Samsung M471A4G43MB1-CTD User Manual

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Samsung M471A4G43MB1-CTD User Manual

SERIAL PRESENCE DETECT

M471A4G43MB1-CTD00

Organization : 1G x 64

Composition : 512M x8 *16ea

Used component part # : K4AAG085WM-BCTDM00

#of rows in module : 2Rows

#of banks in component : 4Banks 4BG

Feature : 30.0mm height & Double sided component

Refresh : 8K/64ms

Bin Sort : TD(DDR4 2666@CL=19)

RCD Vendor and Revision : PCB Rev 1.0

Byte

Function Described

Function Supported

Hex Value

Note

 

 

#

CTD00

CTD00

 

 

 

 

 

 

 

 

 

 

0

Number of Bytes Used / Number of Bytes in SPD Device / CRC Coverage

512B Total, 384B Used

23h

 

 

 

 

 

 

1

SPD Revision

Ver 1.1

11h

 

 

 

 

 

 

2

Key Byte / DRAM Device Type

DDR4 SDRAM

0Ch

 

 

 

 

 

 

3

Key Byte / Module Type

SODIMM

03h

 

 

 

 

 

 

4

SDRAM Density and Banks

16Gb,4BG&4Banks

86h

 

 

 

 

 

 

5

SDRAM Addressing

Row bits 17,Column bits 10

29h

 

 

 

 

 

 

6

SDRAM Device Type

Monolithinc Device

00h

 

 

 

 

 

 

7

SDRAM Optional Features

Unlimited MAC

08h

 

 

 

 

 

 

8

SDRAM Thermal and Refresh Option

Reserved

00h

 

 

 

 

 

 

9

Other SDRAM Optional Features

sPPR supported

60h

 

 

 

 

 

 

10

Reserved

Reserved

00h

 

 

 

 

 

 

11

Module Nominal Voltage, VDD

1.2V

03h

 

 

 

 

 

 

12

Module Organization

2Rx8

09h

 

 

 

 

 

 

13

Module Memory Bus Width

64bit, Non-ECC

03h

 

 

 

 

 

 

14

Module Thermal Sensor

without TS

00h

 

 

 

 

 

 

15~16

Reserved

Reserved

00h

 

 

 

 

 

 

17

Timebases

MTB 125ps, FTB 1ps

00h

 

 

 

 

 

 

18

SDRAM Minimum Cycle Time(tckavg min)

0.750ns

06h

 

 

 

 

 

 

19

SDRAM Minimum Cycle Time(tckavg max)

1.6ns

0Dh

 

 

 

 

 

 

20

Cas Latency Supported, First Byte

10,11,12,13,14,15,16,17,18, 19,20

F8h

 

 

 

 

 

 

21

Cas Latency Supported, Second Byte

10,11,12,13,14,15,16,17,18, 19,20

3Fh

 

 

 

 

 

 

22

Cas Latency Supported, Third Byte

10,11,12,13,14,15,16,17,18, 19,20

00h

 

 

 

 

 

 

23

Cas Latency Supported, Fourth Byte

10,11,12,13,14,15,16,17,18, 19,20

00h

 

 

 

 

 

 

24

Minimum Cas Latency Time (tAAmin)

13.75ns

6Eh

 

 

 

 

 

 

25

Minimum RAS to CAS Delay Time(tRCD min)

13.75ns

6Eh

 

 

 

 

 

 

26

Minimum Raw Precharge Delay Time(tRP min)

13.75ns

6Eh

 

 

 

 

 

 

27

Upper Nibbles for tRASmin and tRCmin

tRAS=32ns, tRC=45.75ns

11h

 

 

 

 

 

 

28

Minimum Active to Precharge Delay Time (tRASmin), Least Significant Byte

tRAS=32ns

00h

 

 

 

 

 

 

29

Minimum Active to Active/Refresh Delay Time (tRCmin), Least Significant Byte

tRC=45.75ns

6Eh

 

 

 

 

 

 

30

Minimum Refresh Recovery Delay Time (tRFC1min), LSB

550ns

30h

 

 

 

 

 

 

31

Minimum Refresh Recovery Delay Time (tRFC1min), MSB

550ns

11h

 

 

 

 

 

 

32

Minimum Refresh Recovery Delay Time (tRFC2min), LSB

350ns

F0h

 

 

 

 

 

 

33

Minimum Refresh Recovery Delay Time (tRFC2min), MSB

350ns

0Ah

 

 

 

 

 

 

34

Minimum Refresh Recovery Delay Time (tRFC4min), LSB

260ns

20h

 

 

 

 

 

 

35

Minimum Refresh Recovery Delay Time (tRFC4min), MSB

260ns

08h

 

 

 

 

 

 

36

Minimum Four Active Window Time (tFAWmin), Most Significant Nibble

21ns

00h

 

 

 

 

 

 

37

Minimum Four Activate Window Time (tFAWmin), Least Significant Byte

21ns

A8h

 

 

 

 

 

 

38

Minimum Active to Active Delay Time (tRRD_smin), different Bank Group

3.0ns

18h

 

 

 

 

 

 

39

Minimum Active to Active Delay Time (tRRD_Lmin), Same Bank Group

4.9ns

28h

 

 

 

 

 

 

40

Minimum CAS to CAS Delay Time(tCCD_Lmin), same bank group

5ns

28h

 

 

 

 

 

 

 

JUL. 2018

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