Diodes PAM8902HKER, PAM8902HZER Schematic [ru]

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A Product Line of

Diodes Incorporated

PAM8902H

30 VPP MONO CLASS-D AUDIO AMPLIFIER FOR PIEZO/CERAMIC SPEAKERS

Description

 

Pin Assignments

The PAM8902H is a mono, Class-D audio amplifier with integrated boost convertor designed for piezo and ceramic speakers.The PAM8902H is capable of driving a ceramic/ piezo speaker with 30Vpp(10.6Vrms) from a 3.6V power supply.The PAM8902H's Boost converter operates at a fixed frequency of 1.5MHz , and provides a 17.5V supply with a minimum number of external components. PAM8902H features an integrated audio low pass filter that rejects high frequency noise thus improving audio fidelity. And three gain modes of 21dB, 26dB and 32.5dB easy for using.PAM8902H also provides thermal ,short, under and over voltage protection.

The PAM8902H is available in a 16-ball 1.95mm x 1.95mm CSP package and 16-pin QFN4x4 package.

Features

Supply Voltage Range From 2.5V to 5.5V

30 VPP Output Load Voltage From a 2.5V Supply

Integrated Boost Converter Generates 17.5V Supply

Programmable Soft-Start

Small Boost Converter Inductor

Selectable Gain of 21dB, 26dB, and 32.5dB

Selectable Boost Output Voltage of 8V, 12V, and 17.5V

Low Shutdown Current: <1µA

Build in Thermal , OCP ,OVP,Short Protection

Available in Space Saving Packages:

16-ball 1.95mmx1.95mm CSP Package

16-pin QFN4x4 Package

Applications

Wireless or Cellular Handsets

Portable DVD Player

Personal Digital Assistants (PDAs )

Electronic Dictionaries

Digital Still Cameras

PAM8902H

1 of 12

December 2012

Document number: DSxxxxx Rev. 1 - 0

www.diodes.com

© Diodes Incorporated

A Product Line of

Diodes Incorporated

PAM8902H

Typical Applications Circuit

Pin Descriptions

Pin Name

Bump (CSP)

Pin Number (QFN)

Function

PVCC

A1

16

Audio Amplifier Power Supply

VOUT

A2

1

Boost Convertor Output

SW

A3

2

Boost Convertor Switching Node

PGND1

A4

4

Boost Convertor Power Ground

OUT+

B1

15

Positive Differential Audio Output

VSET

B2

3

Boost Convertor Output Voltage Setting (8V,12V,17.5V)

COMP

B3

5

Boost Convertor compensation

AVDD

B4

6

Power Supply

OUT-

C1

14

Negative Differential Audio Output

GSET

C2

11

Amplifier Gain setting ( 21dB , 26dB , 32.5dB)

VCM

C3

7

Common Mode bypass Cap

AGND

C4

8

Analog Ground

PGND2

D1

13

Class D Power Ground

ENA

D2

12

Whole chip Enable

INN

D3

10

Negative Differential Audio Input

INP

D4

9

Positive Differential Audio Input

PAM8902H

2 of 12

December 2012

Document number: DSxxxxx Rev. 1 - 0

www.diodes.com

© Diodes Incorporated

Diodes PAM8902HKER, PAM8902HZER Schematic

A Product Line of

Diodes Incorporated

PAM8902H

Functional Block Diagram

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

Parameter

Rating

Unit

Supply Voltage

6.0

V

Input Voltage

-0.3 to VDD +0.3

 

Storage Temperature

-65 to 150

 

Maximum Junction Temperature

150

°C

Soldering Temperature

250, 10sec

 

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)

Parameter

Rating

 

Unit

 

Supply Voltage Range

2.5 to 5.5

 

V

 

Ambiient Temperature Range

-40 to +85

 

°C

 

Junction Temperature Range

-40 to +125

 

 

 

 

 

PAM8902H

 

 

3 of 12

December 2012

Document number: DSxxxxx Rev. 1 - 0

 

www.diodes.com

© Diodes Incorporated

A Product Line of

Diodes Incorporated

PAM8902H

Thermal Information

 

Parameter

 

Symbol

Package

 

Maximum

 

Unit

 

 

 

 

Thermal Resistance

 

