(Standard type) |
TESTING |
VDE |
(Reinforced type) |
GU (General Use)-E Type
[1-Channel (Form B) Type]
PhotoMOS
RELAYS
8.8±0.05 |
6.4±0.05 |
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.252±.002 |
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.346±.002 |
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3.9±0.2 |
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.154±.008 |
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8.8±0.05 |
6.4±0.05 |
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.346±.002 |
.252±.002 |
3.6±0.2
.142±.008
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mm inch |
1 |
6 |
2 |
5 |
3 |
4 |
FEATURES
1. Low on resistance for normallyclosed type
This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane |
Intermediate |
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Source electrode Gate electrode |
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insulating |
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membrane |
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Gate |
N+ |
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N+ |
N+ |
N+ |
oxidation |
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membrane |
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P+ |
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P+ |
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N– |
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Drain |
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electrode |
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N+ |
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2.Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
3.High sensitivity, low ON resistance
Can control a maximum 0.13 A load cur-
rent with a 5 mA input current. Low ON resistance of 18 Ω (AQV410EH). Stable operation because there are no metallic contact parts.
4.Low-level off state leakage current
The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 100 pA even with the rated load voltage of 400 V (AQV414E).
5.Reinforced insulation 5,000 V type also available.
More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).
TYPICAL APPLICATIONS
•Security equipment
•Telepone equipment (Dial pulse)
•Measuring equipment
TYPES
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Part No. |
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Output rating* |
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Packing quantity |
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Through hole |
Surface-mount terminal |
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I/O isolation |
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terminal |
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Type |
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voltage |
Load |
Load |
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Tape and reel packing style |
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Tube packing style |
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Tube |
Tape and reel |
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Picked from the |
Picked from the |
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voltage |
current |
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1/2/3-pin side |
4/5/6-pin side |
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1,500 V AC |
400 V |
120 mA |
AQV414E |
AQV414EA |
AQV414EAX |
AQV414EAZ |
1 tube contains |
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(Standard) |
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AC/DC |
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50 pcs. |
1,000 pcs. |
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type |
5,000 V AC |
350 V |
130 mA |
AQV410EH |
AQV410EHA |
AQV410EHAX |
AQV410EHAZ |
1 batch contains |
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(Reinforced) |
400 V |
120 mA |
AQV414EH |
AQV414EHA |
AQV414EHAX |
AQV414EHAZ |
500 pcs. |
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*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
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Item |
Symbol |
Type of |
AQV414E(A) |
AQV410EH(A) |
AQV414EH(A) |
Remarks |
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connection |
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LED forward current |
IF |
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50 mA |
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Input |
LED reverse voltage |
VR |
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3 V |
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Peak forwrd current |
IFP |
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1 A |
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f = 100 Hz, Duty factor = 0.1% |
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Power dissipation |
Pin |
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75 mW |
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Load voltage (peak AC) |
VL |
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400 V |
350 V |
400 V |
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A |
0.12 A |
0.13 A |
0.12 A |
A connection: Peak AC, DC |
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Continuous load current |
IL |
B |
0.13 A |
0.15 A |
0.13 A |
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B,C connection: DC |
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Output |
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C |
0.15 A |
0.17 A |
0.15 A |
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Peak load current |
Ipeak |
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0.3 A |
0.4 A |
0.3 A |
A connection: 100 ms (1 shot), |
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VL = DC |
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Power dissipation |
Pout |
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500 mW |
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Total power dissipation |
PT |
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550 mW |
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I/O isolation voltage |
Viso |
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1,500 V AC |
5,000 V AC |
5,000 V AC |
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Temperature |
Operating |
Topr |
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–40°C to +85°C –40°F to +185°F |
Non-condensing at low |
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temperatures |
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limits |
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Storage |
Tstg |
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–40°C to +100°C –40°F to +212°F |
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125 |