NPN SILICON PLANAR MEDIUM |
BCX38A/B/C |
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POWER DARLINGTON TRANSISTORS |
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ISSUE 1 – MARCH 94
FEATURES
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60 Volt VCEO |
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* Gain of 10K at IC=0.5 Amp |
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Ptot=1 Watt |
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C |
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B |
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E |
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E-Line |
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ABSOLUTE MAXIMUM RATINGS. |
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TO92 Compatible |
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PARAMETER |
SYMBOL |
VALUE |
UNIT |
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Collector-Base Voltage |
VCBO |
80 |
V |
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Collector-Emitter Voltage |
VCEO |
60 |
V |
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Emitter-Base Voltage |
VEBO |
10 |
V |
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Peak Pulse Current |
ICM |
2 |
A |
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Continuous Collector Current |
IC |
800 |
mA |
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Power Dissipation at Tamb=25°C |
Ptot |
1 |
W |
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Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +200 |
°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Collector-Base |
V(BR)CBO |
80 |
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V |
IC=10μA, IE=0 |
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Breakdown Voltage |
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Collector-Emitter |
VCEO(sus) |
60 |
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V |
IC=10mA, IB=0 |
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Sustaining Voltage |
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Emitter-Base |
V(BR)EBO |
10 |
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V |
IE=10μA, IC=0 |
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Breakdown Voltage |
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Collector Cut-Off |
ICBO |
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100 |
nA |
VCB=60V, IE=0 |
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Current |
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Emitter Cut-Off |
IEBO |
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100 |
nA |
VEB=8V, IC=0 |
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Current |
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Collector-Emitter |
VCE(sat) |
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1.25 |
V |
IC=800mA, IB=8mA* |
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Saturation Voltage |
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Base-Emitter |
VBE(on) |
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1.8 |
V |
IC=800mA, VCE=5V* |
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Turn-on Voltage |
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Static |
BCX38A |
hFE |
500 |
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IC=100mA, VCE=5V* |
Forward |
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1000 |
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IC=500mA, VCE=5V* |
Current |
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BCX38B |
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2000 |
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IC=100mA, VCE=5V* |
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Transfer |
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Ratio |
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4000 |
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IC=500mA, VCE=5V* |
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BCX38C |
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5000 |
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IC=100mA, VCE=5V* |
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10000 |
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IC=500mA, VCE=5V* |
3-20
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