DIODES AP63200, AP63201, AP63203, AP63205 User Manual

0 (0)
AP63200/AP63201/AP63203/AP63205
1
2
3 4
5
6
FB
EN
VIN GND
SW
BST
TSOT26
TOP VIEW
3.8V TO 32V INPUT, 2A LOW IQ SYNCHRONOUS BUCK WITH ENHANCED EMI REDUCTION

Description

The AP63200/AP63201/AP63203/AP63205 buck converter with a wide input voltage fully integrates a 125mΩ high-side power MOSFET and a 68mΩ low­side power MOSFET to provide high-efficiency step­conversion.
The AP63200/AP63201/AP63203/AP63205 device is

Pin Assignments

current mode control along with its integrated compensation network.
Electromagnetic Interference (EMI) reduc
±6%, which one frequency for a significant period of time. gate driver scheme to resist switching node ringing MOSFET turn-on and turn-off times, which further erases high­frequency radiated EMI noise caused by MOSFET switching.
The device is available in a low-profile, TSOT26 package.

Features

VIN 3.8V to 32V
2A Continuous Output Current
0.8V ± 1% Reference Voltage
22µA Ultralow Quiescent Current
Switching Frequency
o 500kHz: AP63200 and AP63201 o 1.1MHz: AP63203 and AP63205
Pulse Width Modulation (PWM) Regardless of Output Load
o AP63201
Supports Pulse Frequency Modulation (PFM)
o AP63200, AP63203, and AP63205 o Up to 80% Efficiency at 1mA Light Load o Up to 88% Efficiency at 5mA Light Load
Fixed Output Voltage
o 3.3V: AP63203 o 5.0V: AP63205
Proprietary Gate Driver Design for Best EMI Reduction
Frequency Spread Spectrum (FSS) to Reduce EMI
Precision Enable Threshold to Adjus t UVLO
Protection Circuitry
o Overvoltage Protection o Cycle-by-Cycle Peak Current Limit o Thermal Shutdown
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

