Panasonic MA3S781DG, MA3S781EG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Schottky Barrier Diodes (SBD)

MA3S781DG, MA3S781EG

Silicon epitaxial planar type

For high speed switching

For wave detection

■ Package

■ Features

• Code

• Two MA3S7810G is contained in one package

SSMini3-F3

• High-density mounting is possible

• Pin Name

• Low forward voltage VF

MA3S781DG

MA3S781EG

1: Cathode 1

1: Anode 1

2: Cathode 2

2: Anode 2

■ Absolute Maximum Ratings Ta = 25°C

3: Anode

3: Cathode

■ Marking Symbol

Parameter

Symbol

Rating

Unit

MA3S781DG: M2P

Reverse voltage

VR

30

V

MA3S781EG: M2R

Maximum peak reverse voltage

VRM

30

V

Forward current

Single

IF

30

mA

Double

20

■ Internal Connection

Peak forward current

Single

IFM

150

mA

3

3

Double

110

Junction temperature

Tj

125

°C

Storage temperature

Tstg

−55 to +125

°C

1

D

2

1

E

2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

VF1

IF = 1 mA

0.4

V

VF2

IF = 30 mA

1.0

Reverse current

IR

VR = 30 V

1

µA

Terminal capacitance

Ct

VR = 1 V, f = 1 MHz

1.5

pF

Reverse recovery time *

trr

IF = IR = 10 mA

1.0

ns

Irr = 1 mA, RL = 100 Ω

Detection efficiency

η

VIN = 3 V(peak) , f = 30 MHz

65

%

RL = 3.9 kΩ, CL = 10 pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2.This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit

Bias Application Unit (N-50BU)

A

Pulse Generator	Wave Form Analyzer
(PG-10N)	(SAS-8130)
Rs = 50 Ω	Ri = 50 Ω

Input Pulse

tr	tp
	t
	10%
VR	90%

tp = 2 µs

tr = 0.35 ns δ = 0.05

Output Pulse

	IF	trr
		t
		Irr = 1 mA
	IF	= 10 mA
	IR	= 10 mA
	RL = 100 Ω

Publication date: October 2007

SKH00203AED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3S781DG, MA3S781EG

IF VF

	103
	102								75°C 25°C
(mA)
F	10				Ta = 125°C							−20°C
I
current	1
Forward
	10−1
	10−2
	0		0.4					0.8			1.2
			Forward voltage VF								(V)

		IR Ta
	103
	102
A)			VR = 30 V
					10 V
(					1 V
R	10
I
current	1
Reverse

	10−1
	10−2
	−40	0	40	80	120	160	200
		Ambient temperature Ta				(°C)
	50		IF(AV) Ta
		Tj = 125°C
(mA)					IF
	40				tp
F(AV)					T
I			DC
(Average)	30
current	20
Forward	10
	0
	0		40	80	120	160
		Ambient temperature Ta				(°C)
2

IR VR

	103
	102
( A)											Ta = 125°C
R	10
I
current	1														75	°C
Reverse
	10−1														25°C
	10−2
	0		5		10		15		20		25				30

Reverse voltage VR (V)

Ct VR

(pF)	3.0
t
C	2.0
capacitance
Terminal	1.0
	0
	0		10		20		30

Reverse voltage VR (V)

SKH00203AED

		VF Ta
	1.6
(V)	1.2
F
V
voltageForward	0.8
			IF	= 30 mA
	0.4
					3 mA

1 mA

	0
	−40	0	40	80	120	160	200
		Ambient temperature Ta				(°C)
			IF(surge) tW
	103
					Ta = 25°C
(A)						IF(surge)
	102				tW
F(surge)
I
surge current	10
Forward	1
	10 −1	10 −1		1	10
		Pulse width			tW (ms)