NSC LM329DZ, LM329CZ, LM329CH, LM329BZ, LM329AH Datasheet
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March 2000
LM129/LM329
Precision Reference
General Description
The LM129 and LM329 family are precision multi-current temperature-compensated 6.9V zener references with dynamic impedances a factor of 10 to 100 less than discrete diodes. Constructed in a single silicon chip, the LM129 uses active circuitry to buffer the internal zener allowing the device to operate over a 0.5 mA to 15 mA range with virtually no change in performance. The LM129 and LM329 are available with selected temperature coefficients of 0.001, 0.002, 0.005 and 0.01%/ÊC. These references also have excellent long term stability and low noise.
A new subsurface breakdown zener used in the LM129 gives lower noise and better long-term stability than conventional IC zeners. Further the zener and temperature compensating transistor are made by a planar process so they are immune to problems that plague ordinary zeners. For example, there is virtually no voltage shift in zener voltage due to temperature cycling and the device is insensitive to stress on the leads.
The LM129 can be used in place of conventional zeners with improved performance. The low dynamic impedance simplifies biasing and the wide operating current allows the replacement of many zener types.
The LM129 is packaged in a 2-lead TO-46 package and is rated for operation over a −55ÊC to +125ÊC temperature range. The LM329 for operation over 0ÊC to 70ÊC is available in both a hermetic TO-46 package and a TO-92 epoxy package.
Features
n0.6 mA to 15 mA operating current
n0.6Ω dynamic impedance at any current
nAvailable with temperature coefficients of 0.001%/ÊC
n7µV wideband noise
n5% initial tolerance
n0.002% long term stability
nLow cost
nSubsurface zener
Connection Diagrams
Metal Can Package (T0±46) |
Plastic Package (TO-92) |
DS005714-6
Pin 2 is electrically connected to case
Bottom View
Order Number LM129AH, LM129AH/883, LM129BH,
LM129BH/883, LM129CH, LM329AH, LM329BH,
LM329CH or LM329DH
See NS Package H02A
DS005714-4
Bottom View
Order Number LM329BZ,
LM329CZ or LM329DZ
See NS Package Z03A
Reference Precision LM129/LM329
© 2000 National Semiconductor Corporation |
DS005714 |
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LM129/LM329
Typical Applications
Simple Reference
DS005714-1
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2 |
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
(Note 3)
Reverse Breakdown Current |
30 mA |
Forward Current |
2 mA |
Operating Temperature Range |
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LM129 |
−55ÊC to +125ÊC |
LM329 |
0ÊC to +70ÊC |
Storage Temperature Range |
−55ÊC to +150ÊC |
Soldering Information |
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TO-92 package: 10 sec. |
260ÊC |
TO-46 package: 10 sec. |
300ÊC |
Electrical Characteristics (Note 2)
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LM129A, B, C |
LM329A, B, C, D |
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Parameter |
Conditions |
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Units |
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Min |
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Typ |
Max |
Min |
Typ |
Max |
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Reverse Breakdown Voltage |
TA = 25ÊC, |
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0.6 mA ≤ IR ≤ 15 mA |
6.7 |
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6.9 |
7.2 |
6.6 |
6.9 |
7.25 |
V |
Reverse Breakdown Change |
TA = 25ÊC, |
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with Current (Note 4) |
0.6 mA ≤ IR ≤ 15 mA |
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9 |
14 |
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9 |
20 |
mV |
Reverse Dynamic Impedance |
TA = 25ÊC, IR = 1 mA |
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0.6 |
1 |
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0.8 |
2 |
Ω |
(Note 4) |
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RMS Noise |
TA = 25ÊC, |
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10 Hz ≤ F ≤ 10 kHz |
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7 |
20 |
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7 |
100 |
µV |
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Long Term Stability |
TA = 45ÊC ± 0.1ÊC, |
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(1000 hours) |
IR = 1 mA ± 0.3% |
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20 |
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20 |
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ppm |
Temperature Coefficient |
IR = 1 mA |
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LM129A, LM329A |
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6 |
10 |
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6 |
10 |
ppm/ÊC |
LM129B, LM329B |
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15 |
20 |
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15 |
20 |
ppm/ÊC |
LM129C, LM329C |
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30 |
50 |
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30 |
50 |
ppm/ÊC |
LM329D |
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50 |
100 |
ppm/ÊC |
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Change In Reverse Breakdown |
1 mA ≤ IR ≤ 15 mA |
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1 |
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1 |
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ppm/ÊC |
Temperature Coefficient |
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Reverse Breakdown Change |
1 mA ≤ IR ≤ 15 mA |
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12 |
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12 |
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mV |
with Current |
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Reverse Dynamic Impedance |
1 mA ≤ IR ≤ 15 mA |
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0.8 |
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1 |
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Ω |
Note 1: ªAbsolute Maximum Ratingsº indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the devicesi functional, but do not guarantee specific performance limits.
Note 2: These specifications apply for −55ÊC ≤ TA ≤ +125ÊC for the LM129 and 0ÊC ≤ TA ≤ +70ÊC for the LM329 unless otherwise specified. The maximum junction temperature for an LM129 is 150ÊC and LM329 is 100ÊC. For operating at elevated temperature, devices in TO-46 package must be derated based on a thermal resistance of 440ÊC/W junction to ambient or 80ÊC/W junction to case. For the TO-92 package, the derating is based on 180ÊC/W junction to ambient with 0.4 " leads from a PC board and 160ÊC/W junction to ambient with 0.125" lead length to a PC board.
Note 3: Refer to RETS129H for LM129 family military specifications.
Note 4: These changes are tested on a pulsed basis with a low duty-cycle. For changes versus temperature, compute in terms of tempco.
LM129/LM329
3 |
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