NEW PRODUCT
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Description |
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Pin Assignments |
The 74LVC1G10 is a single 3-input positive NAND gate with a standard push-pull output. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are tolerant to 5.5V allowing this device to be used in a mixed voltage environment. The device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output preventing damaging current backflow when the device is powered down.
The gate performs the positive Boolean function:
Y = A •B •C or Y = A +B +C
(Top View) |
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(Top View) |
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A 1 |
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6 |
C |
A 1 |
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6 C |
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GND 2 |
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5 |
VCC |
GND 2 |
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5 VCC |
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B 3 |
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B 3 |
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SOT26 |
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4 |
Y |
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SOT363 |
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4 Y |
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(Top View) |
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(Top View) |
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A |
1 |
6 |
C |
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A |
1 |
6 |
C |
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GND |
2 |
5 |
V |
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GND |
2 |
5 |
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V |
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CC |
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CC |
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B |
3 |
4 |
Y |
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B |
3 |
4 |
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Y |
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DFN1010 |
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DFN1410 |
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Features
•Wide Supply Voltage Range from 1.65V to 5.5V
•± 24mA Output Drive at 3.3V
•CMOS low power consumption
•IOFF Supports Partial-Power-Down Mode Operation
•Inputs accept up to 5.5V
•ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)
•Latch-Up Exceeds 100mA per JESD 78, Class II
•Range of Package Options
•SOT26, SOT363, DFN1410, and DFN1010: Available in “Green” Molding Compound (no Br, Sb)
•Lead Free Finish/ RoHS Compliant (Note 1)
Applications
•Voltage Level Shifting
•General Purpose Logic
•Power Down Signal Isolation
•Wide array of products such as:
o PCs, networking, notebooks, netbooks, PDAs
o Computer peripherals, hard drives, CD/DVD ROM o TV, DVD, DVR, set top box
o Cell Phones, Personal Navigation / GPS o MP3 players ,Cameras, Video Recorders
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
74LVC1G10 |
1 of 13 |
October 2011 |
Document number: DS35121 Rev. 3 - 2 |
www.diodes.com |
© Diodes Incorporated |
NEW PRODUCT
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Pin Descriptions
Pin Name |
Description |
A |
Data Input |
GND |
Ground |
B |
Data Input |
Y |
Data Output |
VCC |
Supply Voltage |
C |
Data Input |
Logic Diagram
A |
1 |
4 |
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3 |
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B |
Y |
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6 |
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C |
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Function Table
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Inputs |
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Output |
A |
B |
C |
Y |
H |
H |
H |
L |
L |
X |
X |
H |
X |
L |
X |
H |
X |
X |
L |
H |
Absolute Maximum Ratings (Note 2)
Symbol |
Description |
Rating |
Unit |
ESD HBM |
Human Body Model ESD Protection |
2 |
KV |
ESD MM |
Machine Model ESD Protection |
200 |
V |
VCC |
Supply Voltage Range |
-0.5 to 6.5 |
V |
VI |
Input Voltage Range |
-0.5 to 6.5 |
V |
VO |
Voltage applied to output in high impedance or IOFF state |
-0.5 to 6.5 |
V |
VO |
Voltage applied to output in high or low state |
-0.3 to VCC +0.5 |
V |
IIK |
Input Clamp Current VI<0 |
-50 |
mA |
IOK |
Output Clamp Current |
-50 |
mA |
IO |
Continuous output current |
±50 |
mA |
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Continuous current through Vdd or GND |
±100 |
mA |
TJ |
Operating Junction Temperature |
-40 to 150 |
°C |
TSTG |
Storage Temperature |
-65 to 150 |
°C |
Notes: 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values.
74LVC1G10 |
2 of 13 |
October 2011 |
Document number: DS35121 Rev. 3 - 2 |
www.diodes.com |
© Diodes Incorporated |
NEW PRODUCT
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Recommended Operating Conditions (Note 3)
Symbol |
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Parameter |
Min |
Max |
Unit |
VCC |
Operating Voltage |
Operating |
1.65 |
5.5 |
V |
Data retention only |
1.5 |
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V |
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VCC = 1.65V to 1.95V |
0.65 X VCC |
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VIH |
High-level Input Voltage |
VCC = 2.3V to 2.7V |
1.7 |
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V |
VCC = 3V to 3.6V |
2 |
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VCC = 4.5V to 5.5V |
0.7 X VCC |
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VCC = 1.65V to 1.95V |
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0.35 X VCC |
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VIL |
Low-level input voltage |
VCC = 2.3V to 2.7V |
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0.7 |
V |
VCC = 3V to 3.6V |
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0.8 |
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VCC = 4.5V to 5.5V |
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0.3 X VCC |
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VI |
Input Voltage |
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0 |
5.5 |
V |
VO |
Output Voltage |
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0 |
VCC |
V |
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VCC = 1.65V |
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-4 |
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VCC = 2.3V |
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-8 |
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IOH |
High-level output current |
VCC = 3V |
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-16 |
mA |
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-24 |
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VCC = 4.5V |
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-32 |
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VCC = 1.65V |
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4 |
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VCC = 2.3V |
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8 |
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IOL |
Low-level output current |
VCC = 3V |
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16 |
mA |
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24 |
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VCC = 4.5V |
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32 |
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Input transition rise or fall |
VCC = 1.8V ± 0.15V, 2.5V ± 0.2V |
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20 |
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t/ V |
VCC = 3.3V ± 0.3V |
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10 |
ns/V |
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rate |
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VCC = 5V ± 0.5V |
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5 |
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TA |
Operating free-air |
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-40 |
125 |
ºC |
temperature |
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Notes: 3. Unused inputs should be held at Vcc or Ground.
