Diodes AP2182MPG, AP2182SG, AP2192MPG, AP2192SG Schematics

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AP2182/ AP2192

1.5A DUAL CHANNEL CURRENT-LIMITED POWER SWITCH

Description

The AP2182 and AP2192 are integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB 2.0 and available with both polarities of Enable input. They offer current and thermal limiting and short circuit protection as well as controlled rise time and under-voltage lockout functionality. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external components.

All devices are available in SO-8 and MSOP-8EP packages.

Features

Dual USB port power switches

Over-current and thermal protection

2.1A accurate current limiting

Reverse Current Blocking

115mΩ on-resistance

Input voltage range: 2.7V - 5.5V

0.6ms typical rise time

Very low shutdown current: 1µA (max)

Fault report (FLG) with blanking time (7ms typ)

ESD protection: 4.5KV HBM, 350V MM

Active high (AP2192) or active low (AP2182) enable

Ambient temperature range -40ºC to +85°C

SO-8 and MSOP-8EP (Exposed Pad): Available in “Green” Molding Compound (No Br, Sb)

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

UL Recognized, File Number E322375

IEC60950-1 CB Scheme Certified

Pin Assignments

( Top View )

 

 

 

 

 

GND

1

 

8

NC

 

 

 

 

 

IN

2

 

7

OUT

 

 

 

 

 

IN

3

 

6

OUT

 

 

 

 

 

 

 

 

 

 

EN

4

 

5

FLG

 

 

 

 

 

 

 

 

 

 

SO-8

( Top View )

GND

1

8

NC

IN

2

7

OUT

IN

3

6

OUT

EN

4

5

FLG

MSOP-8EP

Applications

Consumer electronics – LCD TV & Monitor, Game Machines

Communications – Set-Top-Box, GPS, Smartphone

Computing – Laptop, Desktop, Servers, Printers, Docking Station, HUB

Notes:

1.

No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

 

2.

See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogenand Antimony-free, "Green"

 

 

and Lead-free.

 

3.

Halogenand Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

 

 

<1000ppm antimony compounds.

Typical Applications Circuit

AP2192 Enable Active High

Power Supply

2.7V to 5.5V

 

 

 

IN

OUT1

Load

 

 

 

 

0.1uF

68uF

10k

10k

10uF

0.1uF

 

 

 

 

 

FLG1

OUT2

Load

 

 

 

FLG2

0.1uF

68uF

 

 

ON

EN1

 

 

 

OFF

 

EN2

GND

 

 

 

 

 

 

 

 

 

 

AP2182/ AP2192

1 of 17

April 2013

Document number: DS31569 Rev. 7 - 2

www.diodes.com

© Diodes Incorporated

 

 

 

 

 

AP2182/ AP2192

Available Options

 

 

 

 

 

Part Number

Channel

Enable Pin

Current Limit

 

Recommended Maximum

(EN)

(typ)

 

Continuous Load Current

 

 

 

AP2182

2

Active Low

2.1A

 

1.5A

AP2192

2

Active High

2.1A

 

1.5A

Pin Descriptions

Pin

Pin Number

Function

Name

SO-8

MSOP-8EP

 

GND

1

1

Ground

IN

2

2

Voltage input pin

EN1

3

3

Switch 1 enable input, active low (AP2182) or active high (AP2192)

EN2

4

4

Switch 2 enable input, active low (AP2182) or active high (AP2192)

FLG2

5

5

Switch 2 over-current and over-temperature fault report; open-drain flag is active low when triggered

OUT2

6

6

Switch 2 voltage output pin

OUT1

7

7

Switch 1 voltage output pin

FLG1

8

8

Switch 1 over-current and over-temperature fault report; open-drain flag is active low when triggered

 

 

 

Exposed pad.

Exposed Tab

Exposed Tab

It should be connected to GND and thermal mass for enhanced thermal impedance.

 

 

 

It should not be used as electrical ground conduction path.

