NSC LM336MX-5.0, LM336M-5.0, LM336Z-5.0, LM336BMX-5.0, LM336BM-5.0 Datasheet

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June 1999

LM136-5.0/LM236-5.0/LM336-5.0

5.0V Reference Diode

General Description

The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient 5.0V zener with 0.6Ω dynamic impedance. A third terminal on the LM136-5.0 allows the reference voltage and temperature coefficient to be trimmed easily.

The LM136-5.0 series is useful as a precision 5.0V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 5.0V makes it convenient to obtain a stable reference from low voltage supplies. Further, since the LM136-5.0 operates as a shunt regulator, it can be used as either a positive or negative voltage reference.

The LM136-5.0 is rated for operation over −55ÊC to +125ÊC while the LM236-5.0 is rated over a −25ÊC to +85ÊC temperature range. The LM336-5.0 is rated for operation over a

0ÊC to +70ÊC temperature range. See the connection diagrams for available packages. For applications requiring 2.5V see LM136-2.5.

Features

nAdjustable 4V to 6V

nLow temperature coefficient

nWide operating current of 600 µA to 10 mA

n0.6Ω dynamic impedance

n± 1% initial tolerance available

nGuaranteed temperature stability

nEasily trimmed for minimum temperature drift

nFast turn-on

nThree lead transistor package

Connection Diagrams

TO-92

Plastic Package

DS005716-4

Bottom View

Order Number LM236AZ-5.0, LM336Z-5.0 or LM336BZ-5.0

See NS Package Number Z03A

TO-46

Metal Can Package

DS005716-5

Bottom View

Order Number LM136H-5.0,

LM136H-5.0/883, LM236H-5.0,

LM136AH-5.0, LM136AH-5.0/883,

or LM236AH-5.0

See NS Package Number H03H

Diode Reference 0V.5 0.5-0/LM336.5-0/LM236.5-LM136

© 1999 National Semiconductor Corporation

DS005716

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Connection Diagrams (Continued)

SO Package

DS005716-7

Order Number LM336M-5.0 or LM336BM-5.0

See NS Package Number M08A

Typical Applications

5.0V Reference

5.0V Reference with Minimum

Trimmed 4V to 6V Reference

 

Temperature Coefficient

with Temperature Coefficient

 

 

Independent of Breakdown Voltage

DS005716-1

DS005716-3

* Does not affect temperature coefficient

DS005716-15

²Adjust to 5.00V

*Any silicon signal diode

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Reverse Current

15mA

Forward Current

10mA

Storage Temperature

−60ÊC to +150ÊC

Operating Temperature Range (Note 2)

 

LM136-5.0

−55ÊC to +150ÊC

LM236-5.0

−25ÊC to +85ÊC

LM336-5.0

0ÊC to +70ÊC

Soldering Information

 

TO-92 Package (10 sec.)

260ÊC

TO-46 Package (10 sec.)

300ÊC

SO Package

 

Vapor Phase (60 sec.)

215ÊC

Infrared (15 sec.)

220ÊC

See AN-450 ªSurface Mounting Methods and Their Effect on Product Reliabilityº (appendix D) for other methods of soldering surface mount devices.

Electrical Characteristics

(Note 3)

 

 

LM136A-5.0/LM236A-5.0

LM336B-5.0

 

Parameter

Conditions

LM136-5.0/LM236-5.0

LM336-5.0

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

Min

Typ

Max

Min

Typ

 

Max

 

 

 

 

 

 

 

 

 

 

 

Reverse Breakdown Voltage

TA=25ÊC, IR=1 mA

 

 

 

 

 

 

 

 

 

LM136-5.0/LM236-5.0/LM336-5.0

4.9

5.00

5.1

4.8

5.00

 

5.2

V

 

LM136A-5.0/LM236A-5.0, LM336B-5.0

4.95

5.00

5.05

4.90

5.00

 

5.1

V

Reverse Breakdown Change

TA=25ÊC,

 

6

12

 

6

 

20

mV

With Current

600 µAIR10 mA

 

 

 

 

 

 

 

 

Reverse Dynamic Impedance

TA=25ÊC, IR=1 mA, f = 100 Hz

 

0.6

1.2

 

0.6

 

2

Ω

Temperature Stability

VR Adjusted 5.00V

 

 

 

 

 

 

 

 

(Note 4)

IR=1 mA, (Figure 2)

 

 

 

 

 

 

 

 

 

0ÊCTA70ÊC (LM336-5.0)

 

 

 

 

4

 

12

mV

 

−25ÊC TA+85ÊC (LM236-5.0)

 

7

18

 

 

 

 

mV

 

−55ÊC TA+125ÊC (LM136-5.0)

 

20

36

 

 

 

 

mV

Reverse Breakdown Change

600 µAIR10 mA

 

6

17

 

6

 

24

mV

With Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Adjustment Range

Circuit of Figure 1

 

±1

 

 

±1

 

 

V

 

 

 

 

 

 

 

 

 

 

Reverse Dynamic Impedance

IR = 1 mA

 

0.8

1.6

 

0.8

 

2.5

Ω

Long Term Stability

TA=25ÊC±0.1ÊC, IR=1 mA, t = 1000 hrs

 

20

 

 

20

 

 

ppm

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified operating conditions.

Note 2: For elevated temperature operation, Tj max is:

LM136 150ÊC

LM236 125ÊC

LM336 100ÊC

Thermal Resistance

 

TO-92

TO-46

SO-8

 

 

 

 

 

 

 

θja (Junction to Ambient)

 

180ÊC/W (0.4" Leads)

440ÊC/W

165ÊC/W

 

 

 

170ÊC/W (0.125"

 

 

 

 

 

Leads)

 

 

 

 

 

 

 

 

 

θja (Junction to Case)

 

N/A

80ÊC/W

N/A

 

Note 3: Unless otherwise specified,

the LM136-5.0 is specified

from −55ÊC TA+125ÊC, the LM236-5.0 from −25ÊC TA+85ÊC and the LM336-5.0 from

0ÊCTA+70ÊC.

 

 

 

 

Note 4: Temperature stability for the LM336 and LM236 family is guaranteed by design. Design limits are guaranteed (but not 100% percent production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability is defined as the maximum charge in VREF from 25ÊC to TA(min) or TA(max).

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NSC LM336MX-5.0, LM336M-5.0, LM336Z-5.0, LM336BMX-5.0, LM336BM-5.0 Datasheet

Typical Performance Characteristics

Reverse Voltage Change

Zener Noise Voltage

Dynamic Impedance

DS005716-17 DS005716-18 DS005716-19

Response Time Reverse Characteristics

 

DS005716-20

 

DS005716-21

Temperature Drift

Forward Characteristics

DS005716-22

DS005716-23

Application Hints

The LM136-5.0 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance.

Figure 1 shows an LM136-5.0 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry.

If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment potentiometer as shown in Figure 2. When the device is adjusted to 5.00V the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136-5.0. It is usually sufficient to mount the diodes near the LM136-5.0 on the printed circuit board. The absolute resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment range, fixed resistors should be connected in series with the pot to make pot setting less critical.

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