Samsung M393AAG40M32-CAE User Manual

Rev. 1.0, Feb. 2019

M393AAG40M3B

288pin Registered DIMM based on 16Gb M-die

78FBGA with Lead-Free & Halogen-Free (RoHS compliant)

datasheet

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- 1 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

Revision History

Revision No.	History	Draft Date	Remark	Editor
0.0	- First version for target specification.	21st Sep, 2018	Target	T.Y.Lee
				J.Y.Bae
1.0	- Final datasheet.	21st Feb, 2019	Final	T.Y.Lee
	- Update IDD table			J.Y.Bae

1. Update IDD and IPP values.

2. Remove symbol IDD5B2, IDD5F3, IDD5F5, IPP5B2, IPP5F3 and IPP5F5.

- Update Speed bins table.

- Add Timings used for IDD, IPP and IDDQ Measurement-Loop Patterns table.

- Update Basic IDD, IPP and IDDQ Measurement Conditions table. 1. Correct typo.

2. Remove IDD4RB/IDDQ4RB/IDD4WB.

3. Add IDD5B2/IPP5B2/IDD5F3/IPP5F3/IDD5F5/IPP5F5 parameters.

- Update DDR4-2933 Speed Bins and Operations table. - Correct CAS latency in Key features.

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

Table Of Contents

288pin Registered DIMM based on 16Gb M-die

1. DDR4 REGISTERED DIMM ORDERING INFORMATION ..................................................................................................................		5
2. KEY FEATURES ..................................................................................................................................................................................		5
3. ADDRESS CONFIGURATION .............................................................................................................................................................		5
4. REGISTERED DIMM PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)......................................................................................		6
5. PIN DESCRIPTION .............................................................................................................................................................................		7
6. ON DIMM THERMAL SENSOR ...........................................................................................................................................................		8
7. INPUT/OUTPUT FUNCTIONAL DESCRIPTION .................................................................................................................................		9
8. REGISTERING CLOCK DRIVER SPECIFICATION ............................................................................................................................		11
8.1 Timing & Capacitance values .........................................................................................................................................................		11
8.2 Clock driver Characteristics ............................................................................................................................................................		11
9. FUNCTION BLOCK DIAGRAM: ...........................................................................................................................................................		12
9.1 128GB, 16Gx72 Module .................................................................................................................................................................		12
9.1.1. (PC4-RDIMM Populated as 2 physical ranks / 2 logical ranks of x4 DDR4 SDRAMs) ...........................................................		12
10. ABSOLUTE MAXIMUM RATINGS .....................................................................................................................................................		15
11. AC & DC OPERATING CONDITIONS ...............................................................................................................................................		15
12. AC & DC INPUT MEASUREMENT LEVELS......................................................................................................................................		16
12.1	AC & DC Logic Input Levels for Single-Ended Signals.................................................................................................................	16
12.2	AC and DC Input Measurement Levels: VREF Tolerances..........................................................................................................	16
12.3	AC and DC Logic Input Levels for Differential Signals .................................................................................................................	17
12.3.1. Differential Signals Definition ................................................................................................................................................		17
12.3.2. Differential Swing Requirements for Clock (CK_t - CK_c) ....................................................................................................		17
12.3.3. Single-ended Requirements for Differential Signals .............................................................................................................		18
12.3.4. Address, Command and Control Overshoot and Undershoot specifications........................................................................		19
12.3.5. Clock Overshoot and Undershoot Specifications..................................................................................................................		20
12.3.6. Data, Strobe and Mask Overshoot and Undershoot Specifications......................................................................................		21
12.4	Slew Rate Definitions....................................................................................................................................................................	22
12.4.1. Slew Rate Definitions for Differential Input Signals (CK) ......................................................................................................		22
12.4.2. Slew Rate Definition for Single-ended Input Signals (CMD/ADD) ........................................................................................		23
12.5	Differential Input Cross Point Voltage...........................................................................................................................................	24
12.6	CMOS rail to rail Input Levels .......................................................................................................................................................	25
12.6.1. CMOS rail to rail Input Levels for RESET_n .........................................................................................................................		25
12.7	AC and DC Logic Input Levels for DQS Signals...........................................................................................................................	26
12.7.1. Differential signal definition ...................................................................................................................................................		26
12.7.2. Differential swing requirements for DQS (DQS_t - DQS_c)..................................................................................................		26
12.7.3. Peak voltage calculation method ..........................................................................................................................................		27
12.7.4. Differential Input Cross Point Voltage ...................................................................................................................................		28
12.7.5. Differential Input Slew Rate Definition ..................................................................................................................................		29
13. AC AND DC OUTPUT MEASUREMENT LEVELS ............................................................................................................................		30
13.1	Output Driver DC Electrical Characteristics..................................................................................................................................	30
13.1.1. Output Driver Temperature and Voltage Sensitivity..............................................................................................................		32
13.1.2. Alert_n output Drive Characteristic .......................................................................................................................................		32
13.1.3. Output Driver Characteristic of Connectivity Test (CT) Mode...............................................................................................		33
13.2	Single-ended AC & DC Output Levels..........................................................................................................................................	34
13.3	Differential AC & DC Output Levels..............................................................................................................................................	34
13.4	Single-ended Output Slew Rate ...................................................................................................................................................	35
13.5	Differential Output Slew Rate .......................................................................................................................................................	36
13.6	Single-ended AC & DC Output Levels of Connectivity Test Mode ...............................................................................................	37
13.7	Test Load for Connectivity Test Mode Timing ..............................................................................................................................	38
14. IDD AND IDDQ SPECIFICATION PARAMETERS AND TEST CONDITIONS ..................................................................................		39
14.1	IDD, IPP and IDDQ Measurement Conditions..............................................................................................................................	39
15. DIMM IDD SPECIFICATION DEFINITION.........................................................................................................................................		42
16. IDD TABLE .........................................................................................................................................................................................		55
17. INPUT/OUTPUT CAPACITANCE ......................................................................................................................................................		57
18. ELECTRICAL CHARACTERISTICS & AC TIMINGS FOR DDR4-1600-3DS TO DDR4-2933-3DS ..................................................		58
18.1	Refresh parameters ......................................................................................................................................................................	58
18.2	Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding bin.........................................................................................	60
18.3	Speed Bin Table Note...................................................................................................................................................................	65
19. ELECTRICAL CHARACTERISTICS & AC TIMING ...........................................................................................................................		66
19.1	Reference Load for AC Timing and Output Slew Rate .................................................................................................................	66
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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

19.2 tREFI.............................................................................................................................................................................................		66
19.3	Clock Specification .......................................................................................................................................................................	67
19.3.1. Definition for tCK(abs)...........................................................................................................................................................		67
19.3.2. Definition for tCK(avg)...........................................................................................................................................................		67
19.3.3. Definition for tCH(avg) and tCL(avg)....................................................................................................................................		67
19.3.4. Definition for tERR(nper).......................................................................................................................................................		67
20. TIMING PARAMETERS BY SPEED GRADE ....................................................................................................................................		68
20.1	Rounding Algorithms ...................................................................................................................................................................	74
20.2	The DQ input receiver compliance mask for voltage and timing ..................................................................................................	75
20.3	Command, Control, and Address Setup, Hold, and Derating .......................................................................................................	79
20.4	DDR4 Function Matrix ..................................................................................................................................................................	81
21. PHYSICAL DIMENSIONS ..................................................................................................................................................................		83
21.1	8Gbx4(3DS 2H) based 16Gx72 Module (M393AAG40M3B)........................................................................................................	83
21.1.1. x72 DIMM, populated as 2 physical ranks / 2 logical ranks of x4 DDR4 SDRAMs...............................................................		83
21.1.2. ..............................................................................................................................................................................................		83
22. PRODUCT REGULATORY COMPLIANCE .......................................................................................................................................		84
22.1	Product Regulatory Compliance And Certifications......................................................................................................................	84

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

1. DDR4 REGISTERED DIMM ORDERING INFORMATION

[Table 1] Ordering Information Table

Part Number	Density	Organization	Component Composition	Number of Rank	Height
M393AAG40M3B-CYF	128GB	16Gx72	3DS 2H 8Gx4 (K4ABG45WM-3C##)*36	4	31.25mm
				(2 physical ranks / 2 logical ranks)

NOTE :

1)"##" - YF

2)RB(2133Mbps 17-15-15)/TC(2400Mbps 19-17-17) /WD(2666Mbps 22-19-19)

- DDR4-2666(22-19-19) is backward compatible to DDR4-2400(19-17-17) and DDR4-2133(17-15-15) YF(2933Mbps 24-21-21)

- DDR4-2933(24-21-21) is backward compatible to DDR4-2666(22-19-19), DDR4-2400(19-17-17) and DDR4-2133(17-15-15).

