Philips PZM10NB2A, PZM3.0NB2A, PZM45.1B2A, PZM45.6B2A, PZM3.9NB2A Datasheet

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Philips PZM10NB2A, PZM3.0NB2A, PZM45.1B2A, PZM45.6B2A, PZM3.9NB2A Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D114

PZM-NA series

Voltage regulator double diodes

Product specification

 

1999 Jun 11

Supersedes data of 1999 Jun 02

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

Voltage regulator double diodes

PZM-NA series

 

 

 

 

FEATURES

Total power dissipation: max. 220 mW per diode

Small plastic package suitable for surface mounted design

Working voltage: nom. 2.4 V and 15 V (E24 range).

APPLICATIONS

General regulation functions.

DESCRIPTION

Low power general purpose voltage regulator double diodes in a SOT346 (SC59) plastic package, suitable for surface mounted design.

MARKING

PINNING

PIN

DESCRIPTION

 

 

1

cathode

 

 

2

cathode

 

 

3

anode

 

 

handbook, halfpage

3

3

1 2

1

2

MAM407

Top view

Fig.1 Simplified outline (SOT346; SC59) and symbol.

TYPE NUMBER

MARKING CODE

TYPE NUMBER

MARKING CODE

 

 

 

 

PZM2.4NBA

2A4

PZM6.2NB2A

6A2

 

 

 

 

PZM2.7NB2A

2A7

PZM6.8NB2A

6A8

 

 

 

 

PZM3.0NB2A

3A0

PZM7.5NB2A

7A5

 

 

 

 

PZM3.3NB2A

3A3

PZM8.2NB2A

8A2

 

 

 

 

PZM3.6NB2A

3A6

PZM9.1NB2A

9A1

 

 

 

 

PZM3.9NB2A

3A9

PZM10NB2A

10A

 

 

 

 

PZM4.3NB2A

4A3

PZM11NB2A

11A

 

 

 

 

PZM4.7NB2A

4A7

PZM12NB2A

12A

 

 

 

 

PZM5.1NB2A

5A1

PZM13NB2A

13A

 

 

 

 

PZM5.6NB2A

5A6

PZM15NB2A

15A

 

 

 

 

1999 Jun 11

2

Philips Semiconductors

 

 

 

Product specification

 

 

 

 

 

 

 

Voltage regulator double diodes

 

 

PZM-NA series

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 134).

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

 

MAX.

UNIT

 

 

 

 

 

 

 

Per diode

 

 

 

 

 

 

 

 

 

 

 

 

 

IF

continuous forward current

 

 

200

mA

IZSM

non-repetitive peak current

tp = 100 μs; square wave

 

 

see Table 1

 

P

power dissipation; see note 1

Tamb = 25 °C

 

220

mW

Tstg

storage temperature

 

65

 

+150

°C

Tj

operating junction temperature

 

 

150

°C

Note

1. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

Rth j-s

thermal resistance from junction to soldering point

one diode loaded; note 1

350

K/W

Rth j-a

thermal resistance from junction to ambient

one diode loaded; note 2

560

K/W

Notes

1.Solderpoint of cathode tab.

2.Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.

1999 Jun 11

3

Philips Semiconductors

 

 

Product specification

 

 

 

 

 

 

Voltage regulator double diodes

 

PZM-NA series

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

 

Tj = 25 °C unless otherwise specified.

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

 

MAX.

UNIT

 

 

 

 

 

 

VF

forward voltage

IF = 10 mA; see Fig.2

 

0.9

V

 

 

IF = 100 mA; see Fig.2

 

1.1

V

IR

reverse current

 

 

 

 

 

PZM2.4NBA

VR = 1 V

 

50

μA

 

PZM2.7NB2A

VR = 1 V

 

20

μA

 

PZM3.0NB2A

VR = 1 V

 

10

μA

 

PZM3.3NB2A

VR = 1 V

 

5

μA

 

PZM3.6NB2A

VR = 1 V

 

5

μA

 

PZM3.9NB2A

VR = 1 V

 

3

μA

 

PZM4.3NB2A

VR = 1 V

 

3

μA

 

PZM4.7NB2A

VR = 1 V

 

3

μA

 

PZM5.1NB2A

VR = 1.5 V

 

3

μA

 

PZM5.6NB2A

VR = 2.5 V

 

2

μA

 

PZM6.2NB2A

VR = 3.0 V

 

2

μA

 

PZM6.8NB2A

VR = 3.5 V

 

2

μA

 

PZM7.5NB2A

VR = 4.0 V

 

1

μA

 

PZM8.2NB2A

VR = 5.0 V

 

700

nA

 

PZM9.1NB2A

VR = 6.0 V

 

500

nA

 

PZM10NB2A

VR = 7.0 V

 

200

nA

 

PZM11NB2A

VR = 8.0 V

 

100

nA

 

PZM12NB2A

VR = 9.0 V

 

100

nA

 

PZM13NB2A

VR = 10.0 V

 

100

nA

 

PZM15NB2A

VR = 11.0 V

 

70

nA

1999 Jun 11

4

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