DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PZM-NA series
Voltage regulator double diodes
Product specification |
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1999 Jun 11 |
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Supersedes data of 1999 Jun 02 |
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Philips Semiconductors |
Product specification |
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Voltage regulator double diodes |
PZM-NA series |
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FEATURES
∙Total power dissipation: max. 220 mW per diode
∙Small plastic package suitable for surface mounted design
∙Working voltage: nom. 2.4 V and 15 V (E24 range).
APPLICATIONS
∙ General regulation functions.
DESCRIPTION
Low power general purpose voltage regulator double diodes in a SOT346 (SC59) plastic package, suitable for surface mounted design.
MARKING
PINNING
PIN |
DESCRIPTION |
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1 |
cathode |
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2 |
cathode |
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3 |
anode |
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handbook, halfpage
3
3
1 2
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MAM407
Top view
Fig.1 Simplified outline (SOT346; SC59) and symbol.
TYPE NUMBER |
MARKING CODE |
TYPE NUMBER |
MARKING CODE |
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PZM2.4NBA |
2A4 |
PZM6.2NB2A |
6A2 |
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PZM2.7NB2A |
2A7 |
PZM6.8NB2A |
6A8 |
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PZM3.0NB2A |
3A0 |
PZM7.5NB2A |
7A5 |
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PZM3.3NB2A |
3A3 |
PZM8.2NB2A |
8A2 |
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PZM3.6NB2A |
3A6 |
PZM9.1NB2A |
9A1 |
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PZM3.9NB2A |
3A9 |
PZM10NB2A |
10A |
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PZM4.3NB2A |
4A3 |
PZM11NB2A |
11A |
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PZM4.7NB2A |
4A7 |
PZM12NB2A |
12A |
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PZM5.1NB2A |
5A1 |
PZM13NB2A |
13A |
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PZM5.6NB2A |
5A6 |
PZM15NB2A |
15A |
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1999 Jun 11 |
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Philips Semiconductors |
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Product specification |
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Voltage regulator double diodes |
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PZM-NA series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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Per diode |
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IF |
continuous forward current |
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− |
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200 |
mA |
IZSM |
non-repetitive peak current |
tp = 100 μs; square wave |
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see Table 1 |
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P |
power dissipation; see note 1 |
Tamb = 25 °C |
− |
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220 |
mW |
Tstg |
storage temperature |
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−65 |
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+150 |
°C |
Tj |
operating junction temperature |
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− |
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150 |
°C |
Note
1. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-s |
thermal resistance from junction to soldering point |
one diode loaded; note 1 |
350 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
one diode loaded; note 2 |
560 |
K/W |
Notes
1.Solderpoint of cathode tab.
2.Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.
1999 Jun 11 |
3 |
Philips Semiconductors |
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Product specification |
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Voltage regulator double diodes |
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PZM-NA series |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MAX. |
UNIT |
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VF |
forward voltage |
IF = 10 mA; see Fig.2 |
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0.9 |
V |
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IF = 100 mA; see Fig.2 |
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1.1 |
V |
IR |
reverse current |
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PZM2.4NBA |
VR = 1 V |
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50 |
μA |
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PZM2.7NB2A |
VR = 1 V |
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20 |
μA |
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PZM3.0NB2A |
VR = 1 V |
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10 |
μA |
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PZM3.3NB2A |
VR = 1 V |
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5 |
μA |
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PZM3.6NB2A |
VR = 1 V |
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5 |
μA |
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PZM3.9NB2A |
VR = 1 V |
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3 |
μA |
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PZM4.3NB2A |
VR = 1 V |
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3 |
μA |
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PZM4.7NB2A |
VR = 1 V |
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3 |
μA |
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PZM5.1NB2A |
VR = 1.5 V |
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3 |
μA |
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PZM5.6NB2A |
VR = 2.5 V |
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2 |
μA |
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PZM6.2NB2A |
VR = 3.0 V |
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2 |
μA |
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PZM6.8NB2A |
VR = 3.5 V |
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2 |
μA |
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PZM7.5NB2A |
VR = 4.0 V |
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1 |
μA |
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PZM8.2NB2A |
VR = 5.0 V |
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700 |
nA |
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PZM9.1NB2A |
VR = 6.0 V |
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500 |
nA |
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PZM10NB2A |
VR = 7.0 V |
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200 |
nA |
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PZM11NB2A |
VR = 8.0 V |
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100 |
nA |
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PZM12NB2A |
VR = 9.0 V |
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100 |
nA |
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PZM13NB2A |
VR = 10.0 V |
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100 |
nA |
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PZM15NB2A |
VR = 11.0 V |
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70 |
nA |
1999 Jun 11 |
4 |