2. KEY FEATURES

[Table 2] Speed bins

	Speed	DDR4-2133	DDR4-2400	DDR4-2666	DDR-2933	Unit
		17-15-15	19-17-17	22-19-19	24-21-21
	tCK	0.937	0.833	0.750	0.682	ns
	CAS Latency	17	19	22	24	nCK
	tRCD	14.06	14.16	14.25	14.32	ns
	tRP	14.06	14.16	14.25	14.32	ns
	tRAS	33	32	32	32	ns
	tRC	47.06	46.16	46.25	46.32	ns

•JEDEC standard 1.2V ± 0.06V Power Supply

•VDDQ = 1.2V ± 0.06V

•800 MHz fCK for 1600Mb/sec/pin,933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin,1333MHz fCK for 2666Mb/sec/pin, 1467MHz fCK for 2933Mb/sec/pin.

•16 Banks (4 Bank Groups)

•Programmable CAS Latency: 11,12,13,14,15,16,17,18,20,22,24,25

•Programmable Additive Latency (Posted CAS): CL - 2 or CL - 1 clock

•Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,11,12 (DDR4-1866), 11,14 (DDR4-2133), 12,16 (DDR4-2400), 14,18 (DDR42666) and 16, 20 (DDR4-2933)

•Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]

•Bi-directional Differential Data Strobe

•On Die Termination using ODT pin

•Average Refresh Period 7.8us at lower then TCASE 85 C, 3.9us at 85 C < TCASE 95 C

•Asynchronous Reset

3. ADDRESS CONFIGURATION

Organization	Row Address	Column Address	Bank Address	Auto Precharge
8Gx4(32Gb 3DS 2H) based Module	A0-A17	A0-A9	BA0-BA1	A10/AP

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

4. REGISTERED DIMM PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)

Pin	Front	Pin	Back	Pin	Front		Pin	Back	Pin	Front	Pin	Back	Pin	Front	Pin	Back
1	12V3),NC	145	12V3),NC	40	TDQS12_t,		184	VSS	78	EVENT_n	222	PARITY	117	DQ52	261	VSS
					DQS12_t
2	VSS	146	VREFCA	41	TDQS12_c,		185	DQS3_c	79	A0	223	VDD	118	VSS	262	DQ53
					DQS12_c
3	DQ4	147	VSS	42	VSS		186	DQS3_t	80	VDD	224	BA1	119	DQ48	263	VSS
4	VSS	148	DQ5	43	DQ30		187	VSS	81	BA0	225	A10/AP	120	VSS	264	DQ49
5	DQ0	149	VSS	44	VSS		188	DQ31	82	RAS_n/A16	226	VDD	121	TDQS15_t,	265	VSS
														DQS15_t
6	VSS	150	DQ1	45	DQ26		189	VSS	83	VDD	227	RFU	122	TDQS15_c,	266	DQS6_c
														DQS15_c
7	TDQS9_t,	151	VSS	46	VSS		190	DQ27	84	S0_n	228	WE_n/A14	123	VSS	267	DQS6_t
	DQS9_t
8	TDQS9_c,	152	DQS0_c	47	CB4		191	VSS	85	VDD	229	VDD	124	DQ54	268	VSS
	DQS9_c
9	VSS	153	DQS0_t	48	VSS		192	CB5	86	CAS_n/A15	230	NC	125	VSS	269	DQ55
10	DQ6	154	VSS	49	CB0		193	VSS	87	ODT0	231	VDD	126	DQ50	270	VSS
11	VSS	155	DQ7	50	VSS		194	CB1	88	VDD	232	A13	127	VSS	271	DQ51
12	DQ2	156	VSS	51	TDQS17_t,		195	VSS	89	S1_n	233	VDD	128	DQ60	272	VSS
					DQS17_t
13	VSS	157	DQ3	52	TDQS17_c,		196	DQS8_c	90	VDD	234	A17	129	VSS	273	DQ61
					DQS17_c
14	DQ12	158	VSS	53	VSS		197	DQS8_t	91	ODT1	235	NC,C2	130	DQ56	274	VSS
15	VSS	159	DQ13	54	CB6		198	VSS	92	VDD	236	VDD	131	VSS	275	DQ57
16	DQ8	160	VSS	55	VSS		199	CB7	93	C0,CS2_n,NC	237	NC,CS3_c,C1	132	TDQS16_t,	276	VSS
														DQS16_t
17	VSS	161	DQ9	56	CB2		200	VSS	94	VSS	238	SA2	133	TDQS16_c,	277	DQS7_c
														DQS16_c
18	TDQS10_t,	162	VSS	57	VSS		201	CB3	95	DQ36	239	VSS	134	VSS	278	DQS7_t
	DQS10_t
19	TDQS10_c,	163	DQS1_c	58	RESET_n		202	VSS	96	VSS	240	DQ37	135	DQ62	279	VSS
	DQS10_c
20	VSS	164	DQS1_t	59	VDD		203	CKE1	97	DQ32	241	VSS	136	VSS	280	DQ63
21	DQ14	165	VSS	60	CKE0		204	VDD	98	VSS	242	DQ33	137	DQ58	281	VSS
22	VSS	166	DQ15	61	VDD		205	RFU	99	TDQS13_t,	243	VSS	138	VSS	282	DQ59
										DQS13_t
23	DQ10	167	VSS	62	ACT_n		206	VDD	100	TDQS13_c,	244	DQS4_c	139	SA0	283	VSS
										DQS13_c
24	VSS	168	DQ11	63	BG0		207	BG1	101	VSS	245	DQS4_t	140	SA1	284	VDDSPD
25	DQ20	169	VSS	64	VDD		208	ALERT_n	102	DQ38	246	VSS	141	SCL	285	SDA
26	VSS	170	DQ21	65	A12/BC_n		209	VDD	103	VSS	247	DQ39	142	VPP	286	VPP
27	DQ16	171	VSS	66	A9		210	A11	104	DQ34	248	VSS	143	VPP	287	VPP
28	VSS	172	DQ17	67	VDD		211	A7	105	VSS	249	DQ35	144	RFU	288	VPP4)
29	TDQS11_t,	173	VSS	68	A8		212	VDD	106	DQ44	250	VSS
	DQS11_t
30	TDQS11_c,	174	DQS2_c	69	A6		213	A5	107	VSS	251	DQ45
	DQS11_c
31	VSS	175	DQS2_t	70	VDD		214	A4	108	DQ40	252	VSS
32	DQ22	176	VSS	71	A3		215	VDD	109	VSS	253	DQ41
33	VSS	177	DQ23	72	A1		216	A2	110	TDQS14_t,	254	VSS
										DQS14_t
34	DQ18	178	VSS	73	VDD		217	VDD	111	TDQS14_c,	255	DQS5_c
										DQS14_c
35	VSS	179	DQ19	74	CK0_t		218	CK1_t	112	VSS	256	DQS5_t
36	DQ28	180	VSS	75	CK0_c		219	CK1_c	113	DQ46	257	VSS
37	VSS	181	DQ29	76	VDD		220	VDD	114	VSS	258	DQ47
38	DQ24	182	VSS	77	VTT		221	VTT	115	DQ42	259	VSS
39	VSS	183	DQ25		KEY				116	VSS	260	DQ43

NOTE:

1)VPP is 2.5V DC

2)Pin 230 is defined as NC for UDIMMs, RDIMMs and LRDIMMs. Pin 230 is defined as SAVE_n for NVDIMMs.

