1 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-50311
Features |
SOT-143 Surface Mount |
• Internally Biased, Single 5 V |
Package |
Supply (17 mA) |
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•19 dB Gain
•3.6 dB NF
• Unconditionally Stable
Applications |
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• Amplifier for Cellular, |
Pin Connections and |
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Cordless, Special Mobile |
Package Marking |
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Radio, PCS, ISM, Wireless |
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LAN, and TV Tuner |
INPUT |
N50 |
GND |
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Applications |
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VCC |
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OUTPUT |
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VCC |
RF |
RF |
OUTPUT |
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INPUT |
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GROUND |
5963-6680E |
6-146 |
Hewlett-Packard’s INA-50311 is a Silicon monolithic amplifier that offers excellent gain and noise figure for applications to 1.0 GHz. Packaged in a miniature SOT-143 package, it requires very little board space.
The INA-50311 uses a topology which is internally biased, eliminating the need for external components and providing decreased sensitivity to ground inductance.
The INA-50311 is fabricated using
HP’s 30 GHz fMAX ISOSATTM Silicon bipolar process which
uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.
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Absolute |
Symbol |
Parameter |
Units |
Maximum[1] |
VCC |
Device Voltage, to ground |
V |
12 |
Pin |
CW RF Input Power |
dBm |
+13 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to 150 |
Thermal Resistance[2]:
θjc=550°C/W
Notes:
1.Operation of this device above any one of these limits may cause permanent damage.
2.TC = 25°C (TC is defined to be the temperature at the package pins where
contact is made to the circuit board).
INA-50311 Electrical Specifications[3], TC = 25°C, ZO = 50 Ω, VCC = 5 V
Symbol |
Parameters and Test Conditions |
Units |
Min. |
Typ. |
Max. |
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G |
PowerGain(|S |2) |
f = 900 MHz |
dB |
16.5 |
19 |
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p |
21 |
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NF |
Noise Figure |
f = 900 MHz |
dB |
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3.6 |
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P1dB |
Output Power at 1 dB Gain Compression |
f = 900 MHz |
dBm |
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0 |
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IP3 |
Third Order Intercept Point |
f = 900 MHz |
dBm |
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+10 |
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VSWR |
Input VSWR |
f = 900 MHz |
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1.5 |
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Output VSWR |
f = 900 MHz |
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1.2 |
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Icc |
Device Current |
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mA |
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17 |
22 |
ιd |
Group Delay |
f = 900 MHz |
ps |
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320 |
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INA-50311 Typical Scattering Parameters[3], T = 25°C, Z |
O |
= 50 Ω, V = 5 V |
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C |
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CC |
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Freq. |
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S11 |
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S21 |
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S12 |
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S22 |
K |
GHz |
Mag |
Ang |
dB |
Mag |
Ang |
dB |
Mag |
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Ang |
Mag |
Ang |
Factor |
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0.05 |
0.12 |
-2 |
22.2 |
12.82 |
-6 |
-31.9 |
0.025 |
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5 |
0.08 |
-11 |
1.68 |
0.10 |
0.12 |
-5 |
22.2 |
12.81 |
-12 |
-31.7 |
0.026 |
|
9 |
0.07 |
-24 |
1.63 |
0.20 |
0.12 |
-10 |
22.1 |
12.80 |
-24 |
-31.4 |
0.027 |
|
16 |
0.07 |
-44 |
1.59 |
0.30 |
0.14 |
-16 |
22.1 |
12.68 |
-36 |
-31.1 |
0.028 |
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23 |
0.08 |
-62 |
1.55 |
0.40 |
0.15 |
-25 |
21.9 |
12.45 |
-49 |
-30.6 |
0.030 |
|
30 |
0.09 |
-78 |
1.48 |
0.50 |
0.16 |
-32 |
21.7 |
12.12 |
-61 |
-30.0 |
0.032 |
|
36 |
0.09 |
-94 |
1.44 |
0.60 |
0.17 |
-45 |
21.3 |
11.65 |
-74 |
-29.3 |
0.034 |
|
42 |
0.10 |
-107 |
1.42 |
0.70 |
0.18 |
-57 |
20.9 |
11.04 |
-87 |
-28.5 |
0.038 |
|
47 |
0.11 |
-120 |
1.36 |
0.80 |
0.19 |
-71 |
20.3 |
10.35 |
-99 |
-27.7 |
0.041 |
|
51 |
0.11 |
-131 |
1.35 |
0.90 |
0.19 |
-84 |
19.6 |
9.57 |
-111 |
-26.9 |
0.045 |
|
54 |
0.11 |
-141 |
1.34 |
1.00 |
0.20 |
-98 |
18.9 |
8.78 |
-122 |
-26.0 |
0.050 |
|
56 |
0.11 |
-149 |
1.32 |
1.20 |
0.21 |
-122 |
17.2 |
7.28 |
-143 |
-24.3 |
0.061 |
|
59 |
0.11 |
-163 |
1.31 |
1.40 |
0.21 |
-143 |
15.5 |
5.97 |
-161 |
-22.8 |
0.072 |
|
60 |
0.11 |
-172 |
1.33 |
1.60 |
0.21 |
-162 |
13.8 |
4.92 |
-176 |
-21.5 |
0.084 |
|
60 |
0.10 |
-179 |
1.37 |
1.80 |
0.22 |
-177 |
12.2 |
4.08 |
169 |
-20.4 |
0.095 |
|
58 |
0.10 |
175 |
1.42 |
2.00 |
0.22 |
170 |
10.7 |
3.43 |
157 |
-19.5 |
0.106 |
|
55 |
0.10 |
172 |
1.49 |
2.20 |
0.21 |
158 |
9.3 |
2.92 |
145 |
18.5 |
0.119 |
|
54 |
0.10 |
166 |
1.55 |
2.40 |
0.20 |
149 |
8.1 |
2.53 |
134 |
-17.9 |
0.127 |
|
50 |
0.11 |
163 |
1.65 |
2.50 |
0.20 |
146 |
7.5 |
2.37 |
129 |
-17.7 |
0.131 |
|
49 |
0.12 |
160 |
1.69 |
Note:
3. Reference plane per Figure 9 in Applications Information section.
6-147