Diodes PAM8603M User Manual

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A Product Line of

Diodes Incorporated

PAM8603M

3W FILTERLESS STEREO CLASS-D AUDIO AMPLIFIER WITH DC VOLUME CONTROL

Description

 

Pin Assignments

The PAM8603M is a 3W, sterero, Class-D audio amplifier with DC volume control. It offers low THD+N, allowing it to produce highquality sound reproduction. The new filterless architecture allows the device to drive the speaker directly, requiring no low-pass output filters, which saves the system cost and PCB area.

With the same numbers of external components, the efficiency of the PAM8603M is much better than class-AB cousins. It can extend the battery life thus ideal for portable applications.

The PAM8603M is available in SSOP-24 and SOP-18 packages.

Features

3W Output at 10% THD with a 4Ω Load and 5V Power Supply

Filterless, Low Quiescent Current and Low EMI

Low THD+N

64-Step DC Volume Control from -75dB to +24dB

Superior Low Noise

Efficiency up to 89%

Short Circuit Protection

Thermal Shutdown

Few External Components to Save the Space and Cost

Pb-Free Package

Applications

LCD Monitors/TV Projectors

Notebook Computers

Portable Speakers

Portable DVD Players, Game Machines

Cellular Phones/Speaker Phones

PAM8603M

1 of 14

November 2012

Document number: DSxxxxx Rev. 1 - 1

www.diodes.com

© Diodes Incorporated

A Product Line of

Diodes Incorporated

PAM8603M

Typical Applications Circuit

Pin Descriptions

 

Pin

Package Name

Function

 

Name

SSOP-24

SOP-18

 

 

+OUTL

1

1

Left Channel Positive Output

PGNDL

2, 3

2

Left Channel Power GND

-OUTL

4

3

Left Channel Negative Output

PVDDL

5

4

Left Channel Power Supply

 

 

 

 

6

5

Mute Control Input (active low)

 

MUTE

 

VDD

7

6

Analog Power Supply

 

INL

8

7

Left Channel Input

 

NC

9, 12, 13, 15, 16

8

No Connection

 

VDC

10

9

Analog reference for gain control section.

VOLUME

11

10

DC volume control to set the gain of Class-D.

 

VREF

14

11

Internal analog reference, connect a bypass capacitor from VREF to GND.

 

INR

17

12

Right Channel Input

 

GND

18

13

Analog Ground

 

 

 

19

14

Shutdown Control Input (active low)

 

SHDN

PVDDR

20

15

Right Channel Power Supply

-OUTR

21

16

Right Channel Negative Output

PGNDR

22, 23

17

Right Channel Power GND

+OUTR

24

18

Right Channel Positive Output

PAM8603M

2 of 14

November 2012

Document number: DSxxxxx Rev. 1 - 1

www.diodes.com

© Diodes Incorporated

Diodes PAM8603M User Manual

A Product Line of

Diodes Incorporated

PAM8603M

Functional Block Diagram

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

 

Parameter

Rating

Unit

 

 

Supply Voltage

6.0

V

 

 

Input Voltage

-0.3 to VDD +0.3

 

 

 

 

 

Maximum Junction Temperature

150

 

 

 

Storage Temperature

-65 to +150

°C

 

 

Soldering Temperature

300, 5sec

 

 

 

 

 

 

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)

 

 

 

 

 

 

Parameter

 

Rating

Unit

 

 

Supply Voltage Range

 

2.8 to 5.5

V

 

 

Ambient Temperature Range

 

-40 to +85

°C

 

 

Junction Temperature Range

 

-40 to +125

°C

 

Thermal Information

Parameter

Package

 

Symbol

Max

Unit

 

Thermal Resistance (Junction to Ambient)

SSOP-24

 

θJA

96

 

 

SOP-18

 

70

°C/W

 

 

 

 

 

Thermal Resistance (Junction to Case)

SSOP-24

 

θJC

18

 

 

 

 

SOP-18

 

16

 

 

 

 

 

 

 

PAM8603M

 

 

3 of 14

 

 

November 2012

Document number: DSxxxxx Rev. 1 - 1

 

www.diodes.com

 

 

© Diodes Incorporated

 

 

 

 

 

 

A Product Line of

 

 

 

 

 

 

 

 

 

 

 

Diodes Incorporated

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PAM8603M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 20dB, unless otherwise specified.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Conditions

 

 

Min

Typ

 

Max

Units

 

 

VDD

Supply Power

 

 

 

 

 

2.8

 

 

 