3)Pins 1 and 145 are defined as NC for UDIMMs, RDIMMs and LRDIMMs. Pins 1 and 145 are defined as 12V for Hybrid /NVDIMM

4)The 5th VPP is required on all modules. DIMMs.

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

5. PIN DESCRIPTION

	Pin Name	Description
	A0-A171)	Register address input
	BA0, BA1	Register bank select input
	BG0, BG1	Register bank group select input
	RAS_n2)	Register row address strobe input
	CAS_n3)	Register column address strobe input
	WE_n4)	Register write enable input
	CS0_n, CS1_n,	DIMM Rank Select Lines input
	CS2_n, CS3_n
	CKE0, CKE1	Register clock enable lines input
	ODT0, ODT1	Register on-die termination control lines input
	ACT_n	Register input for activate input
	DQ0–DQ63	DIMM memory data bus
	CB0–CB7	DIMM ECC check bits
	DQS0_t-DQS17_t	Data Buffer data strobes
		(positive line of differential pair)
	DQS0_c-	Data Buffer data strobes
	DQS17_c	(negative line of differential pair)
	CK0_t, CK1_t	Register clock input
		(positive line of differential pair)
	CK0_c, CK1_c	Register clocks input
		(negative line of differential pair)

NOTE :

1)Address A17 is only valid for 16 Gb x4 based SDRAMs.

2)RAS_n is a multiplexed function with A16.

3)CAS_n is a multiplexed function with A15.

4)WE_n is a multiplexed function with A14.

Pin Name	Description
SCL	I2C serial bus clock for SPD/TS and register
SDA	I2C serial bus data line for SPD/TS and register
SA0-SA2	I2C slave address select for SPD/TS and register
PAR	Register parity input
VDD	SDRAM core power supply
VPP	SDRAM activating power supply
VREFCA	SDRAM command/address reference supply
VSS	Power supply return (ground)
VDDSPD	Serial SPD/TS positive power supply
ALERT_n	Register ALERT_n output
RESET_n	Set Register and SDRAMs to a Known State
EVENT_n	SPD signals a thermal event has occurred
VTT	SDRAM I/O termination supply
RFU	Reserved for future use

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

6. ON DIMM THERMAL SENSOR

SA2

SA1
SA0			1K
SA0	SA1	SA2	SA0	SA1	SA2

SCL

SCL

SCL

SDA

SDA

SDA

EVENT_n

EVENT_n

ZQCAL

VSS

Serial PD with

Register

Thermal sensor

NOTE :

1) All Samsung RDIMM support Thermal sensor on DIMM

[ Table 3 ] Temperature Sensor Characteristics

Grade

Range

Temperature Sensor Accuracy

Units

NOTE

Min.

Typ.

Max.

75 < Ta < 95

-

+/- 0.5

+/- 1.0

-

B

C

40 < Ta < 125

-

+/- 1.0

+/- 2.0

-

-20 < Ta < 125

-

+/- 2.0

+/- 3.0

-

Resolution

0.25

C /LSB

-

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

7. INPUT/OUTPUT FUNCTIONAL DESCRIPTION

[ Table 4 ] Input/Output Function Description

	Symbol	Type	Function
	CK_t, CK_c	Input	Clock: CK_t and CK_c are differential clock inputs. All address and control input signals are sampled on the crossing
			of the positive edge of CK_t and negative edge of CK_c.
			Clock Enable: CKE HIGH activates and CKE LOW deactivates, internal clock signals and device input buffers and
			output drivers. Taking CKE LOW provides Precharge Power-Down and Self-Refresh operation (all banks idle), or
	CKE, (CKE1)	Input	Active Power-Down (row Active in any bank). CKE is synchronous for Self-Refresh exit. After VREFCA and Internal
			DQ Vref have become stable during the power on and initialization sequence, they must be maintained during all
			operations (including Self-Refresh). CKE must be maintained high throughout read and write accesses. Input buffers,
			excluding CK_t, CK_c, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled
			during Self-Refresh.
	CS_n, (CS1_n)	Input	Chip Select: All commands are masked when CS_n is registered HIGH. CS_n provides for external Rank selection on
			systems with multiple Ranks. CS_n is considered part of the command code.
	C0, C1, C2	Input	Chip ID : Chip ID is only used for 3DS for 2,4,8 high stack via TSV to select each slice of stacked component. Chip ID
			is considered part of the command code.
			On Die Termination: ODT (registered HIGH) enables RTT_NOM termination resistance internal to the DDR4 SDRAM.
	ODT, (ODT1)	Input	When enabled, ODT is only applied to each DQ, DQS_t, DQS_c and DM_n/DBI_n/TDQS_t, NU/TDQS_c (When
			TDQS is enabled via Mode Register A11=1 in MR1) signal for x8 configurations. For x16 configuration ODT is applied
			to each DQ, DQSU_t, DQSU_c, DQSL_t, DQSL_c, DMU_n, and DML_n signal. The ODT pin will be ignored if MR1 is
			programmed to disable RTT_NOM.
	ACT_n	Input	Activation Command Input : ACT_n defines the Activation command being entered along with CS_n. The input into
			RAS_n/A16, CAS_n/A15 and WE_n/A14 will be considered as Row Address A16, A15 and A14
	RAS_n/A16		Command Inputs: RAS_n/A16, CAS_n/A15 and WE_n/A14 (along with CS_n) define the command being entered.
		Input	Those pins have multi function. For example, for activation with ACT_n Low, these are Addresses like A16, A15 and
	CAS_n/A15
			A14 but for non-activation command with ACT_n High, these are Command pins for Read, Write and other command
	WE_n/A14
			defined in command truth table
			Input Data Mask and Data Bus Inversion: DM_n is an input mask signal for write data. Input data is masked when
	DM_n/DBI_n/		DM_n is sampled LOW coincident with that input data during a Write access. DM_n is sampled on both edges of
	TDQS_t, (DMU_n/	Input/Output	DQS. DM is muxed with DBI function by Mode Register A10,A11,A12 setting in MR5. For x8 device, the function of
	DBIU_n), (DML_n/		DM or TDQS is enabled by Mode Register A11 setting in MR1. DBI_n is an input/output identifing whether to store/
	DBIL_n)		output the true or inverted data. If DBI_n is LOW, the data will be stored/output after inversion inside the DDR4
			SDRAM and not inverted if DBI_n is HIGH. TDQS is only supported in X8.
	BG0 - BG1	Input	Bank Group Inputs: BG0 - BG1 define to which bank group an Active, Read, Write or Precharge command is being
			applied. BG0 also determines which mode register is to be accessed during a MRS cycle. X4/8 have BG0 and BG1
			but X16 has only BG0.
	BA0 - BA1	Input	Bank Address Inputs: BA0 - BA1 define to which bank an Active, Read, Write or Precharge command is being applied.
			Bank address also determines which mode register is to be accessed during a MRS cycle.
			Address Inputs: Provide the row address for ACTIVATE Commands and the column address for Read/Write
	A0 - A17	Input	commands to select one location out of the memory array in the respective bank. A10/AP, A12/BC_n, RAS_n/A16,
			CAS_n/A15 and WE_n/A14 have additional functions. See other rows. The address inputs also provide the op-code
			during Mode Register Set commands. A17 is only defined for the x4 configuration.
			Auto-precharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be
	A10 / AP	Input	performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW: no Autoprecharge).
			A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or
			all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by bank addresses.
	A12 / BC_n	Input	Burst Chop: A12/BC_n is sampled during Read and Write commands to determine if burst chop (on-the-fly) will be
			performed. (HIGH, no burst chop; LOW: burst chopped). See command truth table for details.
	RESET_n	Input	Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive when RESET_n is HIGH.
			RESET_n must be HIGH during normal operation. RESET_n is a CMOS rail to rail signal with DC high and low at 80%
			and 20% of VDD.
			Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register then CRC code is added at the end of
	DQ	Input/	Data Burst. Any DQ from DQ0-DQ3 may indicate the internal Vref level during test via Mode Register Setting MR4
		Output	A4=High. During this mode, RTT value should be set to Hi-Z. Refer to vendor specific data sheets to determine which
			DQ is used.

