Datasheet IMD8A Datasheet (ROHM)

Page 1
IMD8A
Transistors
Digital Transistor (Dual Digital Transistors for Inverter Drive)
IMD8A
Features
!!!!
Absolute maximum ratings
!!!!
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature
200mW per element must not be exceeded. PNP type negative symbols have been omitted.
∗
Package, marking, and packaging specifications
!!!!
Type IMD8A
Package
Marking
Code
Basic
ordering unit
Circuit diagram
!!!!
(pieces)
R
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tstg
SMT6
D8 T108 3000
(Ta = 25°C)
Limits
50 50
5
100
300(TOTAL)
−55~+150
Unit
mA
mW
V V V
∗
°C
External dimensions
!!!!
)
6
(
0.3
)
5
( )
4
(
0.15
0.3to0.6
ROHM : SMT6 EIAJ : SC-74
(Units : mm)
)
1
(
0.95
2.9
)
1.9
2
(
0.95
)
3
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
R
1
Electrical characteristics
!!!!
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current
Input resistance
PNP type negative symbols have been omitted.
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
(Ta = 25°C)
CBO
BV BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
I
−
50
−
50
−
50
−
−
−
−
−−0.3 V IC =
100 250 600 − VCE =
32.9 47−61.1 kΩ
V
−
−
−
0.5
0.5
C
=
V
I
C
=
V
I
E
=
µA
V
CB
µA
V
EB
50µA 1mA 50µA
=
50V
=
4V
5mA , IB =
5V , IC =
0.5mA 1mA
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