MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PZT2222AT1/D
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
•PNP Complement is PZT2907AT1
•The SOT-223 package can be soldered using wave or reflow.
•SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
• Available in 12 mm tape and reel |
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COLLECTOR |
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Use PZT2222AT1 to order the 7 inch/1000 unit reel. |
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2, 4 |
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Use PZT2222AT3 to order the 13 inch/4000 unit reel. |
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BASE |
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1 |
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3 |
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EMITTER |
PZT2222AT1
Motorola Preferred Device
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
1
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
Rating |
Symbol |
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Value |
Unit |
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Collector-Emitter Voltage |
VCEO |
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40 |
Vdc |
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Collector-Base Voltage |
VCBO |
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75 |
Vdc |
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Emitter-Base Voltage (Open Collector) |
VEBO |
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6.0 |
Vdc |
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Collector Current |
IC |
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600 |
mAdc |
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Total Power Dissipation up to T = 25°C(1) |
P |
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1.5 |
Watts |
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A |
D |
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Storage Temperature Range° |
Tstg |
± 65 to +150 |
°C |
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Junction Temperature° |
TJ |
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150 |
°C |
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THERMAL CHARACTERISTICS |
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Thermal Resistance from Junction to Ambient |
RqJA |
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83.3 |
°C/W |
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Lead Temperature for Soldering, 0.0625″ from case |
TL |
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260 |
°C |
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Time in Solder Bath |
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10 |
Sec |
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DEVICE MARKING |
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P1F |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) |
V(BR)CEO |
40 |
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Ð |
Vdc |
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) |
V(BR)CBO |
°75° |
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°Ð ° |
Vdc |
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) |
V(BR)EBO |
6.0 |
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Ð |
Vdc |
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = ± 3.0 Vdc) |
IBEX |
Ð |
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20 |
nAdc |
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = ± 3.0 Vdc) |
ICEX |
Ð |
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10 |
nAdc |
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) |
IEBO |
Ð |
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100 |
nAdc |
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1996
PZT2222AT1
ELECTRICAL CHARACTERISTICS Ð continued (TA = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS (continued)
Collector-Base Cutoff Current |
ICBO |
Ð |
10 |
nAdc |
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(VCB = 60 |
Vdc, IE = 0) |
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(VCB = 60 |
Vdc, IE = 0, TA = 125°C) |
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Ð |
10 |
μAdc |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 0.1 mAdc, VCE = 10 Vdc) |
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35 |
Ð |
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(IC = 1.0 mAdc, VCE = 10 Vdc) |
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50 |
Ð |
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(IC = 10 mAdc, VCE = 10 Vdc) |
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70 |
Ð |
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(IC = 10 mAdc, VCE = 10 Vdc, TA = ± 55°C) |
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35 |
Ð |
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(IC = 150 mAdc, VCE = 10 Vdc) |
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100 |
300 |
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(IC = 150 mAdc, VCE = 1.0 Vdc) |
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50 |
Ð |
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(IC = 500 mAdc, VCE = 10 Vdc) |
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40 |
Ð |
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Collector-Emitter Saturation Voltages |
VCE(sat) |
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Vdc |
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(IC = 150 mAdc, IB = 15 mAdc) |
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Ð |
0.3 |
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(IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
1.0 |
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Base-Emitter Saturation Voltages |
VBE(sat) |
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Vdc |
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(IC = 150 mAdc, IB = 15 mAdc) |
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0.6 |
1.2 |
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(IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
2.0 |
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Input Impedance° |
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°hie° |
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kΩ |
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(VCE = 10 |
Vdc, IC = 1.0 mAdc, f = 1.0 kHz) |
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2.0 |
8.0 |
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(VCE = 10 |
Vdc, IC = 10 mAdc, f = 1.0 kHz) |
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0.25 |
1.25 |
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Voltage Feedback Ratio |
hre |
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8.0x10-4 |
Ð |
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(V |
CE |
= 10 |
Vdc, I = 1.0 mAdc, f = 1.0 kHz) |
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Ð |
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C |
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4.0x10-4 |
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(V |
CE |
= 10 |
Vdc, I = 10 mAdc, f = 1.0 kHz) |
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Ð |
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C |
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Small-Signal Current Gain |
hfe |
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Ð |
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(VCE = 10 |
Vdc, IC = 1.0 mAdc, f = 1.0 kHz) |
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50 |
300 |
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(VCE = 10 |
Vdc, IC = 10 mAdc, f = 1.0 kHz) |
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75 |
375 |
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Output Admittance° |
°hoe° |
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μmhos |
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(VCE = 10 |
Vdc, IC = 1.0 mAdc, f = 1.0 kHz) |
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5.0 |
35 |
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(VCE = 10 |
Vdc, IC = 10 mAdc, f = 1.0 kHz) |
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25 |
200 |
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Noise Figure (VCE = 10 Vdc, IC = 100 μAdc, f = 1.0 kHz) |
F |
Ð |
4.0 |
dB |
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DYNAMIC CHARACTERISTICS |
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Current-Gain Ð Bandwidth Product |
fT |
300 |
Ð |
MHz |
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(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) |
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Output Capacitance |
Cc |
Ð |
8.0 |
pF |
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(VCB = 10 |
Vdc, IE = 0, f = 1.0 MHz) |
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Input Capacitance |
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Ce |
Ð |
25 |
pF |
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(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
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SWITCHING TIMES (TA = 25°C) |
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Delay Time |
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(VCC = 30 Vdc, IC = 150 mAdc, |
td |
Ð |
10 |
ns |
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IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc) |
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Rise Time |
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tr |
Ð |
25 |
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Figure 1 |
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Storage Time |
(VCC = 30 Vdc, IC = 150 mAdc, |
ts |
Ð |
225 |
ns |
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IB(on) = IB(off) = 15 mAdc) |
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Fall Time |
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tf |
Ð |
60 |
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Figure 2 |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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