- 9 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

[ Table 4 ] Input/Output Function Description

	Symbol	Type	Function
	DQS_t, DQS_c,		Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. For the
		Input/	x16, DQSL corresponds to the data on DQL0-DQL7; DQSU corresponds to the data on DQU0-DQU7. The data strobe
	DQSU_t, DQSU_c,		DQS_t, DQSL_t and DQSU_t are paired with differential signals DQS_c, DQSL_c, and DQSU_c, respectively, to
		Output
	DQSL_t, DQSL_c		provide differential pair signaling to the system during reads and writes. DDR4 SDRAM supports differential data
			strobe only and does not support single-ended.
			Termination Data Strobe: TDQS_t/TDQS_c is applicable for x8 DRAMs only. When enabled via Mode Register A11 =
			1 in MR1, the DRAM will enable the same termination resistance function on TDQS_t/TDQS_c that is applied to
	TDQS_t, TDQS_c	Output	DQS_t/DQS_c. When disabled via mode register A11 = 0 in MR1, DM/DBI/TDQS will provide the data mask function
			or Data Bus Inversion depending on MR5; A11,12,10and TDQS_c is not used. x4/x16 DRAMs must disable the TDQS
			function via mode register A11 = 0 in MR1.
			Command and Address Parity Input: DDR4 Supports Even Parity check in DRAM with MR setting. Once it’s enabled
	PAR	Input	via Register in MR5, then DRAM calculates Parity with ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, BG0-BG1, BA0-
			BA1, A17-A0 and C0-C2 (3DS devices). Command and address inputs shall have parity check performed when
			commands are latched via the rising edge of CK_t and when CS_n is low.
			Alert : It has multi functions such as CRC error flag, Command and Address Parity error flag as Output signal. If there
			is error in CRC, then ALERT_n goes LOW for the period time interval and goes back HIGH. If there is error in
	ALERT_n	Output/	Command Address Parity Check, then ALERT_n goes LOW for relatively long period until on going DRAM internal
		Input	recovery transaction is complete. During Connectivity Test mode this pin works as input.
			Using this signal or not is dependent on system. In case of not connected as Signal, ALERT_n Pin must be bounded
			to VDD on board.
			Connectivity Test Mode Enable : Required on X16 devices and optional input on x4/x8 with densities equal to or
	TEN	Input	greater than 8Gb.HIGH in this pin will enable Connectivity Test Mode operation along with other pins. It is a CMOS rail
			to rail signal with AC high and low at 80% and 20% of VDD. Using this signal or not is dependent on System. This pin
			may be DRAM internally pulled low through a weak pull-down resistor to VSS.
	NC		No Connect: No internal electrical connection is present
	VDDQ	Supply	DQ Power Supply: 1.2V +/- 0.06V
	VSSQ	Supply	DQ Ground
	VDD	Supply	Power Supply: 1.2V ± 0.06V
	VSS	Supply	Ground
	VPP	Supply	DRAM Activating Power Supply: 2.5V (2.375V min, 2.75V max)
	VREFCA	Supply	Reference voltage for CA
	ZQ	Supply	Reference Pin for ZQ calibration

NOTE:

1) Input only pins (BG0-BG1, BA0-BA1, A0-A17, ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, CS_n, CKE, ODT and RESET_n) do not supply termination.

- 10 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

8. REGISTERING CLOCK DRIVER SPECIFICATION

8.1 Timing & Capacitance values

			DDR4-		DDR4-		DDR4-				Note
Symbol	Parameter	Conditions	1600/1866/2133		2400/2666		2933			Units
											s
			Min	Max	Min	Max	Min		Max
fclock	Input Clock Frequency	application frequency	625	1080	625	1350	625		1620	MHz
tCH/tCL	Pulse duration, CK_t, CK_c		0.4	-	0.4	-	0.4		-	tCK
	HIGH or LOW
tACT	Inputs active time4 before	DCKE0/1 = LOW and	16	-	16	-	16		-	tCK
	DRST_n is taken HIGH	DCS0/1_n = HIGH
tPDM	Propagation delay, single-bit
	switching, CK_t/ CK_c to out-	1.2V Operation	1	1.3	1	1.3	1		1.3	ns
	put
tDIS		Rising edge of Yn_t to	0.5*tCK +		0.5*tCK +		0.5*tCK +
	output disable time		tQSK1(mi	-	tQSK1(mi	-	tQSK1(mi		-	ps
		output float
			n)		n)		n)
tEN		Output valid to rising	0.5*tCK -		0.5*tCK -		0.5*tCK -
	output enable time		tQSK1(m	-	tQSK1(m	-	tQSK1(m		-	ps
		edge of Yn_t
			ax)		ax)		ax)
CI	Input capacitance, Data inputs		0.8	1.1	0.8	1.0	0.8		1.0		1,2
CCK	Input capacitance, CK_t, CK_c		0.8	1.1	0.8	1.0	0.8		1.0	pF	1,2
CIR	Input capacitance, DRST_n	VI=VDD or VSS ;	0.5	2.0	0.5	2.0	0.5		2.0
		VDD=1.2V

NOTE :

1)This parameter does not include package capacitance

2)Data inputs are DCKE0/1, DODT0/1, DA0..DA17, DBA0..DBA1, DBG0..DBG1, DACT_n, DC0..DC2, DPAR, DCS0/1_n

8.2 Clock driver Characteristics

DDR4-1600/1866/

DDR4-2400

DDR4-2666

DDR-2933

Symbol

Parameter

Conditions

2133

Units

Min

Max

Min

Max

Min

Max

Min

Max

tjit (cc)

Cycle-to-cycle period jitter

CK_t/CK_c stable

0

0.025 x

0

0.025 x

0

0.025 x

0

0.025 x

ps

tCK

tCK

tCK

tCK

tSTAB

Stabilization time

-

5

-

5

-

5

-

5

us

tCKsk

Clock Output skew

-

10

-

10

-

10

-

10

ps

tjit(per)

Yn Clock Period jitter

-0.025 *

0.025 *

-0.025 *

0.025 *

-0.025 *

0.025 *

-0.025 *

0.025 *

ps

tCK

tCK

tCK

tCK

tCK

tCK

tCK

tCK

tjit(hper)

Half period jitter

-0.032 *

0.032 *

-0.032 *

0.032 *

-0.032 *

0.032 *

-0.032 *

0.032 *

ps

tCK

tCK

tCK

tCK

tCK

tCK

tCK

tCK

tQsk1

Qn Output to clock tolerance

-0.125 *

0.125 *

-0.125 *

0.125 *

-0.1 *

0.1 * tCK

-0.1 *

0.1 * tCK

ps

tCK

tCK

tCK

tCK

tCK

tCK

tdynoff

Maximum re-driven dynamic

-

50

-

45

-

45

-

40

ps

clock off-set

NOTE :

1) Refer to JEDEC specification.