5.5

V

 

 

 

 

 

THD+N = 10%, f = 1kHz, RL

= 4Ω

 

VDD = 5.0V

 

2.85

3.2

 

 

 

W

 

 

 

 

 

 

VDD = 3.6V

 

1.55

1.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THD+N = 1%, f = 1kHz, RL = 4Ω

 

VDD = 5.0V

 

2.35

2.6

 

 

 

W

 

 

 

PO

Output Power

 

VDD = 3.6V

 

1.25

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THD+N = 10%, f = 1kHz, RL

= 8Ω

 

VDD = 5.0V

 

1.55

1.8

 

 

 

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD = 3.6V

 

0.75

0.9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THD+N = 1%, f = 1kHz, RL = 8Ω

 

VDD = 5.0V

 

1.15

1.4

 

 

 

W

 

 

 

 

 

 

VDD = 3.6V

 

0.5

0.72

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD = 5.0V, Po = 0.5W, RL = 8Ω

 

f = 1kHz

 

 

0.15

 

0.3

%

 

 

 

THD+N

Total Harmonic Distortion Plus

VDD = 3.6V, Po = 0.5W, RL = 8Ω

 

 

 

0.11

 

0.25

 

 

 

 

 

 

 

 

 

 

 

 

Noise

VDD = 5.0V, Po = 1W, RL = 4Ω

 

f = 1kHz

 

 

0.15

 

0.3

%

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD = 3.6V, Po = 1W, RL = 4Ω

 

 

 

0.11

 

0.25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PSRR

Power Supply Ripple Rejection

VDD = 5.0V, Inputs AC-Grounded

 

f = 100Hz

 

 

-59

 

 

-50

dB

 

 

 

 

f = 1kHz

 

 

-58

 

 

-50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CS

Crosstalk

VDD = 5.0V, Po = 0.5W, RL = 8Ω, f = 1kHz

 

 

 

-58

 

 

 

dB

 

 

 

SNR

Signal-to-Noise

VDD = 5V, VO_RMS = 1V, f = 1kHz

 

 

85

-95

 

 

-80

dB

 

 

 

VN

Output Noise

VDD = 5V, Inputs AC-Grounded with

 

A-weighting

 

 

98

 

 

150

µV

 

 

 

CIN = 0.47μF

 

 

No A-weighting

 

 

120

 

 

300

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Dyn

Dynamic Range

VDD = 5V, THD = 1%, f = 1kHz

 

 

90

102

 

 

 

dB

 

 

 

η

Efficiency

RL = 8Ω, THD = 10%

 

 

f = 1kHz

 

85

89

 

 

 

%

 

 

 

RL = 4Ω, THD = 10%

 

 

 

80

85

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IQ

Quiescent Current

VDD = 5.0V

 

 

No load

 

 

13.5

 

20

mA

 

 

 

VDD = 3.6V

 

 

 

 

8.5

 

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IMUTE

Muting Current

VDD = 5.0V, VMUTE = 0.3V

 

 

 

 

 

2.7

 

 

5

mA

 

 

 

ISD

Shutdown Current

VDD = 2.5V to 5.5V, VSD = 0.3V

 

 

 

 

 

 

1

µA

 

 

 

RDS(ON)

Static Drain-to-Source On-State

IDS = 500mA,VGS = 5V

 

 

PMOS

 

 

240

 

 

500

mΩ

 

 

 

Resistor

 

 

NMOS

 

 

180

 

 

350

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

fsw

Switching Frequency

VDD = 3V to 5V

 

 

 

 

200

260

 

 

300

kHz

 

 

 

VOS

Output Offset Voltage

VIN = 0V, VDD = 5V

 

 

 

 

 

10

 

 

50

mV

 

 

 

VIH

SD/MUTE Input High

VDD = 5V

 

 

 

 

 

1.45

 

 

V

 

 

 

VIL

SD/MUTE Input Low

VDD = 5V

 

 

 

 

 

0.65

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OTP

Over Temperature Protection

No Load, Junction Temperature, VDD = 5V

 

 

135

 

 

 

°C

 

 

 

OTH

Over Temperature Hysterisis

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PAM8603M

4 of 14

November 2012

Document number: DSxxxxx Rev. 1 - 1

www.diodes.com

© Diodes Incorporated

A Product Line of

Diodes Incorporated

PAM8603M

Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.)

PAM8603M

5 of 14

November 2012

Document number: DSxxxxx Rev. 1 - 1

www.diodes.com

© Diodes Incorporated

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