December 1994
LM3045/LM3046/LM3086 Transistor Arrays
General Description
The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3045 is supplied in a 14-lead cavity dual- in-line package rated for operation over the full military temperature range. The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range.
Features
YTwo matched pairs of transistors
VBE matched g5 mV
Input offset current 2 mA max at IC e 1 mA
YFive general purpose monolithic transistors
YOperation from DC to 120 MHz
YWide operating current range
Y Low noise figure Y Full military
temperature range (LM3045)
Applications
Y General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF
YCustom designed differential amplifiers
YTemperature compensated amplifiers
Schematic and Connection Diagram
Dual-In-Line and Small Outline Packages
TL/H/7950 ± 1
Top View
Order Number LM3045J, LM3046M, LM3046N or LM3086N
See NS Package Number J14A, M14A or N14A
Arrays Transistor LM3045/LM3046/LM3086
C1995 National Semiconductor Corporation |
TL/H/7950 |
RRD-B30M115/Printed in U. S. A. |
Absolute Maximum Ratings (TA e 25§C)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications. |
LM3045 |
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LM3046/LM3086 |
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Each |
Total |
Each |
Total |
Units |
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Transistor |
Package |
Transistor |
Package |
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Power Dissipation: |
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TA e 25§C |
300 |
750 |
300 |
750 |
mW |
TA e 25§C to 55§C |
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300 |
750 |
mW |
TA l 55§C |
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Derate at 6.67 |
mW/§C |
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TA e 25§C to 75§C |
300 |
750 |
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mW |
TA l 75§C |
Derate at 8 |
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mW/§C |
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Collector to Emitter Voltage, VCEO |
15 |
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15 |
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V |
Collector to Base Voltage, VCBO |
20 |
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20 |
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V |
Collector to Substrate Voltage, VCIO (Note 1) |
20 |
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20 |
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V |
Emitter to Base Voltage, VEBO |
5 |
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5 |
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V |
Collector Current, IC |
50 |
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50 |
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mA |
Operating Temperature Range |
b55§C to a125§C |
b40§C to a85§C |
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Storage Temperature Range |
b65§C to a150§C |
b65§C to a85§C |
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Soldering Information |
260§C |
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260§C |
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Dual-In-Line Package Soldering (10 Sec.) |
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Small Outline Package |
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215§C |
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Vapor Phase (60 Seconds) |
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Infrared (15 Seconds) |
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220§C |
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See AN-450 ``Surface Mounting Methods and Their Effect on Product Reliability'' for other methods of soldering surface mount devices.
Electrical Characteristics (TA e 25§C unless otherwise specified)
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Limits |
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Limits |
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Parameter |
Conditions |
LM3045, LM3046 |
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LM3086 |
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Units |
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Min |
Typ |
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Max |
Min |
Typ |
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Max |
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Collector to Base Breakdown Voltage (V(BR)CBO) |
IC e 10 mA, IE e 0 |
20 |
60 |
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20 |
60 |
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V |
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Collector to Emitter Breakdown Voltage (V(BR)CEO) |
IC e 1 mA, IB e 0 |
15 |
24 |
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15 |
24 |
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V |
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Collector to Substrate Breakdown |
IC e 10 mA, ICI e 0 |
20 |
60 |
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20 |
60 |
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V |
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Voltage (V(BR)CIO) |
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Emitter to Base Breakdown Voltage (V(BR)EBO) |
IE 10 mA, IC e 0 |
5 |
7 |
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5 |
7 |
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V |
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Collector Cutoff Current (ICBO) |
VCB e 10V, IE e 0 |
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0.002 |
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40 |
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0.002 |
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100 |
nA |
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Collector Cutoff Current (ICEO) |
VCE e 10V, IB e 0 |
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0.5 |
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5 |
mA |
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Static Forward Current Transfer |
VCE e 3V |
IC e 10 mA |
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100 |
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100 |
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Ratio (Static Beta) (hFE) |
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IC e 1 mA |
40 |
100 |
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40 |
100 |
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Ð IC e 10 mA |
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54 |
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54 |
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Input Offset Current for Matched |
VCE e 3V, IC e 1 mA |
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0.3 |
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2 |
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mA |
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Pair Q1 and Q2 lIO1 b IIO2l |
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Base to Emitter Voltage (VBE) |
VCE e 3V IE e 1 mA |
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0.715 |
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0.715 |
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Ð IE e 10 mA |
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V |
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0.800 |
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0.800 |
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Magnitude of Input Offset Voltage for |
VCE e 3V, IC e 1 mA |
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0.45 |
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5 |
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mV |
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Differential Pair lVBE1 b VBE2l |
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Magnitude of Input Offset Voltage for Isolated |
VCE e 3V, IC e 1 mA |
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Transistors lVBE3 b VBE4l, lVBE4 b VBE5l, |
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0.45 |
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5 |
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mV |
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lVBE5 b VBE3l |
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Temperature Coefficient of Base to |
VCE e 3V, IC e 1 mA |
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b1.9 |
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b1.9 |
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mV/§C |
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Emitter Voltage |
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DVBE |
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# |
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J |
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DT |
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Collector to Emitter Saturation Voltage (VCE(SAT)) |
IB e 1 mA, IC e 10 mA |
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0.23 |
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0.23 |
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V |
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Temperature Coefficient of |
VCE e 3V, IC e 1 mA |
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mV/§C |
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Input Offset Voltage |
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DV10 |
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1.1 |
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# |
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DT |
J |
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Note 1: The collector of each transistor of the LM3045, LM3046, and LM3086 is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2
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