- 11 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

9. FUNCTION BLOCK DIAGRAM:

9.1 128GB, 16Gx72 Module

9.1.1 (PC4-RDIMM Populated as 2 physical ranks / 2 logical ranks of x4 DDR4 SDRAMs)

	BG[1:0]			QABG[1:0] -> BG[1:0]: SDRAMs D[20:1]
				QBBG[1:0] -> BG[1:0]: SDRAMs D[36:21]
	BA[1:0]			QABA[1:0] -> BA[1:0]: SDRAMs D[20:1]
				QBBA[1:0] -> BA[1:0]: SDRAMs D[36:21]
	A[17:0]			QAA[17:0] -> A[17:0]: SDRAMs D[20:1]
				QBA[17:0] -> A[17:0]: SDRAMs D[36:21]
	ACT_n			QAACT_n -> ACT_n: SDRAMs D[20:1]
			R	QBACT_n -> ACT_n: SDRAMs D[36:21]
	C[2:0]			QAC[2:0] -> C[2:0]: SDRAMs D[20:1]
				QBC[2:0] -> C[2:0]: SDRAMs D[36:21]
	PARITY		e	QAPAR -> PAR: SDRAMs D[20:1]
				QBPAR -> PAR: SDRAMs D[36:21]
	CKE0		g	QACKE0 -> CKE: SDRAMs D[10:1]
				QBCKE0 -> CKE: SDRAMs D[28:21]
	CKE1		i	QACKE1 -> CKE: SDRAMs D[20:11]
				QBCKE1 -> CKE: SDRAMs D[36:29]
	ODT0		s	QAODT0 -> ODT: SDRAMs D[10:1]
				QBODT0 -> ODT: SDRAMs D[28:21]
	ODT1		t	QAODT1 -> ODT: SDRAMs D[20:11]
				QBODT1 -> ODT: SDRAMs D[36:29]
	CS0_n		e	QACS0_n -> CS_n: SDRAMs D[10:1]
				QBCS0_n -> CS_n: SDRAMs D[28:21]
	CS1_n		r.	QACS1_n -> CS_n: SDRAMs D[20:11]
				QBCS1_n -> CS_n: SDRAMs D[36:29]
	CK0_t			Y0_t -> CK_t: SDRAMs D[24:21], D[32:29]
				Y1_t -> CK_t: SDRAMs D[5:1], D[15:11]
				Y2_t -> CK_t: SDRAMs D[28:25], D[36:33]
	CK0_c			Y3_t -> CK_t: SDRAMs D[10:6], D[20:16]
				Y0_c -> CK_c: SDRAMs D[24:21], D[32:29]
	CK1_t			Y1_c -> CK_c: SDRAMs D[5:1], D[15:11]
				Y2_c -> CK_c: SDRAMs D[28:25], D[36:33]
	CK1_c			Y3_c -> CK_c: SDRAMs D[10:6], D[20:16]
	RESET_n			QRST_n -> RESET_n: All SDRAMs
	ALERT_n			ERROR_IN_n <- ALERT_n: All SDRAMs
		D1	D2	D3	D4	D5	Register	D21	D22	D23	D24
	Front	D6	D7	D8	D9	D10		D25	D26	D27	D28
	Back	D16	D17	D18	D19	D20		D33	D34	D35	D36

D11

D12

D13

D14

D15

D29

D30

D31

D32

Address, Command and Control lines

NOTE :

1)CK0_t, CK0_c terminated with 120 ± 5% resistor.

2)CK1_t, CK1_c terminated with 120 ± 5% resistor but not used.

3)Unless otherwise noted resistors are 22 ± 5%.

- 12 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

QACS0_n

QAODT0

QACKE0

QACS1_n

QAODT1

QACKE1

					CKE ODT CS n
DQS0_t				DQS_t	D6
DQS0_c				DQS_c
DQ[3:0]				DQ[3:0]

ZQ VSS

DQS_t

DQS_c

DQ[3:0]

CKE ODT n _ ZQ CS

D16

VSS					CKE ODT CSn
DQS9_t				DQS_t	D1
DQS9_c				DQS_c
DQ[7:4]				DQ[3:0]

ZQ VSS

CKE

DQS_t

DQS_c

DQ[3:0]

ODT CSn
ZQ				VSS

D11

					CKE ODT CS n
DQS1_t				DQS_t	D7
DQS1_c				DQS_c
DQ[11:8]				DQ[3:0]

ZQ VSS

CKE ODT n _ ZQ CS

DQS_t

DQS_c D17 DQ[3:0]

VSS					CKE ODT CSn
DQS10_t				DQS_t	D2
DQS10_c				DQS_c
DQ[15:12]				DQ[3:0]

ZQ VSS

CKE

DQS_t

DQS_c

DQ[3:0]

ODT CSn				VSS
ZQ

D12

					CKE ODT CS n
DQS2_t				DQS_t	D8
DQS2_c				DQS_c
DQ[19:16]				DQ[3:0]

ZQ VSS

CKE ODT n _ ZQ CS

DQS_t

DQS_c D18 DQ[3:0]

VSS					CKE ODT CSn
DQS11_t				DQS_t	D3
DQS11_c				DQS_c
DQ[23:20]				DQ[3:0]

ZQ VSS

CKE

DQS_t

DQS_c

DQ[3:0]

ODT CSn				VSS
ZQ

D13

					CKE ODT CS n
DQS3_t				DQS_t	D9
DQS3_c				DQS_c
DQ[27:24]				DQ[3:0]

ZQ VSS

CKE ODT n_ ZQ

CS

DQS_t

DQS_c D19 DQ[3:0]

VSS					CKE ODT CSn
DQS12_t				DQS_t	D4
DQS12_c				DQS_c
DQ[31:28]				DQ[3:0]

ZQ VSS

CKE

DQS_t

DQS_c

DQ[3:0]

ODT CSn				VSS
ZQ

D14

CKE

DQS8_t DQS_t DQS8_c DQS_c CB[3:0] DQ[3:0]

ODT

	n	ZQ
	CS

D10

VSS

DQS_t

DQS_c

DQ[3:0]

CKE ODT

	n	ZQ
	CS

D20

VSS					CKE ODT CSn
DQS17_t				DQS_t	D5
DQS17_c				DQS_c
CB[7:4]				DQ[3:0]

ZQ VSS

CKE

DQS_t

DQS_c

DQ[3:0]

ODT CSn				VSS
ZQ

D15

NOTE :

1)Unless otherwise noted, resistor values are 15 ± 5%.

2)See the Net Structure diagrams for all resistors associated with the command, address and Control bus.

3)ZQ resistors are 240 ± 1%. For all other resistor values refer to the appropriate wiring diagram.

4)DRAM TEN pin need to be tied to VSS.

