ROHM EMB11, IMB11A, UMB11N Schematic [ru]

EMB11 / UMB11N / IMB11A

Transistors

General purpose
(dual digital transistors)

EMB1 1 / UMB11N / IMB11A

zFeatures

1) Two DT A114E chips in a EMT or UMT or SMT
package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor elements are independent, eliminating
interference.

4) Mounting cost and area can be cut in half.

zStructure

Epitaxial planar type
PNP silicon transistor (Built-in resistor type)

The following characteristics apply to both DTr

2.

DTr

1 and

zEquivalent circuit

zExternal dimensions (Unit : mm)

EMB11

(3)

(4)

0.5

1.0

1.6

(2)(5)

ROHM : EMT6

UMB11N

ROHM : UMT6
EIAJ : SC-88

0.22

0.13

Abbreviated symbol : B11

)

5

(

0.2

0.15

0.1Min.

Abbreviated symbol : B11

0.5

(1)

(6)

1.2

1.6

0.5

Each lead has same dimensions

)

)

3

4

(

(

)

6

(

0.65

)

2

(

1.3

)

1

(

0.65

1.25

2.1

0.9

0.7

0to0.1

Each lead has same dimensions

2.0

EMB11 / UMB11N IMB11A

R1=10kΩ

2

=10kΩ

R

DTr

2

(3) (2) (1)

R

1

R

2

DTr

R

2

R

1

(4) (5) (6)

1

DTr

2

(4) (5) (6)

R

1

R

2

DTr

R

2

R

1

(3) (2) (1)

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Limits Unit

Supply voltage

Input voltage

Output current

Power
dissipation

EMB11, UMB11N

IMB11A
Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

V

V

C (Max.)

I

Pd

CC

IN

I

O

−50 V

−40

10

−50

−100

150 (TOTAL)
300 (TOTAL)

Tj 150 ˚C

Tstg −55 to +150 ˚C

1

R1=10kΩ
R2=10kΩ

mA

mW

V

1

∗

2

∗

IMB11A

ROHM : SMT6
EIAJ : SC-74

)

)

6

1

(

(

0.3

0.15

0.3to0.6

)

5

(
)

4

(

0.95

)

1.9

2

(

0.95

)

3

(

1.6

2.8

0.8

0to0.1

Each lead has same dimensions

Abbreviated symbol : B11

2.9

1.1

Rev.A 1/2

EMB11 / UMB11N / IMB11A

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter Symbol

Input voltage

Output voltage

V
VI (on)

VO (on)
Input current
Output current

IO (off)
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

R2 / R1

zPackaging specifications

Package
Code TN T110
Basic ordering

Type

unit (pieces)
EMB11
UMB11N
IMB11A

zElectrical characteristic curves

−100

−50

−20

(V)

−10

I (on)

Ta=−40˚C

−5

25˚C

100˚C

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ

−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

−

1

−

500m

−

200m

(V)

−

100m

O (on)

−

50m

−

20m

−

10m

−

5m

OUTPUT VOLTAGE : V

−

-2m

−

1m

−100µ

−200µ−2m −20m−500µ−5m −50m

Ta=100˚C

−1m −10m −100m

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

25˚C

−40˚C

VO=−0.3V

O

(A)

O

(A)

Min.

Typ. Max. Unit Conditions

−0.5

30

−

−

−

−

−0.3

−0.1

−

−

0.88

−

−

−

−

−0.5

−

−

−f

10

7

13

1

1.2

I (off)

−3.0

II

GI

T 250 − VCE= −10V, IE=5mA, f=100MHz

R1

0.8

V

CC= −5V, IO= −100µA

V

O= −0.3V, IO= −10mA

V
I

O/II= −10mA/ −0.5mA

V

I= −5V

V

mA

CC= −50V, VI=0V

V

µA

O= −5V, IO= −5mA

V

−

MHz

kΩ

−

−−

Taping

T2R

8000

3000 3000

lO/lI =20

−10m

−5m

Ta=100˚C

−2m

25˚C

−40˚C

−1m

(A)

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

−5µ

OUTPUT CURRENT : Io

−2µ

−1µ

−0.5 −1 −1.5 −2 −2.5 −3

0

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

VCC=−5V

I (off)

(V)

1k

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

−100µ−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

Fig.3 DC current gain vs. output

∗

Ta=100˚C

25˚C

−40˚C

OUTPUT CURRENT : I

current

VO=−5V

O

(A)

Rev.A 2/2