12V and 24V Distributed Power Bus Supplies
Flat Screen TV Sets and Monitors
Power Tools and Laser Printers
White Goods and Small Home Appliances
FPGA, DSP, and ASIC Supplies
Home Audio
Network Systems
Set Top Boxes
Gaming Consoles
Consumer Electronics
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
Lead-free. <1000ppm antimony compounds.
AP63200/AP63201/AP63203/AP63205
Document number: DS41326 Rev. 2 - 2
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AP63200/AP63201/AP63203/AP63205
AP63205
L
4.7µH
C3
100nF
C2
2x22μF
C1
10μF
3
VIN
2
EN
5
SW
6
BST
1
FB
4
GND
OUTPUT
V
OUT
5V
INPUT
Feedback sensing terminal for the output voltage. Connect this pin to the resistive divider of the output.
Setting the Output Voltage
programing the UVLO. See Enable section for more details.
Power Input. VIN suppli es the power to the IC, as well as the step-down converter switches. Drive VIN wi th a switching of the IC. See Input Capacitor section for more details.
4
GND
Power Ground.
Power Switching Output. SW is the switching node that supplies power to the output. Connect the output LC filter from SW to the output load. Note that a capacitor is required from SW to BST to power the high-side switch.
High-Side Gate Drive Boost Input. BST supplies the drive for the high-side N-Channel MOSFET. A 100nF
Typical Application Circuit
Figure 1. Typical Application Circuit
Figure 2. Efficiency vs. Output Current
Pin Descriptions
Pin Number Pin Name Function
1 FB
2 EN
AP63200/AP63201/AP63203/AP63205
Document number: DS41326 Rev. 2 - 2
3 VIN
5 SW
6 BST
See
section for more details.
Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the regulator and low to turn it off. Attach to VIN or leave open f or automatic startup. The EN has a precision threshold of 1.18V f or
3.8V to 32V power source. Bypass VIN t o GND with a suitably large capacitor to eliminate noise due to the
capacitor is recommended from SW to BST to power the high-side switch.
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AP63200/AP63201/AP63203/AP63205
0.4V
0.8V
1.1V
+
-
+
-
-
+
0.6V
+
0.8V
Inte rna l SS
Error
Amplifier
PWM
Comparator
Oscillator
+
Logic
-
+
Ref
OCP
7.6nF
18k
SE = 0.84V/T
RT = 0.2V/A
UVP
Q1
Q2
1
2
EN
FB
4
GND
5
SW
6
BST
3
VIN
gm
20k
+
-
Internal
Reference
VCC
Regulator
ON
1.18V
1.5µA 4µA
VSUM
COMP
CSA
Functional Block Diagram
AP63200/AP63201/AP63203/AP63205
Document number: DS41326 Rev. 2 - 2
Figure 3. Functional Block Diagram
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AP63200/AP63201/AP63203/AP63205
Symbol
Parameter
Rating
Unit
IN
BST
SW
SW
Feedback Voltage
-0.3V to +6.0
V
VEN
Enable/UVLO Voltage
-0.3V to +35.0
V
TST
TJ
TL
Lead Temperature
+260
°C
ESD Susceptibility (Note 5)
HBM
Human Body Mode
2000
V
CDM
Charge Device Model
1000
V
Symbol
Parameter
Rating
Unit
θ
JA
θ
JC
Symbol
Parameter
Min
Max
Unit
3.8
Operating Ambient Temperature Range
-40
+85
°C
Absolute Maximum Ratings (Note 4) (@T
= +25°C, unless otherwise specified.)
A
VIN
VSW V
Supply Voltage
Switch Node Voltage
Bootstrap Voltage
-0.3 to +35.0 (DC) V
-0.3 to +40.0 (400ms) V
V
-1.0 to V
- 0.3 to V
+ 0.3
+ 6.0
V V
VFB
Storage Temperature -65 to +150 °C
Junction Temperature +160 °C
Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Thermal Resistance (Note 6)
Junction to Ambient TSOT26 89 °C/W
Junction to Case TSOT26 39 °C/W
Note: 6. Test condition for TSOT26: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions (Note 7) (@T
= +25°C, unless otherwise specified.)
A
VIN
TA
Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
AP63200/AP63201/AP63203/AP63205
Document number: DS41326 Rev. 2 - 2
Supply Voltage
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32 V
January 2019
© Diodes Incorporated
AP63200/AP63201/AP63203/AP63205
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
SHDN
Shutdown Supply Current
VEN = 0V
— 1 3
µA
AP63201: VEN = OPEN, VFB = 1.0V
AP63200/AP63203/AP63205:
IN
R
DS(ON)1
High-Side Switch On-Resistance (Note 8)
— — 125 — m
R
DS(ON)2
I
PEAK_LIMIT
I
VALLEY_LIMIT
AP63200/AP63201
500 — kHz
AP63203/AP63205
1100 — kHz
FSS
Frequency Spread Spectrum
— — ±6 — %
tON
CCM, AP63200/AP63201
792
800
808
mV
CCM, AP63203
3.27
3.30
3.33
V
CCM, AP63205
4.95
5.00
5.05
V
V
EN_H
V
EN_L
VEN = 1.5V
VEN = 1V
1.5 — μA
tSS
Soft-Start Period
— — 4 — ms
HYS
Electrical Characteristics (T
ambient temperature range, -40°C to +85°C, and input voltage range, 3.8V to 32V).
IQ
UVLO
Supply Current (Quiescent)
V
Under Voltage Threshold (Rising)
VIN Under Voltage Threshold Hysteresis
Low-Side Switch On-Resistance (Note 8) — 68 m HS Peak Current Limit (Note 8) 2.5 2.8 3.1 A LS Valley Current Limit (Note 8) 2.5 3.2 3.9 A
= +25°C, VIN = 12V, unless otherwise specified. Min/Max limits apply across the recommended
A
VEN = OPEN, VFB = 1.0V — 3.30 3.50 3.70 V — 440 mV
258 µA
22 µA
fSW
Oscillator Frequency
Minimum On Time 80 ns
VFB
Feedback Voltage
EN Logic High 1.15 1.18 1.23 V EN Logic Low 1.05 1.10 1.15 V
IEN
TSD
T
Note: 8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design.
EN Input Current
Thermal Shutdown (Note 8) +160 °C Thermal Hysteresis (Note 8) +25 °C
5.5 μA
AP63200/AP63201/AP63203/AP63205
Document number: DS41326 Rev. 2 - 2
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AP63200/AP63201/AP63203/AP63205
Figure 4. Efficiency vs. Output Current, VIN = 12V
Figure 5. Efficiency vs. Output Current, VIN = 24V
Figure 6. Load Regulation, VOUT = 5V
Figure 7. Line Regulation, VOUT = 5V
Figure 8. Feedback Voltage vs. Temperature
Figure 9. Power Switch R
vs. Temperature
Typical Performance Characteristics (AP63200 @T
= +25°C, VIN = 12V, V
A
= 5V, unless otherwise specified.)
OUT
AP63200/AP63201/AP63203/AP63205
Document number: DS41326 Rev. 2 - 2
www.diodes.com
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DS(ON)
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