- 13 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

QBCS0_n

QBODT0

QBCKE0

QBCS1_n

QBODT1

QBCKE1

ODT

CKE

DQS4_t DQS_t DQS4_c DQS_c DQ[35:32] DQ[3:0]

	n	ZQ
	CS

D25

VSS

DQS_t

DQS_c

DQ[3:0]

CKE

ODT

	n	ZQ
	CS

D33

VSS

DQS13_t DQS_t DQS13_c DQS_c DQ[39:36] DQ[3:0]

CKE ODT

	n	ZQ
	CS

D21

VSS

DQS_t

DQS_c

DQ[3:0]

CKE

ODT

n
CS	ZQ				VSS

D29

ODT

CKE

DQS5_t DQS_t DQS5_c DQS_c DQ[43:40] DQ[3:0]

n_ ZQ CS

D26

VSS

DQS_t

DQS_c

DQ[3:0]

CKE

ODT

n_ ZQ CS

D34

VSS

DQS14_t DQS_t DQS14_c DQS_c DQ[47:44] DQ[3:0]

CKE ODT

n_ ZQ CS

D22

VSS

DQS_t

DQS_c

DQ[3:0]

CKE

ODT

CSn				VSS
ZQ

D30

ODT

CKE

DQS6_t DQS_t DQS6_c DQS_c DQ[51:48] DQ[3:0]

	n	ZQ
	CS

D27

VSS

DQS_t

DQS_c

DQ[3:0]

CKE

ODT

	n	ZQ
	CS

D35

VSS

DQS15_t DQS_t DQS15_c DQS_c DQ[55:52] DQ[3:0]

CKE ODT

	n	ZQ
	CS

D23

VSS

DQS_t

DQS_c

DQ[3:0]

CKE

ODT

n
CS	ZQ				VSS

D31

ODT

CKE

DQS7_t DQS_t DQS7_c DQS_c DQ[59:56] DQ[3:0]

n
CS_	ZQ

D28

VSS

DQS_t

DQS_c

DQ[3:0]

CKE

ODT

n
CS_	ZQ

D36

VSS

DQS16_t DQS_t DQS16_c DQS_c DQ[63:60] DQ[3:0]

CKE

ODT CSn				VSS
ZQ

D24

VDDSPD

SA2

VPP

SA1

VDD

SA0

SA0 SA1 SA2

SA0 SA1 SA2

VTT

SCL

SCL

SCL

BFUNC

VSS

VREFCA

SDA

SDA

SDA

VSS

EVENT_n

ZQCAL

VSS

Serial PD with

Register

Thermal sensor

NOTE :

1)Unless otherwise noted, resistor values are 15 ± 5%.

2)See the Net Structure diagrams for all resistors associated with the command, address and control bus.

3)ZQ resistors are 240 ±1%. For all other resistor values refer to the appropriate wiring diagram.

4)DRAM TEN pin need to be tied to VSS.

ODT

CKE

DQS_t

DQS_c

DQ[3:0]

Serial PD

D1-D36

D1-D36

D1-D36

D1-D36

D1-D36

n
CS_	ZQ				VSS

D32

- 14 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

10. ABSOLUTE MAXIMUM RATINGS

[Table 5] Absolute Maximum DC Ratings

Symbol	Parameter	Rating	Units	NOTE
VDD	Voltage on VDD pin relative to Vss	-0.3 ~ 1.5	V	1,3
VDDQ	Voltage on VDDQ pin relative to Vss	-0.3 ~ 1.5	V	1,3
VPP	Voltage on VPP pin relative to Vss	-0.3 ~ 3.0	V	4
VIN, VOUT	Voltage on any pin except VREFCA relative to Vss	-0.3 ~ 1.5	V	1,3,5
TSTG	Storage Temperature	-55 to +100	°C	1,2

NOTE :

1)Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability

2)Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

3)VDD and VDDQ must be within 300mV of each other at all times; and VREFCA must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500mV; VREFCA may be equal to or less than 300mV

4)VPP must be equal or greater than VDD/VDDQ at all times.

5)Overshoot area above 1.5 V is specified in 12.3.4, 12.3.5Clock Overshoot and Undershoot Specifications and 12.3.6.

11. AC & DC OPERATING CONDITIONS

[Table 6] Recommended DC Operating Conditions

	Symbol	Parameter		Rating		Unit	NOTE
			Min.	Typ.	Max.
	VDD	Supply Voltage	1.14	1.2	1.26	V	1,2,3
	VDDQ	Supply Voltage for Output	1.14	1.2	1.26	V	1,2,3
	VPP	Peak-to-Peak Voltage	2.375	2.5	2.75	V	3

NOTE :

1)Under all conditions VDDQ must be less than or equal to VDD.

2)VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

3)DC bandwidth is limited to 20MHz.

- 15 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12. AC & DC INPUT MEASUREMENT LEVELS

12.1 AC & DC Logic Input Levels for Single-Ended Signals

[Table 7] Single-ended AC & DC Input Levels for Command and Address

	Symbol	Parameter	DDR4-1600/1866/2133/2400		DDR4-2666/2933		Unit	NOTE
			Min.	Max.	Min.	Max.
	VIH.CA(DC75)	DC input logic high	VREFCA+ 0.075	VDD	-	-	V
	VIH.CA(DC65)		-	-	VREFCA+ 0.065	VDD
	VIL.CA(DC75)	DC input logic low	VSS	VREFCA-0.075	-	-	V
	VIL.CA(DC65)		-	-	VSS	VREFCA-0.065
	VIH.CA(AC100)	AC input logic high	VREF + 0.1	Note 2	-	-	V
	VIH.CA(AC90)		-	-	VREF + 0.09	Note 2		1
	VIL.CA(AC100)	AC input logic low	Note 2	VREF - 0.1	-	-	V
	VIL.CA(AC90)		-	-	Note 2	VREF - 0.09		1
	VREFCA(DC)	Reference Voltage for ADD, CMD inputs	0.49*VDD	0.51*VDD	0.49*VDD	0.51*VDD	V	2,3

NOTE :

1)See “Overshoot and Undershoot Specifications” on section12.3AC and DC Logic Input Levels for Differential Signals.

2)The AC peak noise on VREFCA may not allow VREFCA to deviate from VREFCA(DC) by more than ± 1% VDD (for reference : approx. ± 12mV)

3)For reference : approx. VDD/2 ± 12mV.

12.2 AC and DC Input Measurement Levels: VREF Tolerances.

The DC-tolerance limits and ac-noise limits for the reference voltages VREFCA is illustrated in Figure 1. It shows a valid reference voltage VREF(t) as a function of time. (VREF stands for VREFCA).

VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirement in Table 7. Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than ± 1% VDD.

voltage

VDD

VSS

time

Figure 1. Illustration of VREF(DC) tolerance and VREF AC-noise limits

The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent on VREF.

"VREF" shall be understood as VREF(DC), as defined in Figure 1.

This clarifies, that DC-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to which setup and hold is measured. System timing and voltage budgets need to account for VREF(DC) deviations from the optimum position within the

data-eye of the input signals.

This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with VREF AC-noise. Timing and voltage effects due to AC-noise on VREF up to the specified limit (+/-1% of VDD) are included in DRAM timings and their associated deratings.

- 16 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.3 AC and DC Logic Input Levels for Differential Signals

12.3.1 Differential Signals Definition

tDVAC

VIH.DIFF.AC.MIN

c)

VIH.DIFF.MIN

-CK)t - CK

0.0

(CK

half cycle

Voltage

VIL.DIFF.MAX

Input

Differential

VIL.DIFF.AC.MAX

tDVAC

time

Figure 2. Definition of differential ac-swing and “time above ac-level” tDVAC

NOTE:

1)Differential signal rising edge from VIL.DIFF.MAX to VIH.DIFF.MIN must be monotonic slope.

2)Differential signal falling edge from VIH.DIFF.MIN to VIL.DIFF.MAX must be monotonic slope.

12.3.2 Differential Swing Requirements for Clock (CK_t - CK_c)

[Table 8] Differential AC and DC Input Levels

	Symbol	Parameter	DDR4 -1600/1866/2133		DDR4 -2400/2666		DDR4-2933		unit	NOT
			min	max	min	max	min	max		E
	VIHdiff	differential input high	+0.150	NOTE 3	+0.135	NOTE 3	+0.125	NOTE 3	V	1
	VILdiff	differential input low	NOTE 3	-0.150	NOTE 3	-0.135	NOTE 3	-0.125	V	1
	VIHdiff(AC)	differential input high ac	2 x (VIH(AC) -	NOTE 3	2 x (VIH(AC) -	NOTE 3	2 x (VIH(AC) -	NOTE 3	V	2
			VREF)		VREF)		VREF)
	VILdiff(AC)	differential input low ac	NOTE 3	2 x (VIL(AC) -	NOTE 3	2 x (VIL(AC) -	NOTE 3	2 x (VIL(AC) -	V	2
				VREF)		VREF)		VREF)

NOTE :

1)Used to define a differential signal slew-rate.

