HP INA-54063-TR1, INA-54063-BLK Datasheet

3.0 GHz Low Noise Silicon MMIC

Amplifier

Technical Data

INA-54063

Features

•Ultra-Miniature Package

•Single 5 V Supply (29Ê mA)

•21.5 dB Gain (1.9 GHz)

•8.0 dBm P1dB (1.9 GHz)

•Positive Gain Slope

•Unconditionally Stable

Applications

•IF Amplifier for DBS Downconverter, Cellular, Cordless, Special Mobile Radio, PCS, ISM, and Wireless LAN Applications

Surface Mount Package

SOT-363 (SC-70)

Pin Connections and

Package Marking

	GND 1		54	6	OUTPUT
					and Vd
	GND	2		5	GND
	INPUT	3		4	VCC

Note:

Package marking provides orientation

Equivalent Circuit	and identification.
(Simplified)
	Vd
RF
INPUT	RF
	OUTPUT
	and Vd
GROUND

Description

Hewlett-Packard’s INA-54063 is a Silicon monolithic amplifier that offers excellent gain and power output for applications to

3.0Ê GHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space of a SOT-143 package.

With its wide bandwidth and high linearity, the INA-54063 is an excellent candidate for DBS IF applications. It also features a unique gain curve which increases over the range from 1 to 2Ê GHz. This gain slope compensates for the gain rolloff found in typical receiver systems.

The INA-54063 is fabricated using HP’s 30 GHz fMAX ISOSAT™ Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metalization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.

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5965-5364E

INA-54063 Absolute Maximum Ratings

			Absolute
Symbol	Parameter	Units	Maximum[1]
Vd	Supply Voltage, to Ground	V	12
Pin	CW RF Input Power	dBm	13
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Thermal Resistance[2]:

θj-c=165°C/W

Notes:

1.Operation of this device above any one of these limits may cause permanent damage.

2.TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).

Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 5 V, unless noted

Symbol		Parameters and Test Conditions		Units	Min.	Typ.	Max.	Std.
								Dev.[1]
G	P	PowerGain(|S |2)	f=1900MHz	dB	19	21.5		0.7
		21
NF		Noise Figure	f=1900MHz	dB		5.0		0.4
P1dB		Output Power at 1 dB Gain Compression	f=1900MHz	dBm		8.0
IP3		Third Order Intercept Point	f=1900MHz	dBm		17
			f=2150MHz			15.7
VSWRin		Input VSWR	f=1900MHz			1.4
VSWRout		Output VSWR	f=1900MHz			2.4
Id		Device Current		mA		29	36	1.8
td		Group Delay	f=1900MHz	ps		272

Note:

1.Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specification.

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INA-54063 Typical Performance

TC = 25°C, ZO = 50 Ω, Vd = 5 V, unless noted

25																							8
																							7
														6 V								(dB)																	4 V
20
																																						6 V
(dB)GAIN																						FIGURENOISE	6
														5 V																								5 V
15																							5
														4 V
																							4
10																							3
0.3		0.6		0.9		1.2		1.5		1.8		2.1		2.4			2.7			3			0.3		0.6		0.9		1.2		1.5		1.8		2.1		2.4			2.7			3
					FREQUENCY (GHz)																							FREQUENCY (GHz)
Figure 1. Gain vs. Frequency and																							Figure 2. Noise Figure vs. Frequency
Voltage.																							and Voltage.

		22
		20
	(dB)	18
		16
	GAIN		TA = +85°C
		14	TA = +25°C
			TA = –40°C
		12

10

0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3

FREQUENCY (GHz)

Figure 4. Gain vs. Frequency and Temperature.

	3
	2.5	VSWR out
VSWR	2
	1.5
	1	VSWR in

0.5

0

0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3

FREQUENCY (GHz)

Figure 7. Input and Output VSWR vs. Frequency.

7.5

7TA = +85°C TA = +25°C

(dB)	6.5	TA = –40°C
	6
FIGURE
	5.5
NOISE	5
	4.5
	4
	3.5

3

0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3

FREQUENCY (GHz)

Figure 5. Noise Figure vs. Frequency and Temperature.

45

40TA = +85°C TA = +25°C

35 TA = –40°C

	(mA)	30
		25
	I	20
	d
		15
		10

5

0

0

1

2

3

4

5

6

7

Vd (V)

Figure 8. Supply Current vs. Voltage and Temperature.

		16
		6 V
	(dBm)	12
		5 V
	1 dB	8
	P
		4 V
		4

0

0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 FREQUENCY (GHz)

Figure 3. Output Power for 1 dB Gain Compression vs. Frequency and Voltage.

	14
	12
(dBm)	10
	8
dB	6
1		TA = +85°C
P
	4	TA = +25°C
	2	TA = –40°C

0

0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3

FREQUENCY (GHz)

Figure 6. Output Power for P1dB Gain Compression vs. Frequency and Temperature.

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