74LVC1G10 |
3 of 13 |
October 2011 |
Document number: DS35121 Rev. 3 - 2 |
www.diodes.com |
© Diodes Incorporated |
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Electrical Characteristics TA = -40°C to 85°C (All typical values are at VCC = 3.3V, TA = 25°C)
NEW PRODUCT
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Symbol |
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Parameter |
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Test Conditions |
VCC |
Min |
Typ. |
Max |
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Unit |
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IOH = -100μA |
1.65V to 5.5V |
VCC – 0.1 |
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IOH = -4mA |
1.65V |
1.2 |
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VOH |
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High Level Output |
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IOH = -8mA |
2.3V |
1.9 |
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V |
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Voltage |
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IOH = -16mA |
3V |
2.4 |
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IOH = -24mA |
2.3 |
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IOH = -32mA |
4.5V |
3.8 |
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IOL = 100μA |
1.65V to 5.5V |
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0.1 |
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IOL = 4mA |
1.65V |
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0.45 |
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VOL |
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High-level Input Voltage |
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IOL = 8mA |
2.3V |
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0.3 |
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V |
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IOL = 16mA |
3V |
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0.4 |
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IOL = 24mA |
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0.55 |
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IOL = 32mA |
4.5V |
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0.55 |
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II |
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Input Current |
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VI = 5.5 V or GND |
0 to 5.5V |
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± 5 |
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μA |
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IOFF |
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Power Down Leakage |
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VI or VO = 5.5V |
0 |
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± 10 |
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μA |
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Current |
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ICC |
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Supply Current |
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VI = 5.5V of GND |
1.65V to 5.5V |
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10 |
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μA |
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IO=0 |
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ICC |
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Additional Supply |
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Input at VCC –0.6V |
3V to 5.5V |
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500 |
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μA |
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Current |
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74LVC1G10 |
4 of 13 |
October 2011 |
Document number: DS35121 Rev. 3 - 2 |
www.diodes.com |
© Diodes Incorporated |
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Electrical Characteristics TA = -40°C to 125°C (All typical values are at VCC = 3.3V, TA = 25°C)
NEW PRODUCT
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Symbol |
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Parameter |
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Test Conditions |
VCC |
Min |
Typ. |
Max |
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Unit |
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IOH = -100μA |
1.65V to 5.5V |
VCC – 0.1 |
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IOH = -4mA |
1.65V |
0.95 |
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VOH |
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High Level Output |
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IOH = -8mA |
2.3V |
1.7 |
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V |
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Voltage |
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IOH = -16mA |
3V |
1.9 |
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IOH = -24mA |
2.0 |
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IOH = -32mA |
4.5V |
3.4 |
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IOL = 100μA |
1.65V to 5.5V |
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0.1 |
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IOL = 4mA |
1.65V |
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0.70 |
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VOL |
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High-level Input Voltage |
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IOL = 8mA |
2.3V |
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0.45 |
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V |
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IOL = 16mA |
3V |
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0.60 |
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IOL = 24mA |
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0.80 |
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IOL = 32mA |
4.5V |
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0.80 |
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II |
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Input Current |
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VI = 5.5 V or GND |
0 to 5.5V |
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± 20 |
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μA |
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IOFF |
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Power Down Leakage |
VI or VO = 5.5V |
0 |
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± 20 |
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μA |
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Current |
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ICC |
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Supply Current |
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VI = 5.5V of GND |
1.65V to 5.5V |
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40 |
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μA |
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IO=0 |
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ICC |
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Additional Supply |
Input at VCC –0.6V |
3V to 5.5V |
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5000 |
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μA |
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Current |
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Ci |
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Input Capacitance |
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Vi = VCC – or GND |
3.3 |
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4 |
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pF |
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SOT26 |
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204 |
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θJA |
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Thermal Resistance |
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SOT363 |
(Note 4) |
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371 |
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oC/W |
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DFN1410 |
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430 |
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Junction-to-Ambient |
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DFN1010 |
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510 |
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SOT26 |
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52 |
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θJC |
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Thermal Resistance |
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SOT363 |
(Note 4) |
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143 |
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oC/W |
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DFN1410 |
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190 |
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Junction-to-Case |
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DFN1010 |
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250 |
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Package Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
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Symbol |
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Parameter |
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Test Conditions |
VCC |
Min |
Typ. |
Max |
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Unit |
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CI |
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Input Capacitance |
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VI = VCC – or GND |
3.3 |
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3.5 |
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pF |
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SOT26 |
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204 |
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θJA |
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Thermal Resistance |
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SOT363 |
(Note 4) |
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371 |
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oC/W |
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DFN1410 |
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430 |
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Junction-to-Ambient |
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DFN1010 |
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510 |
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SOT26 |
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52 |
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θJC |
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Thermal Resistance |
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SOT363 |
(Note 4) |
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143 |
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oC/W |
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DFN1410 |
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190 |
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Junction-to-Case |
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DFN1010 |
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250 |
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Notes: 4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74LVC1G10 |
5 of 13 |
October 2011 |
Document number: DS35121 Rev. 3 - 2 |
www.diodes.com |
© Diodes Incorporated |
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