3.0 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-54063
•Ultra-Miniature Package
•Single 5 V Supply (29Ê mA)
•21.5 dB Gain (1.9 GHz)
•8.0 dBm P1dB (1.9 GHz)
•Positive Gain Slope
•Unconditionally Stable
•IF Amplifier for DBS Downconverter, Cellular, Cordless, Special Mobile Radio, PCS, ISM, and Wireless LAN Applications
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
GND 1 |
54 |
6 |
OUTPUT |
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and Vd |
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GND |
2 |
5 |
GND |
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INPUT |
3 |
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4 |
VCC |
Note:
Package marking provides orientation
Equivalent Circuit |
and identification. |
(Simplified) |
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Vd |
RF |
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INPUT |
RF |
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OUTPUT |
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and Vd |
GROUND |
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Hewlett-Packard’s INA-54063 is a Silicon monolithic amplifier that offers excellent gain and power output for applications to
3.0Ê GHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space of a SOT-143 package.
With its wide bandwidth and high linearity, the INA-54063 is an excellent candidate for DBS IF applications. It also features a unique gain curve which increases over the range from 1 to 2Ê GHz. This gain slope compensates for the gain rolloff found in typical receiver systems.
The INA-54063 is fabricated using HP’s 30 GHz fMAX ISOSAT™ Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metalization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.
6-163 |
5965-5364E |
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Absolute |
Symbol |
Parameter |
Units |
Maximum[1] |
Vd |
Supply Voltage, to Ground |
V |
12 |
Pin |
CW RF Input Power |
dBm |
13 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to 150 |
Thermal Resistance[2]:
θj-c=165°C/W
Notes:
1.Operation of this device above any one of these limits may cause permanent damage.
2.TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).
Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 5 V, unless noted
Symbol |
Parameters and Test Conditions |
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Units |
Min. |
Typ. |
Max. |
Std. |
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Dev.[1] |
G |
P |
PowerGain(|S |2) |
f=1900MHz |
dB |
19 |
21.5 |
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0.7 |
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21 |
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NF |
Noise Figure |
f=1900MHz |
dB |
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5.0 |
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0.4 |
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P1dB |
Output Power at 1 dB Gain Compression |
f=1900MHz |
dBm |
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8.0 |
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IP3 |
Third Order Intercept Point |
f=1900MHz |
dBm |
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17 |
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f=2150MHz |
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15.7 |
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VSWRin |
Input VSWR |
f=1900MHz |
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1.4 |
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VSWRout |
Output VSWR |
f=1900MHz |
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2.4 |
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Id |
Device Current |
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mA |
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29 |
36 |
1.8 |
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td |
Group Delay |
f=1900MHz |
ps |
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272 |
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Note:
1.Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specification.
6-164
TC = 25°C, ZO = 50 Ω, Vd = 5 V, unless noted
25 |
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7 |
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6 V |
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(dB) |
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4 V |
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20 |
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6 V |
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(dB)GAIN |
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FIGURENOISE |
6 |
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5 V |
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5 V |
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15 |
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5 |
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4 V |
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3 |
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0.3 |
0.6 |
0.9 |
1.2 |
1.5 |
1.8 |
2.1 |
2.4 |
2.7 |
3 |
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0.3 |
0.6 |
0.9 |
1.2 |
1.5 |
1.8 |
2.1 |
2.4 |
2.7 |
3 |
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FREQUENCY (GHz) |
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FREQUENCY (GHz) |
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Figure 1. Gain vs. Frequency and |
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Figure 2. Noise Figure vs. Frequency |
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Voltage. |
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and Voltage. |
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22 |
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20 |
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(dB) |
18 |
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16 |
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GAIN |
TA = +85°C |
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14 |
TA = +25°C |
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TA = –40°C |
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12 |
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10
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and Temperature.
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3 |
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2.5 |
VSWR out |
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VSWR |
2 |
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1.5 |
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1 |
VSWR in |
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0.5
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
FREQUENCY (GHz)
Figure 7. Input and Output VSWR vs. Frequency.
7.5
7TA = +85°C TA = +25°C
(dB) |
6.5 |
TA = –40°C |
6 |
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FIGURE |
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5.5 |
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NOISE |
5 |
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4.5 |
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4 |
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3.5 |
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3
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and Temperature.
45
40TA = +85°C TA = +25°C
35 TA = –40°C
(mA) |
30 |
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25 |
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I |
20 |
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d |
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15 |
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10 |
5
0
0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
Vd (V)
Figure 8. Supply Current vs. Voltage and Temperature.
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16 |
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6 V |
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(dBm) |
12 |
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5 V |
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1 dB |
8 |
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P |
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4 V |
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4 |
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 FREQUENCY (GHz)
Figure 3. Output Power for 1 dB Gain Compression vs. Frequency and Voltage.
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14 |
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12 |
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(dBm) |
10 |
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8 |
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dB |
6 |
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1 |
TA = +85°C |
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P |
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4 |
TA = +25°C |
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2 |
TA = –40°C |
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0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
FREQUENCY (GHz)
Figure 6. Output Power for P1dB Gain Compression vs. Frequency and Temperature.
6-165