HP IAM-81008-TR1 Datasheet

Silicon Bipolar MMIC 5Ê GHz

Active Double Balanced

Mixer/IFÊ Amp

Technical Data

Features

•RF-IF Conversion Gain From 0.05–5 GHz

•IF Conversion Gain From DC to 1 GHz

•Low Power Dissipation:

65Ê mW at V = 5 V Typical

CC

•Single Polarity Bias Supply:

VCC = 4 to 8 V

•Load-insensitive Performance

•Conversion Gain Flat Over Temperature

•Low LO Power Requirements:

–5Ê dBm Typical

•Low Cost Plastic Surface Mount Package

IAM-81008

Typical applications include frequency down conversion, modulation, demodulation and phase detection. Markets include fiber-optics, GPS satelite navigation, mobile radio, and battery powered communications receivers.

The IAM series of Gilbert multiplierbased frequency converters is fabricated using HP’s 10Ê GHz, Tf, 25Ê GHz fMAX ISOSAT™-I silicon bipolar process. This process uses nitride self alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

Plastic SO-8 Package

Pin Configuration

GROUND AND
THERMAL		1					8		GROUND AND
CONTACT									THERMAL
VCC1		2					7		CONTACT
GROUND		3					6		RFOUT AND VCC2
RFIN									POWER CONTROL
		4					5

Description

The IAM-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation at RF and LO frequencies less than 50 MHz can be achieved using optional external capacitors to ground. The IAM-81008 is particularly well suited for applications that require load-insensitive conversion and good spurious signal suppression with minimum LO and bias power consumption.

Typical Biasing Configuration and

Functional Block Diagram

			Optional Low
			Frequencies
	Cblock	Cblock	RF Ground
		8
	1
	IF Output
	2	7	VCC = 5 V
Vee	= 0 V	6
	3
	4	5	Optional Low
	RF Input		LO Ground
	Cblock	Cblock

LO Input

Note: No external baluns are required.

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5965-9107E

IAM-81008 Absolute Maximum Ratings

Parameter	Absolute Maximum[1]
Device Voltage	10 V
Power Dissipation2,3	300mW
RF Input Power	+14dBm
LO Input Power	+14dBm
Junction Temperature	150°C
Storage Temperature	–65 to 150°C

Thermal Resistance:

θjc = 80°C/W

Notes:

1.Permanent damage may occur if any of these limits are exceeded.

2.TCASE = 25°C.

3.Derate at 4.4 mW/°C for TC > 82°C.

IAM-81008 Part Number Ordering Information

Part Number	Devices Per Reel	Reel Size
IAM-81008-TR1	1000	7"

For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.

IAM-81008 Electrical Specifications[1], T		A	= 25°C
Symbol	Parameters and Test Conditions: Vcc = 5 V, ZO = 50 Ω, LO =–5 dBm, RF = –20 dBm			Units	Min.	Typ.	Max.
GC	Conversion Gain		RF = 2 GHz, LO = 1.75 GHz	dB	6.0	8.5	10
F3 dBRF	RF Bandwidth (GC 3 dB Down)		IF = 250 MHz	GHz		3.5
F3 dB IF	IF Bandwidth (GC 3 dB Down)		LO = 2 GHz	GHz		0.6
P1 dB	IF Output Power at 1 dB Gain Compression		RF = 2 GHz, LO = 1.75 GHz	dBm		–6
IP3	IF Output Third Order Intercept Point		RF = 2 GHz, LO = 1.75 GHz	dBm		3
NF	SSB Noise Figure		RF = 2 GHz, LO = 1.75 GHz	dB		17
	RF Port VSWR		f = 0.05 to 3.5 GHz			1.5:1
VSWR	LO Port VSWR		f = 0.05 to 3.5 GHz			2.0:1
	IF Port VSWR		f < 1 GHz			1.5:1
RFif	RF Feedthrough at IF Port		RF = 2 GHz, LO = 1.75 GHz	dBc		–25
LOif	LO Leakage at IF Port		LO = 1.75 GHz	dBm		–25
LOrf	LO Leakage at RF Port		LO = 1.75 GHz	dBm		–30
ICC	Supply Current			mA	10	13	16

Note:

1.The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on the following page.

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