGS = 0V, ID = -250μA |
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Zero Gate Voltage Drain Current |
@TC = +25°C |
IDSS |
— |
— |
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100 |
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nA |
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VDS = -24V, VGS = 0V |
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Gate-Source Leakage |
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IGSS |
— |
— |
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±10 |
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µA |
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VGS = ±10V, VDS = 0V |
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ON CHARACTERISTICS (Note 7) |
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Gate Threshold Voltage |
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VGS(th) |
-0.4 |
— |
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-1.0 |
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V |
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VDS = VGS, ID = -250μA |
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— |
— |
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5 |
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VGS = -4.5V, ID = -100mA |
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— |
— |
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6 |
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VGS = -2.5V, ID = -50mA |
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Static Drain-Source On-Resistance |
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RDS (ON) |
— |
— |
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7 |
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Ω |
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VGS = -1.8V, ID = -20mA |
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— |
— |
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10 |
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VGS = -1.5V, ID = -10mA |
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— |
6 |
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— |
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VGS = -1.2V, ID = -1mA |
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Diode Forward Voltage |
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VSD |
— |
-0.75 |
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-1.0 |
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V |
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VGS = 0V, IS = -10mA |
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DYNAMIC CHARACTERISTICS (Note 8) |
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Input Capacitance |
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Ciss |
— |
22.5 |
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— |
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pF |
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VDS = -15V, VGS = 0V, |
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Output Capacitance |
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Coss |
— |
2.9 |
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— |
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pF |
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f = 1.0MHz |
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Reverse Transfer Capacitance |
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Crss |
— |
2.1 |
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— |
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pF |
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Total Gate Charge |
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Qg |
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0.35 |
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— |
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nC |
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VGS = -4.5V, VDS =- 15V, |
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Gate-Source Charge |
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Qgs |
— |
0.06 |
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— |
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nC |
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ID = -200mA |
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Gate-Drain Charge |
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Qgd |
— |
0.09 |
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— |
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nC |
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Turn-On Delay Time |
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tD(on) |
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3.1 |
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— |
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ns |
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Turn-On Rise Time |
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tr |
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2.3 |
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ns |
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VDD = -10V, VGS = -4.5V, |
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Turn-Off Delay Time |
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tD(off) |
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19.9 |
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ns |
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RG = 6Ω, ID = -200mA |
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Turn-Off Fall Time |
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tf |
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10.5 |
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ns |
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Notes: |
5. Device mounted on FR-4 PCB, with minimum recommended pad layout. |
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6.Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7.Short duration pulse test used to minimize self-heating effect.
8.Guaranteed by design. Not subject to product testing.
DMP32D9UFZ |
2 of 6 |
June 2014 |
Document number: DS36842 Rev. 2 - 2 |
www.diodes.com |
© Diodes Incorporated |
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