2)for CK_t - CK_c use VIH.CA/VIL.CA(AC) of ADD/CMD and VREFCA;

3)These values are not defined; however, the differential signals CK_t - CK_c, need to be within the respective limits (VIH.CA(DC) max, VIL.CA(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot.

[Table 9] Allowed Time Before Ringback (tDVAC) for CK_t - CK_c

Slew Rate [V/ns]		tDVAC [ps] @ |VIH/Ldiff(AC)| = 200mV
	min		max
> 4.0	120		-
4.0	115		-
3.0	110		-
2.0	105		-
1.8	100		-
1.6	95		-
1.4	90		-
1.2	85		-
1.0	80		-
< 1.0	80		-

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.3.3 Single-ended Requirements for Differential Signals

Each individual component of a differential signal (CK_t, CK_c) has also to comply with certain requirements for single-ended signals.

CK_t and CK_c have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH.CA(AC) / VIL.CA(AC)) for ADD/CMD signals) in every half-cycle.

Note that the applicable ac-levels for ADD/CMD might be different per speed-bin etc. E.g., if Different value than VIH.CA(AC100)/VIL.CA(AC100) is used for ADD/CMD signals, then these ac-levels apply also for the single-ended signals CK_t and CK_c.

VDD or VDDQ

VSEH min

VDD/2 or VDDQ/2

CK

VSEL max

VSEL

VSS or VSSQ

time

Figure 3. Single-ended requirement for differential signals.

Note that, while ADD/CMD signal requirements are with respect to VrefCA, the single-ended components of differential signals have a requirement with respect to VDD / 2; this is nominally the same. The transition of single-ended signals through the ac-levels is used to measure setup time. For singleended components of differential signals the requirement to reach VSELmax, VSEHmin has no bearing on timing, but adds a restriction on the common mode characteristics of these signals.

[Table 10] Single-ended Levels for CK_t, CK_c

	Symbol	Parameter	DDR4-1600/1866/2133		DDR4-2400/2666		DDR4-2933		Unit	NOTE
			Min	Max	Min	Max	Min	Max
	VSEH	Single-ended high-level for	(VDD/2)+0.100	NOTE3	(VDD/2)+0.95	NOTE3	(VDD/2)+0.85	NOTE3	V	1, 2
		CK_t, CK_c
	VSEL	Single-ended low-level for CK_t,	NOTE3	(VDD/2)-0.100	NOTE3	(VDD/2)-0.95	NOTE3	(VDD/2)-0.85	V	1, 2
		CK_c
	NOTE :

1)For CK_t - CK_c use VIH.CA/VIL.CA(AC) of ADD/CMD;

2)VIH(AC)/VIL(AC) for ADD/CMD is based on VREFCA;

3)These values are not defined, however the single-ended signals CK_t - CK_c need to be within the respective limits (VIH.CA(DC) max, VIL.CA(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot.

- 18 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.3.4 Address, Command and Control Overshoot and Undershoot specifications

[Table 11] AC overshoot/undershoot specification for Address, Command and Control pins

				Specification
Parameter	Symbol	DDR4-	DDR4-	DDR4-		DDR4-	DDR4-	DDR4-	Unit	NOTE
		1600	1866	2133		2400	2666	2933
Maximum peak amplitude above VAOS	VAOSP				0.06				V
Upper boundary of overshoot area AAOS1	VAOS			VDD +0.24					V	1
Maximum peak amplitude allowed for undershoot	VAUS				0.30				V
Maximum overshoot area per 1 tCK above VAOS	AAOS2	0.0083	0.0071	0.0062		0.0055	0.0055	0.0055	V-ns
Maximum overshoot area per 1 tCK between VDD and	AAOS1	0.2550	0.2185	0.1914		0.1699	0.1699	0.1699	V-ns
VAOS
Maximum undershoot area per 1 tCK below VSS	AAUS	0.2644	0.2265	0.1984		0.1762	0.1762	0.1762	V-ns
(A0-A13,A17,BG0-BG1,BA0-BA1,ACT_n,RAS_n/A16,CAS_n/A15,WE_n/A14,CS_n,CKE,ODT,C2-C0)

NOTE :

1)The value of VAOS matches VDD absolute max as defined in Table 5 Absolute Maximum DC Ratings if VDD equals VDD max as defined in Table 6 Recommended DC Operating Conditions. If VDD is above the recommended operating conditions, VAOS remains at VDD absolute max as defined in Table 5.

VAOSP

AAOS2

VAOS

AAOS1

Volts

VDD

1 tCK

(V)

VSS

AAUS

V

AUS

Figure 4. Address, Command and Control Overshoot and Undershoot Definition

- 19 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.3.5 Clock Overshoot and Undershoot Specifications

[Table 12] AC overshoot/undershoot specification for Clock

				Specification
Parameter	Symbol	DDR4-	DDR4-	DDR4-		DDR4-	DDR4-	DDR4-	Unit	NOTE
		1600	1866	2133		2400	2666	2933
Maximum peak amplitude above VCOS	VCOSP				0.06				V
Upper boundary of overshoot area ADOS1	VCOS			VDD +0.24					V	1
Maximum peak amplitude allowed for undershoot	VCUS				0.30				V
Maximum overshoot area per 1 UI above VCOS	ACOS2	0.0038	0.0032	0.0028		0.0025	0.0025	0.0025	V-ns
Maximum overshoot area per 1 UI between VDD and	ACOS1	0.1125	0.0964	0.0844		0.0750	0.0750	0.0750	V-ns
VDOS
Maximum undershoot area per 1 UI below VSS	ACUS	0.1144	0.0980	0.0858		0.0762	0.0762	0.0762	V-ns
	(CK_t, CK_c)
NOTE :

1)The value of VCOS matches VDD absolute max as defined in Table 5 Absolute Maximum DC Ratings if VDD equals VDD max as defined in Table 6 Recommended DC Operating Conditions. If VDD is above the recommended operating conditions, VCOS remains at VDD absolute max as defined in Table 5.

VCOSP

ACOS2

VCOS

ACOS1

Volts

VDD

1 UI

(V)

VSS

ACUS

VCUS

Figure 5. Clock Overshoot and Undershoot Definition

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.3.6 Data, Strobe and Mask Overshoot and Undershoot Specifications

[Table 13] AC overshoot/undershoot specification for Data, Strobe and Mask

				Specification						NOT
Parameter	Symbol	DDR4-	DDR4-	DDR4-		DDR4-	DDR4-	DDR4-	Unit
										E
		1600	1866	2133		2400	2666	2933
Maximum peak amplitude above VDOS	VDOSP				0.16				V
Upper boundary of overshoot area ADOS1	VDOS			VDDQ + 0.24					V	1
Lower boundary of undershoot area ADUS1	VDUS				0.30				V	2
Maximum peak amplitude below VDUS	VDUSP	0.10	0.10	0.10		0.10	0.10	0.10	V
Maximum overshoot area per 1 UI above VDOS	ADOS2	0.0150	0.0129	0.0113		0.0100	0.0100	0.0100	V-ns
Maximum overshoot area per 1 UI between	ADOS1	0.1050	0.0900	0.0788		0.0700	0.0700	0.0700	V-ns
VDDQ and VDOS
Maximum undershoot area per 1 UI between	ADUS1	0.1050	0.0900	0.0788		0.0700	0.0700	0.0700	V-ns
VSSQ and VDUS1
Maximum undershoot area per 1 UI below VDUS	ADUS2	0.0150	0.0129	0.0113		0.0100	0.0100	0.0100	V-ns

NOTE :

1)The value of VDOS matches (VIN, VOUT) max as defined in Table 5 Absolute Maximum DC Ratings if VDDQ equals VDDQ max as defined in Table 6 Recommended DC Operating Conditions. If VDDQ is above the recommended operating conditions, VDOS remains at (VIN, VOUT) max as defined in Table 5.