Functional Block Diagram

A P 2182, A P 2192

Therm al

 

 

S ense

 

E N 1

D river

C urrent

 

Lim it

 

 

U V LO

 

 

 

 

C urrent

 

 

S ense

IN

 

 

 

 

C urrent

 

 

S ense

U V LO

 

 

 

D river

C urrent

E N 2

Lim it

 

 

Therm al

 

 

S ense

 

D eglitch

F LG 1

G N D

O U T 1

D eglitch

O U T 2

FLG 2

G N D

AP2182/ AP2192

2 of 17

April 2013

Document number: DS31569 Rev. 7 - 2

www.diodes.com

© Diodes Incorporated

AP2182/ AP2192

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Rating

Unit

ESD HBM

Human Body Model ESD Protection

3

kV

ESD MM

Machine Model ESD Protection

300

V

VIN

Input Voltage

6.5

V

VOUT

Output Voltage

VIN +0.3

V

VEN , VFLG

Enable Voltage

6.5

V

ILOAD

Maximum Continuous Load Current

Internal Limited

A

TJ(MAX)

Maximum Junction Temperature

150

°C

TST

Storage Temperature Range (Note 4)

-65 to +150

°C

Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

 

affected by exposure to absolute maximum rating conditions for extended periods of time.

 

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

 

and transporting these devices

Note:

4. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C)

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Min

Max

Units

VIN

Input voltage

2.7

5.5

V

IOUT

Output Current

0

1.5

A

VIL

EN Input Logic Low Voltage

0

0.8

V

VIH

EN Input Logic High Voltage

2

VIN

V

TA

Operating Ambient Temperature

-40

+85

C

AP2182/ AP2192

3 of 17

April 2013

Document number: DS31569 Rev. 7 - 2

www.diodes.com

© Diodes Incorporated

AP2182/ AP2192

Electrical Characteristics (@TA = +25°C, VIN = +5V, unless otherwise specified.)

Symbol

 

Parameter

 

Test Conditions

Min

Typ

Max

Unit

VUVLO

 

Input UVLO

RLOAD = 1kΩ

 

1.6

1.9

2.5

V

ISHDN

 

Input Shutdown Current

Disabled, IOUT = 0

 

 

0.5

1

µA

IQ

 

Input Quiescent Current, Dual

Enabled, IOUT = 0

 

 

100

160

µA

ILEAK

 

Input Leakage Current

Disabled, OUT grounded

 

 

1

µA

IREV

 

Reverse Leakage Current

Disabled, VIN = 0V, VOUT = 5V, IREV at VIN

 

1

 

µA

 

 

 

VIN = 5V,

MSOP-8EP, -40°C ≤ TA ≤ +85°C

 

115

150

mΩ

RDS(ON)

 

Switch on-resistance

IOUT = 0.5A,

SO-8, -40°C ≤ TA ≤ +85°C

 

120

160

mΩ

 

 

 

VIN = 3.3V, IOUT = 0.5A, -40°C ≤ TA ≤ 85°C

 

140

180

mΩ

ISHORT

 

Short-circuit current limit

Enabled into short circuit, CL = 68µF

 

2.0

 

A

ILIMIT

 

Over-Load Current Limit

VIN = 5V, VOUT = 4.5V, CL = 68µF, -40°C ≤ TA ≤ +85°C

1.6

2.1

2.6

A

ITrig

 

Current limiting trigger threshold

VIN = VEN, Output Current Slew rate (<100A/WS), CL = 68µF

 

3.0

 

A

VIL

 

EN Input Logic Low Voltage

VIN = 2.7V to 5.5V

 

 

 

0.8

V

VIH

 

EN Input Logic High Voltage

VIN = 2.7V to 5.5V

 

2

 

 

V

ISINK

 

EN Input leakage

VEN = 5V

 

 

 

1

µA

TD(ON)

 

Output turn-on delay time

CL=1µF, RLOAD = 10Ω

 

0.05

 

ms

TR

 

Output turn-on rise time

CL=1µF, RLOAD = 10Ω

 

0.6

1.5

ms

TD(OFF)

 

Output turn-off delay time

CL=1µF, RLOAD = 10Ω

 

0.01

 

ms

TF

 

Output turn-off fall time

CL=1µF, RLOAD = 10Ω

 

0.05

0.1

ms

RFLG

 

FLG output FET on-resistance

IFLG =10mA

 

