HP INA-52063-TR1, INA-52063-BLK Datasheet

1.5 GHz Low Noise Silicon

MMIC Amplifier

Technical Data

INA-52063

Features

•Ultra-Miniature Package

•Single 5 V Supply (30 mA)

•22 dB Gain

•8 dBm P1dB

•Unconditionally Stable

Applications

•Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner Applications

Surface Mount SOT-363

(SC-70) Package

Pin Connections and

Package Marking

GND 2		52	6	OUTPUT
				and VCC
GND	1		5	GND 3
INPUT	3		4	VCC

Note: Package marking provides orientation and identification.

Equivalent Circuit

(Simplified)
VCC	RF
	OUTPUT
	& VCC
RF
INPUT
	GROUND 1
GROUND 2	GROUND 3
5965-9681E	6-156

Description

Hewlett-Packard’s INA-52063 is a Silicon monolithic amplifier that offers excellent gain and power output for applications to

1.5 GHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space of a SOT-143 package.

The INA-52063 is fabricated using

HP’s 30 GHz fMAX ISOSATTM Silicon bipolar process which

uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.

Absolute Maximum Ratings

			Absolute
Symbol	Parameter	Units	Maximum[1]
VCC	Supply Voltage, to Ground	V	12
Pin	CW RF Input Power	dBm	+13
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Thermal Resistance[2]:

θj-c =170°C/W

Notes:

1.Operation of this device above any one of these limits may cause permanent damage.

2.TC = 25°C (TC is defined to be the temperature at the package pins where

contact is made to the circuit board)

INA-52063 Electrical Specifications, TC = 25°C, ZO = 50 Ω, VCC = 5 V, unless noted

Symbol	Parameters and Test Conditions		Units	Min.	Typ.	Max.
G	PowerGain(|S |2)	f = 900 MHz	dB	20	22
p	21
NF	Noise Figure	f = 900 MHz	dB		4.0
P1dB	Output Power at 1 dB Gain Compression	f = 900 MHz	dBm		+8
IP3	Third Order Intercept Point	f = 900 MHz	dBm		+20
IP3	Third Order Intercept Point	f=2100MHz	dBm		+15
VSWR	Input VSWR	f = 900 MHz			1.4
	Output VSWR	f = 900 MHz			1.3
ICC	Device Current		mA		30	38
ιd	Group Delay	f = 900 MHz	ps		238

6-157

INA-52063 Typical Performance, TC = 25°C, ZO = 50 Ω, VCC = 5 V, unless noted

	24.0
	23.0											5.5 V
												5.0 V
	22.0											4.5 V
(dB)	21.0
	20.0
GAIN
	19.0
	18.0
	17.0
	16.0
	15.0
	0.05		0.65		1.25		1.85					2.45

FREQUENCY (GHz)

NOISE FIGURE (dB)

6.0

5.5 V 5.5 5.0 V 4.5 V

5.0

4.5

4.0

3.5

0.09 0.2 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6

FREQUENCY (GHz)

P1dB (dBm)

12.0

11.0

10.0

9.0

8.0

7.0

6.0

5.0

4.0

5.5 V 5.0 V

3.0 4.5 V

2.0

0.050.30 0.60 1.20 1.80 2.40

FREQUENCY (GHz)

Figure 1. Gain vs. Frequency and Voltage.

Figure 2. Noise Figure vs. Frequency and Voltage.

Figure 3. Output Power for 1 dB Gain Compression vs. Frequency and Voltage.

	24.0
	23.0									-40 °C
										+25 °C
	22.0									+85 °C
(dB)	21.0
	20.0
GAIN
	19.0
	18.0
	17.0
	16.0
	15.0
	0.05		0.60		1.20		1.80					2.40

FREQUENCY (GHz)

NOISE FIGURE (dB)

7.0

-40 °C 6.5 +25 °C +85 °C

6.0

5.5

5.0

4.5

4.0

3.5

3.0

0.05 0.40 0.80 1.20 1.60 2.00 2.40

FREQUENCY (GHz)

P1dB (dBm)

12

-40 °C 11 +25 °C +85 °C

10

9

8

7

6

5

4

0.050.30 0.60 1.20 1.80 2.40

FREQUENCY (GHz)

Figure 4. Gain vs. Frequency and Temperature.

	2.2
	2.0			VSWR IN
				VSWR OUT
(dB)	1.8
	1.6
VSWR
	1.4
	1.2
	1.0

0.0	0.4	0.7	1.1	1.4	1.8	2.1	2.5
5	0	5	0	5	0	5	0

FREQUENCY (GHz)

Figure 7. Input and Output VSWR vs. Frequency.

Figure 5. Noise Figure vs. Frequency and Temperature.

	60
	50					-40 °C
						+25 °C
						+85 °C
(mA)	40
	30
CC
I	20
	10
	0
	0.0		1.0			2.0		3.0			4.0		5.0		6.0		7.0

VCC (V)

Figure 8. Supply Current vs. Voltage and Temperature.

Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Temperature.

6-158