Epson SG531P 16.0000M, SG531P 16.2570M, SG531P 20.0000M, SG531P 20.2752M, SG531P 23.5870M Datasheet

Crystal Oscillators - Seiko Epson

H C M O S / T T L D UA L I N L I N E P L A S T I C F U L L S I Z E S G - 5 1 / H A L F S I Z E S G - 5 3 1

SG-51/Half Size SG531

SG531

SG51

Features

•Frequency range 1.025MHz-125.0MHz

•Cylindrical type AT cut crystal quartz built in, thereby assuring high reliability

•Suitable for automatic insertion

•Use of CMOS IC enables reduction of current consumption

•Output load 10LSTTL/30-50pF

•Available with output enable and standby functions - SG51P and SG531P series

•Pin compatible with 8 pin and 14 pin metal can versions

•Packaged in plastic DIP package saves board space

•Extensive stock holding on SG531 series

Specifications

			Item	Symbol		Specifications				Remarks
					SG-51P/531P	SG-51PTJ/531 PTJ		SG-51PH/531PH
	Output frequency range			fo	1.0250MHz to	26.0001MHZ to 66.6667MHZ
					26.0000MHz
	Power source		Max. supply voltage	Vpp -GND		-0.3V to +7.0V
	voltage		Operating voltage	VDD		5.0V±0.5V
	Temperature		Storage temp.	TSTG	-55°C to +125°C	-55°C to +100°C
	range		Operating temp.	TOPR		-10°C to +70°C
	Soldering condition (lead part)			TSOL		Under 260°C within 10 sec.				Don’t heat up the package more than 150°C
	Frequency stability			f/fo		B: ±50ppm				-10°C to +70°C
						C: ±100ppm				B Type is possible up to 55.0MHz
	Current consumption			lop	23mA MAX.	35mA MAX.				No load condition
	Duty		C-MOS level	Tw/T	40% to 60%	–			40% to 60%	1.2VDD	level
			TTL level		45% to 55%				–	1.4V level
	Output voltage			VOH	VDD - 0.4V MIN.	2.4V MIN.			VDD -0.4V MIN.
				(IOH)	-400µA				-4µA
				VOL		0.4V MAX.
				(IOL )	16mA	8mA			4mA
	Output load		C-MOS	CL	50pF MAX.	–			50pF MAX.
	condition (fan out)		TTL	N	10TTL MAX.	5TTL MAX.			–
	Output enable/disable input voltage			VIH	2.0V MIN	3.5V MIN.			2.0V MIN.	IIH = 1µ A MAX. (OE=VDD)
				VIL	0.8V	1.5V MAX.			0.8V MAX.	IIL =-100µ A MIN. (OE=GND), PTJ: -500µA
	Output disable current			IOE	12mA MAX.	28mA MAX.			20mA MAX.	OE=GN
	Output		C-MOS level	TTLH	8nsec.MAX	5nsec. MAX			7nsec. MAX.	C-MOS load : 20% to 80% VDD
	rise time		TTL level							TTL load : 0.4V to 2.4V
	Output		C-MOS level	TTHL	8nsec.MAX	5nsec. MAX			7nsec. MAX.	C-MOS load : 80% to 20% VDD
	fall time		TTL level							TTL load : 2.4V to 0.4V
	Oscillation start up time			tOSC	4msec. MAX.	10msec. MAX.				More than for 1ms until VDD =0V to 4.5V
										Time at 4.5V to be 0sec.
	Aging			fa		±5ppm/year MAX.				Ta = 25°C, VDD	=5V, first year
	Shock resistance			S.R.		±20ppm MAX.				Drop Test of three times on hard board from
										75cm height or excitation test with 3000G x
										0.3ms x 1/2 sine wave in 3 directions.
	Notes

•Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.

•External by-pass capacitor is recommended.

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