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AP2281 |
Green |
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SINGLE SLEW RATE CONTROLLED LOAD SWITCH
Description
The AP2281 slew rate controlled load switch is a single P-channel MOSFET power switch designed for high-side load-switching applications. The MOSFET has a typical RDS(ON) of 80m at 5V, allowing increased load current handling capacity with a low forward voltage drop. The turn-on slew rate of the device is controlled internally.
The AP2281 load switch is designed to operate from 1.5V to 6V, making it ideal for 1.8V, 2.5V, 3.3V, and 5V systems. The typical quiescent supply current is only 0.01µA.
Features
Wide input voltage range: 1.5V – 6V
Low RDS(ON): 80mΩ typical @ 5V
Turn-on slew rate controlled
AP2281-1: 1ms turn-on rise time
AP2281-3: 100µs turn-on rise time with internal discharge
Very low turn-on quiescent current: << 1µA
Fast load discharge option
Temperature range -40°C to +85°C
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Smart Phones
PDA
Cell Phones
GPS Navigators
PMP/MP4
Notebook and Pocket PC
Pin Assignments
( Top View )
IN |
1 |
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6 |
OUT |
IN |
2 |
7 |
5 |
OUT |
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EN |
3 |
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4 |
GND |
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U-DFN2018-6 |
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(Top View) |
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OUT |
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IN |
1 |
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6 |
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GND |
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GND |
2 |
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5 |
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EN |
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IN |
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4 |
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SOT26 |
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Notes: |
1. |
EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. |
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2. |
See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogenand Antimony-free, "Green" |
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and Lead-free. |
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3. |
Halogenand Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and |
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<1000ppm antimony compounds. |
Typical Applications Circuit
VIN |
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V |
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OUT |
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IN |
OUT |
1uF |
Enable |
0.1uF |
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EN |
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GND |
AP2281 |
1 of 11 |
November 2013 |
Document number: DS31359 Rev. 7 - 2 |
www.diodes.com |
© Diodes Incorporated |
AP2281
Pin Descriptions
Pin Name |
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Pin Number |
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SOT26 |
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U-DFN2018-6 |
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OUT |
1 |
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5, 6 |
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GND |
2, 5 |
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4 |
EN |
3 |
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IN |
4, 6 |
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1, 2 |
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PAD |
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7 |
Function
Voltage output pin. This is the pin to the P-channel MOSFET drain connection. Bypass to ground through a 0.1uF capacitor.
Ground.
Enable input, active high
Voltage input pin. This is the pin to the P-channel MOSFET source. Bypass to ground through a 1µF capacitor.
Thermal pad. Suggest connecting to ground plane to get better heat dissipation.
Options
Part Number |
Slew Rate (typ) |
Active Pull Down |
Enable |
AP2281-1 |
1ms |
No |
Active High |
AP2281-3 |
100µs |
Yes |
Active High |
Functional Block Diagram
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AP2281 |
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2 of 11 |
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November 2013 |
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Document number: DS31359 Rev. 7 - 2 |
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www.diodes.com |
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© Diodes Incorporated |
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AP2281
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
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Symbol |
Parameter |
Ratings |
Unit |
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ESD HBM |
Human Body Model ESD Protection |
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5 |
KV |
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ESD MM |
Machine Model ESD Protection |
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SOT26 |
500 |
V |
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U-DFN2018-6 |
450 |
V |
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VIN |
Input Voltage |
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6.5 |
V |
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VOUT |
Output Voltage |
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VIN +0.3 |
V |
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VEN |
Enable Voltage |
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6.5 |
V |
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Iload |
Maximum Continuous Load Current |
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2 |
A |
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TJ |
Operating Junction Temperature Range |
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-40 to +125 |
°C |
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TST |
Storage Temperature Range |
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-65 to +150 |
°C |
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PD |
Power Dissipation |
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SOT26 (Note 4, 5, 6) |
720 |
mW |
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U-DFN2018-6 (Note 4, 5, 7) |
1410 |
mW |
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Notes: |
4. TJ, max = +125°C. |
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5. Ratings apply to ambient temperature at +25°C.