 

30

50

TBlank

 

FLG blanking time

CIN =10µF, CL = 68µF

4

7

15

ms

TSHDN

 

Thermal shutdown threshold

Enabled, RLOAD = 1kΩ

 

140

 

C

THYS

 

Thermal shutdown hysteresis

 

 

 

25

 

C

θJA

 

Thermal Resistance Junction-to-Ambient

SO-8 (Note 5)

 

 

110

 

oC/W

 

MSOP-8EP (Note 6)

 

60

 

oC/W

Notes:

5. Test condition for SO-8: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad layout.

 

 

 

 

6.Test condition for MSOP-8EP: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom layer ground plane.

AP2182/ AP2192

4 of 17

April 2013

Document number: DS31569 Rev. 7 - 2

www.diodes.com

© Diodes Incorporated

 

 

 

 

 

 

 

AP2182/ AP2192

Typical Performance Characteristics

 

 

 

 

 

VEN

50%

 

50%

VEN

50%

 

50%

 

 

 

 

 

 

 

 

TR

TD(OFF)

 

 

TR

TD(OFF)

CL=1uF

 

 

TF

 

 

TF

 

 

 

 

 

 

TA=25°C

 

TD(ON)

 

 

 

TD(ON)

 

 

 

90%

90%

 

90%

90%

RL=5Ω

 

 

 

 

 

VOUT

 

10%

10%

VOUT

 

10%

10%

 

 

 

 

 

 

Figure 1 Voltage Waveforms: AP2182 (left), AP2192 (right)

All Enable Plots are for AP2192 Active High

Channel 1 Turn-On Delay and Rise Time

Channel 1 Turn-Off Delay and Fall Time

Ven 1 5V/div

Vout 1 2V/div

Ven 1 5V/div

Vout 1

CL= 1µF

TA = +25°C

2V/div

CL = 1µF

RL = 5Ω

 

TA = +25°C

 

RL = 5Ω

 

400µs/div

400µs/div

Channel 2 Turn-On Delay and Rise Time

Channel 2 Turn-Off Delay and Fall Time

Ven 2 5V/div

Vout 2 2V/div

 

Ven 2

 

5V/div

 

Vout 2

 

2V/div

 

CL=1µF

 

TA = +25°C

 

RL = 5Ω

400µs/div

400µs/div

CL=1µF TA=25°C RL=5Ω

AP2182/ AP2192

5 of 17

April 2013

Document number: DS31569 Rev. 7 - 2

www.diodes.com

© Diodes Incorporated

Diodes AP2182MPG, AP2182SG, AP2192MPG, AP2192SG Schematics

AP2182/ AP2192

Typical Performance Characteristics (cont.)

Channel 1 Turn-On Delay and Rise Time

Channel 1 Turn-Off Delay and Fall Time

Ven 2

Ven 2

 

5V/div

5V/div

 

 

 

CL = 100µF

Vout 2

Vout 2

TA = +25°C

RL = 5Ω

2V/div

2V/div

CL = 100µF

 

 

TA = +25°C

 

 

RL = 5Ω

 

 

400µs/div

 

400µs/div

 

 

Channel 2 Turn-On Delay and Rise Time

 

Channel 2 Turn-Off Delay and Fall Time

Ven 2

Ven 2

 

5V/div

5V/div

 

 

 

CL = 100µF

Vout 2

Vout 2

TA = +25°C

RL = 5Ω

2V/div

2V/div

 

CL = 100µF

 

 

TA = +25°C

 

 

RL = 5Ω

 

400µs/div

 

400µs/div

Ven 1 5V/div

Iout 1 500mA/div

Channel 1 Short Circuit Current,

Channel 2 Short Circuit Current,

Device Enabled Into Short

Device Enabled Into Short

Ven 2 5V/div

 

Iout 2

 

500mA/div

 

VIN = 5V

 

TA = 25°C

 

CL = 68µF

500µs/div

500µs/div

VIN = 5V TA = +25°C CL = 68µF

AP2182/ AP2192

6 of 17

April 2013

Document number: DS31569 Rev. 7 - 2

www.diodes.com

© Diodes Incorporated

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