DIODES MBR850, MBR835, MBR840, MBR860, MBR845 Datasheet

MBR830 - MBR860

8.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application

Plastic Material: UL Flammability Classification Rating 94V-0

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

Mounting Position: Any

Marking: Type Number

																																									TO-220AC
																													L											Dim	Min		Max
										B																										M				A	14.22		15.88
	C																																							B	9.65		10.67
																	D
																																								C	2.54		3.43
K
																																				A				D	5.84		6.86
																																								E			6.35
					1						2																													G	12.70		14.73
																	E																							J	0.51		1.14
				J																		N														G				K	3.53		4.09
																																								L	3.56		4.83
										R																														M	1.14		1.40
																																								N	0.30		0.64
																															P
											Pin 1															Case														P	2.03		2.92
											Pin 2
																																								R	4.83		5.33
																																								All Dimensions in mm

Maximum Ratings and Electrical Characteristics

@ TA = 25 C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

MBR

MBR

MBR

MBR

MBR

Unit

830

835

840

845

850

860

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

30

35

40

45

50

60

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

IO

8.0

A

(Note 1)

@ TC = 125 C

Non-Repetitive Peak Forward Surge Current

IFSM

8.3ms single half sine-wave superimposed on rated load

150

A

(JEDEC Method)

Repetitive Peak Reverse Surge Current

@ t 2.0 s

IRRM

1.0

A

Forward Voltage Drop

@ IF = 8.0A, TC = 125 C

VFM

0.57

0.70

@ IF = 8.0A, TC =

25 C

0.70

0.80

V

@ IF = 16A, TC =

25 C

0.84

0.95

Peak Reverse Current

@ TC =

25 C

IRM

0.1

mA

at Rated DC Blocking Voltage

@ TC = 125 C

15

Typical Junction Capacitance (Note 2)

Cj

250

pF

Typical Thermal Resistance Junction to Case (Note 1)

R JC

3.0

K/W

Voltage Rate of Change (Rated VR)

dV/dt

1000

V/ s

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

C

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS30030 Rev. B-4

1 of 2

MBR830-MBR860