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol |
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Parameter |
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Min |
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Max |
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Unit |
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VIN |
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Input voltage |
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1.5 |
6.0 |
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V |
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IOUT |
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Output Current |
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0 |
2.0 |
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A |
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TA |
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Operating Ambient Temperature |
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-40 |
+85 |
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°C |
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.) |
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Symbol |
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Parameters |
Test Conditions |
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Min |
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Typ |
Max |
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Unit |
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IQ |
Input Quiescent Current |
VEN = VIN, IOUT = 0 |
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0.01 |
1 |
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μA |
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ISHDN |
Input Shutdown Current |
VEN = 0V, OUT open |
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0.01 |
1 |
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μA |
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ILEAK |
Input Leakage Current |
VEN = 0V, OUT grounded |
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— |
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0.01 |
1 |
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μA |
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VIN = 5.0V |
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— |
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80 |
100 |
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mΩ |
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RDS(ON) |
Switch on-resistance |
VIN = 3.3V |
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— |
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95 |
120 |
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mΩ |
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VIN = 1.8V |
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— |
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160 |
210 |
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mΩ |
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VIN = 1.5V |
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— |
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210 |
280 |
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mΩ |
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VIL |
EN Input Logic Low Voltage |
VIN = 1.5V to 6V |
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— |
0.4 |
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V |
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1.5V ≤ VIN ≤ 2.7V |
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1.4 |
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— |
— |
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V |
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VIH |
EN Input Logic High Voltage |
2.7V < VIN < 5.25V |
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1.6 |
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— |
— |
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V |
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VIN ≥ 5.25V |
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1.7 |
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— |
— |
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V |
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ISINK |
EN Input leakage |
VEN = 5V |
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— |
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— |
1 |
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μA |
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TD(ON) |
Output turn-on delay time |
RLOAD = 10Ω |
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1 |
— |
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μS |
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TON |
Output turn-on rise time |
AP2281-1, RLOAD = 10Ω |
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— |
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1000 |
1500 |
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μS |
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AP2281-3, RLOAD = 10Ω |
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100 |
150 |
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μS |
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TD(OFF) |
Output turn-off delay time |
RLOAD = 10Ω |
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0.5 |
1 |
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μS |
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RDISCH |
Discharge FET on-resistance |
For AP2281-3 only, VEN = GND |
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65 |
100 |
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Ω |
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θJA |
Thermal Resistance Junction-to-Ambient |
SOT26 (Note 6) |
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— |
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153 |
— |
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°C/W |
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U-DFN2018-6 (Note 7) |
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78 |
— |
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SOT26 (Note 6) |
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29 |
— |
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θJC |
Thermal Resistance Junction-to-case |
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°C/W |
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U-DFN2018-6 (Note 7) |
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19 |
— |
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Notes: 6. Test condition for SOT26: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7.Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom layer 1.0"x1.4" ground plane.
AP2281 |
3 of 11 |
November 2013 |
Document number: DS31359 Rev. 7 - 2 |
www.diodes.com |
© Diodes Incorporated |
AP2281
Typical Performance Characteristics
Quiescent Current ( A)
Quiescent Current vs. Input Voltage
0.01
0.008
0.006
0.004
0.002
0
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
6.0 |
Input Voltage (V)
Qu iescen t C u rren t ( A )
0.010
0.008
0.006
0.004
0.002
0.000 -50
Quiescent Current vs. Temperature
VIN=1.8V
VIN=3.3V
VIN=5.0V
-25 |
0 |
25 |
50 |
75 |
100 |
125 |
Temperature (°C)
RDS(ON) vs. Input Voltage |
RDS(ON) vs. Temperature |
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300.00 |
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200.00 |
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I=100mA |
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180.00 |
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250.00 |
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I=500mA |
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160.00 |
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I=1A |
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) |
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140.00 |
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I=2A |
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200.00 |
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120.00 |
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N)(m |
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N)(m |
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100.00 |
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RDS(O |
150.00 |
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RDS(O |
80.00 |
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60.00 |
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VIN =1.8V |
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100.00 |
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40.00 |
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VIN =3.3V |
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20.00 |
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VIN =5V |
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50.00 |
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0.00 |
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1.5 |
2 |
2.5 |
3 |
3.5 |
4 |
4.5 |
5 |
5.5 |
6 |
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-50 |
-25 |
0 |
25 |
50 |
75 |
100 |
Input Voltage (V) |
Temperature (°C) |
ENABLE Threshold vs. Input Voltage |
Input Shutdown Current vs. Temperature |
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1.8 |
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1.6 |
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0.010 |
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) |
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(V |
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0.008 |
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ld |
1.4 |
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sh o |
1.2 |
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A) |
0.006 |
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T h re |
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D N ( |
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1.0 |
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0.004 |
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F F |
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IS H |
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N /O |
0.8 |
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VIL (V) |
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O |
0.6 |
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VIH (V) |
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0.000 |
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0.4 |
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-50 |
-25 |
0 |
25 |
50 |
75 |
100 |
125 |
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1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
4.0 |
4.5 |
5.0 |
5.5 |
6.0 |
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Temperature (°C) |
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Input Voltage (V) |
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AP2281 |
4 of 11 |
November 2013 |
Document number: DS31359 Rev. 7 - 2 |
www.diodes.com |
© Diodes Incorporated |
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