θJA

CSP

 

90

 

 

°C/W

 

 

 

 

(Junction to Ambient)

 

QFN4x4-16

 

52

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance

 

θJC

CSP

 

72

 

 

°C/W

 

 

 

 

(Junction to Case)

 

QFN4x4-16

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics (@TA = +25°C, VDD = 3.6V, CL = 1µF, VSET Float, unless otherwise specified.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

Parameter

Conditions

 

Min

 

Typ

Max

Unit

 

 

VDD

Input Voltage

 

 

 

 

2.5

 

 

5.5

V

 

 

 

 

 

 

 

EN > 1.2V, VSET = High

 

 

 

30

48

 

 

 

 

IQ

Quiescent Current

 

EN > 1.2V, VSET = Floating

 

 

 

10

18

mA

 

 

 

 

 

 

 

EN > 1.2V, VSET = GND

 

 

 

5

12

 

 

 

 

ISD

Shutdown Current

 

EN = 0V

 

 

 

0.1

1.0

µA

 

 

 

TWU

Wake-Up Time

 

EN From Low to High

 

 

 

40

 

mS

 

 

 

VEH

Chip Enable

 

 

 

 

1.2

 

 

 

V

 

 

 

VEL

Chip Disable

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VH

GSET/VSET High

 

 

 

 

VDD -0.5

 

 

VDD

 

 

 

 

VF

GSET/VSET Floating

 

 

 

 

1

 

 

VDD -1

V

 

 

 

VL

GSET/VSET Low

 

 

 

 

0

 

 

0.5

 

 

 

 

UVLO

Under Voltage Lockout Threshold

VDD From High to Low

 

 

 

2.2

 

V

 

 

 

UVLOH

Under Voltage Lockout Hysteresis

VDD From Low to High

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

OTP

Thermal Shutdown Threshold

 

 

 

 

 

150

 

°C

 

 

 

OTPH

Thermal Shutdown Lockout Hysteresis

 

 

 

 

 

30

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Boost Converter

 

 

 

 

 

 

 

 

 

 

 

 

VO1

 

 

 

VSET = GND, No Load

 

7.2

 

8.0

8.8

V

 

 

 

VO2

Output Voltage

 

VSET = NC, No Load

 

10.8

 

12.0

13.2

V

 

 

 

VO3

 

 

 

VSET = AVDD, No Load

 

16

 

17.5

19

V

 

 

 

CL

Current Limit

 

Average Input Current

 

 

 

1.0

 

A

 

 

 

RLS

Low Side MOSFET RDS(ON)

IO = 50mA

 

 

 

0.5

 

 

 

 

fOSCB

Boost Switching Frequency

 

 

 

1.1

 

1.5

1.9

MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Class-D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

fOSCD

Class-D Amplifier Switching Frequency

Input AC-GND

 

225

 

375

475

KHz

 

 

 

CMRR

Common Mode Reject Ratio

VIN = ±100mV, VDD = 3.6V

 

 

 

60

 

dB

 

 

 

VOS

Output Offset Voltage

 

Output Offset Voltage

 

 

 

5

50

mV

 

 

 

RP

RDS(ON)

 

High Side

 

 

 

1.5

 

 

 

 

 

Low Side

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AV1

 

 

 

GSET = AVDD, VO = 1VRMS

 

 

 

32.5

 

 

 

 

 

AV2

Closed-Loop Voltage Gain

GSET = AVDD, VO = 1VRMS

 

 

 

26

 

dB

 

 

 

AV3

 

 

 

GSET = AVDD, VO = 1VRMS

 

 

 

21

 

 

 

 

 

PSRR

Power Supply Reject Ratio

200m VPP Supply Ripple @ 217Hz

 

 

 

70

 

dB

 

 

 

THD+N

Total Harmonice Distortion Plus Noise

VO = 5VRMS

 

 

 

0.3

 

%

 

 

 

SNR

Signal to Noise Ratio

 

Input AC Ground, A-Weighting

 

 

 

90

 

dB

 

 

 

PAM8902H

 

4 of 12

 

 

 

 

December 2012

 

Document number: DSxxxxx Rev. 1 - 0

 

www.diodes.com

 

 

 

 

© Diodes Incorporated

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