2)The value of VDUS matches (VIN, VOUT) min as defined in Table 5 Absolute Maximum DC Ratings

VDOSP

ADOS2

VDOS

ADOS1

Volts

VDDQ

1 UI

(V)

VSSQ

ADUS1

VDUSP

Figure 6. Data, Strobe and Mask Overshoot and Undershoot Definition

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.4 Slew Rate Definitions

12.4.1 Slew Rate Definitions for Differential Input Signals (CK)

Input slew rate for differential signals (CK_t, CK_c) are defined and measured as shown in Table 14 and Figure 7.

[Table 14] Differential Input Slew Rate Definition

	Description	Measured		Defined by
		from	to
	Differential input slew rate for rising edge (CK_t - CK_c)	VILdiffmax	VIHdiffmin	[VIHdiffmin - VILdiffmax] / DeltaTRdiff
	Differential input slew rate for falling edge (CK_t - CK_c)	VIHdiffmin	VILdiffmax	[VIHdiffmin - VILdiffmax] / DeltaTFdiff

NOTE :

1) The differential signal (i,e.,CK_t - CK_c) must be linear between these thresholds.

Delta TRdiff

Differential Input Voltage(i,e, CK_t - CK_c)

VIHdiffmin

0

VILdiffmax

Delta TFdiff

Figure 7. Differential Input Slew Rate Definition for CK_t, CK_c

- 22 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.4.2 Slew Rate Definition for Single-ended Input Signals (CMD/ADD)

Delta TRsingle

VIHCA(AC) Min

VIHCA(DC) Min

VREFCA(DC)

VILCA(DC) Max

VILCA(AC) Max

Delta TFsingle

Figure 8. Single-ended Input Slew Rate definition for CMD and ADD

NOTE :

1)Single-ended input slew rate for rising edge = {VIHCA(AC)Min - VILCA(DC)Max} / Delta TR single.

2)Single-ended input slew rate for falling edge = {VIHCA(DC)Min - VILCA(AC)Max} / Delta TF single.

3)Single-ended signal rising edge from VILCA(DC)Max to VIHCA(DC)Min must be monotonic slope.

4)Single-ended signal falling edge from VIHCA(DC)Min to VILCA(DC)Max must be monotonic slope.

- 23 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.5 Differential Input Cross Point Voltage

To guarantee tight setup and hold times as well as output skew parameters with respect to clock, each cross point voltage of differential input signals (CK_t, CK_c) must meet the requirements in Table 15. The differential input cross point voltage VIX is measured from the actual cross point of true and complement signals to the midlevel between of VDD and VSS.

VDD

CK_t

Vix

VDD/2

CK_c

VSEH

VSEL

VSS

Figure 9. Vix Definition (CK)

[Table 15] Cross Point Voltage for Differential Input Signals (CK)

Symbol	Parameter			DDR4-1600/1866/2133
			min		max
		VSEL < VDD/2 -		VDD/2 - 145mV =<	VDD/2 + 100mV =<	VDD/2 + 145mV <
-	Area of VSEH, VSEL			VSEL =< VDD/2 -	VSEH =< VDD/2 +
		145mV		100mV	145mV	VSEH
VlX(CK)	Differential Input Cross Point Voltage relative to	-120mV		-(VDD/2 - VSEL) +	(VSEH - VDD/2) -	120mV
	VDD/2 for CK_t, CK_c			25mV	25mV

Symbol	Parameter			DDR4-2400
			min		max
		VSEL <		VDD/2 - 145 mV	VDD/2 + 100 mV	VDD/2 + 145 mV <
-	Area of VSEH, VSEL			=< VSEL =<	=< VSEH =<
		VDD/2 - 145 mV				VSEH
				VDD/2 - 100 mV	VDD/2 + 145 mV
VlX(CK)	Differential Input Cross Point Voltage relative to	-120mV		- (VDD/2 - VSEL) +	(VSEH - VDD/2) -	120mV
	VDD/2 for CK_t, CK_c			25 mV	25 mV

Symbol	Parameter			DDR4-2666/2933
			min		max
		VSEL <		VDD/2 - 145 mV	VDD/2 + 100 mV	VDD/2 + 145 mV
-	Area of VSEH, VSEL			=< VSEL =<	=< VSEH =<
		VDD/2 - 145 mV				< VSEH
				VDD/2 - 100 mV	VDD/2 + 145 mV
VlX(CK)	Differential Input Cross Point Voltage relative to	-110 mV		- (VDD/2 - VSEL)	(VSEH - VDD/2)	110mV
	VDD/2 for CK_t, CK_c			+ 30 mV	- 30 mV

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Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.6 CMOS rail to rail Input Levels

12.6.1 CMOS rail to rail Input Levels for RESET_n

[Table 16] CMOS rail to rail Input Levels for RESET_n

Parameter	Symbol	Min	Max	Unit	NOTE
AC Input High Voltage	VIH(AC)_RESET	0.8*VDD	VDD	V	6
DC Input High Voltage	VIH(DC)_RESET	0.7*VDD	VDD	V	2
DC Input Low Voltage	VIL(DC)_RESET	VSS	0.3*VDD	V	1
AC Input Low Voltage	VIL(AC)_RESET	VSS	0.2*VDD	V	7
Rising time	TR_RESET	-	1.0	us	4
RESET pulse width	tPW_RESET	1.0	-	us	3,5

NOTE :

1)After RESET_n is registered LOW, RESET_n level shall be maintained below VIL(DC)_RESET during tPW_RESET, otherwise, SDRAM may not be reset.

2)Once RESET_n is registered HIGH, RESET_n level must be maintained above VIH(DC)_RESET, otherwise, SDRAM operation will not be guaranteed until it is reset asserting RESET_n signal LOW.

3)RESET is destructive to data contents.

4)No slope reversal(ringback) requirement during its level transition from Low to High.

5)This definition is applied only “Reset Procedure at Power Stable”.

6)Overshoot might occur. It should be limited by the Absolute Maximum DC Ratings.

7)Undershoot might occur. It should be limited by Absolute Maximum DC Ratings.

tPW_RESET

0.8*VDD

0.7*VDD

0.3*VDD

0.2*VDD

TR_RESET

Figure 10. RESET_n Input Slew Rate Definition

- 25 -

Registered DIMM

datasheet	Rev. 1.0
	DDR4 SDRAM

12.7 AC and DC Logic Input Levels for DQS Signals

12.7.1 Differential signal definition

Figure 11. Definition of differential DQS Signal AC-swing Level

12.7.2 Differential swing requirements for DQS (DQS_t - DQS_c)

[Table 17] Differential AC and DC Input Levels for DQS

DDR4-1600, 1866,

DDR4-2400

DDR4-2666

DDR4-2933

Symbol

Parameter

2133

Unit

Note

Min

Max

Min

Max

Min

Max

Min

Max

VIHDiffPeak

VIH.DIFF.Peak Voltage

186

Note2

160

Note2

150

Note2

145

Note2

mV

1

VILDiffPeak

VIL.DIFF.Peak Voltage

Note2

-186

Note2

-160

Note2

-150

Note2

-145

mV

1

NOTE :

1)Used to define a differential signal slew-rate.

2)These values are not defined; however, the differential signals DQS_t - DQS_c, need to be within the respective limits Overshoot, Undershoot Specification for single-ended signals.

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