MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-T/-AT/-CT/-TW
TRANSFER-MOLD TYPE
INSULATED TYPE
PS21963-T
INTEGRATED POWER FUNCTIONS
600V/10A low-loss 5th generation IGBT inverter bridge for
three phase DC-to-AC power conversion
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
•For upper-leg IGBTS : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
•For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT).
•Fault signaling : Corresponding to an SC fault (Lower-leg IGBT), a UV fault (Lower-side supply) or an OT fault (LVIC temperature).
•Input interface : 3V, 5V line (High Active).
•UL Approved : Yellow Card No. E80276
APPLICATION
AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES (PS21963-T)
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A |
B |
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38±0.5 |
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20×1.778(=35.56) |
3.5 |
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0.28 |
35±0.3 |
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1.778±0.2 |
16-0.5 |
1.5 ±0.05 |
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4 |
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0 |
17
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.6 |
QR |
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12 |
-R1 |
Code |
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2 |
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3 MIN |
18
0.28
2.54 ±0.2
0.5
HEAT SINK SIDE
1 |
(1) |
24 ±0.5
Type name
Lot No.
25
8-0.6 4-C1.2
14×2.54(=35.56)
0.5 0.5
0.5
5.5±0.5 |
9.5±0.5 |
0.5 |
14.4 ±0.5 |
(3.5) |
29.2 ± |
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14.4 ±0.5 |
0.8 |
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0 . 4
2.5 MIN
(2.656)
(1.2)
(2.756)
DETAIL A
(3.3)
HEAT SINK SIDE
) ° (0~5
(1.2)
Dimensions in mm
TERMINAL CODE
1.NC
2.VUFB
3.VVFB
4.VWFB
5.UP
6.VP
7.WP
8.VP1
9.VNC *
10.UN
11.VN
12.WN
13.VN1
14.FO
15.CIN
16.VNC *
17.NC
18.NC
19.NC
20.N
21.W
22.V
23.U
24.P
25.NC
1.5 |
MIN |
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DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open.
Mar. 2009
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-T/-AT/-CT/-TW
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 2 LONG TERMINAL TYPE PACKAGE OUTLINES (PS21963-AT)
0.28
1.778±0.2
17
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.6 |
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12 |
-R1 |
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2 |
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18
0.28
2.54±0.2
38±0.5
20×1.778(=35.56)
35±0.3
QR |
Type name |
Code |
Lot No. |
3 MIN |
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A |
B |
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3.5 |
16-0.5 |
1.5 ±0.05 |
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4 |
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. |
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0 |
1 |
(1) |
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0.5 |
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±0.5 |
14.4 ±0.5 |
(3.5) |
(3.3) |
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24 ± |
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29.4 |
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14.4 ±0.5 |
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0.8 |
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HEAT SINK SIDE |
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25 |
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4-C1.2 |
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. |
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8-0.6 |
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0 |
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4 |
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Dimensions in mm
TERMINAL CODE
1.NC
2.VUFB
3.VVFB
4.VWFB
5.UP
6.VP
7.WP
8.VP1
9.VNC *
10.UN
11.VN
12.WN
13.VN1
14.FO
15.CIN
16.VNC *
17.NC
18.NC
19.NC
20.N
21.W
22.V
23.U
24.P
25.NC
14×2.54(=35.56) |
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0.5 |
0.5 |
2.5 MIN |
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0.5 |
0.5 |
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(2.656) |
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0.5 |
14±0.5 |
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(1.2) |
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5.5± |
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(2.756) |
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HEAT SINK SIDE
DETAIL A
(1.2)
) ° (0~5
1.5 |
MIN |
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DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open.
Fig. 3 ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-CT)
0.28
1.778 ±0.2
17
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.6 |
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12 |
-R1 |
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2 |
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38±0.5
20×1.778(=35.56)
35±0.3
QR |
Type name |
Code |
Lot No. |
3 MIN |
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A |
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B |
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3.5 |
16-0.5 |
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4 |
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0 |
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4 |
1 |
(1) |
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. |
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0 |
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24 ±0.5 |
33.7±0.5 |
29.2 ±0.5 |
18.9±0.5 |
14.4 ±0.5 |
(3.5) |
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14.4 ±0.5 |
0.8 |
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18 |
25 |
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0 |
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4-C1.2 |
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4 |
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0.28 |
8-0.6 |
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. |
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2.54±0.2 |
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14×2.54(=35.56) |
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0.5 |
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0.5 |
0.5 |
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(2.656) |
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5.5±0.5 |
0.5 |
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9.5± |
(1.2) |
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(2.756)
HEAT SINK SIDE
DETAIL A
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Dimensions in mm |
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TERMINAL CODE |
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1.5±0.05 |
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1. |
NC |
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2. |
VUFB |
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3. |
VVFB |
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4. |
VWFB |
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5. |
UP |
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6. |
VP |
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7. |
WP |
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8. |
VP1 |
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9. |
VNC * |
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10. |
UN |
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11. |
VN |
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12. |
WN |
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13. |
VN1 |
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14. |
FO |
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15. |
CIN |
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16. |
VNC * |
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17. |
NC |
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18. |
NC |
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19. |
NC |
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HEAT SINK SIDE |
20. |
N |
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21. |
W |
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22. |
V |
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) |
23. |
U |
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° |
24. |
P |
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(0~5 |
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25. |
NC |
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) |
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° |
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(0~5 |
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1.5 |
MIN |
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(1.2) |
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DETAIL B |
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*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open.
Mar. 2009
2
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-T/-AT/-CT/-TW
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 4 BOTH SIDES ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-TW)
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A |
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B |
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38 ±0.5 |
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3.5 |
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20×1.778(=35.56) |
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1.5 ±0.05 |
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0.28 |
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35 ±0.3 |
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1.778 ±0.25 |
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16-0.5 |
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4 |
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. |
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0 |
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17 |
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1 |
(1) |
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4 |
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17.4 ±0.5 |
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0 |
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0.5 |
±0.6 |
±0.5 |
14.4 ±0.5 |
(3.5) |
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QR |
Type name |
24 ± |
35.2 |
29.2 |
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.6 |
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0.8 |
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12 |
-R1 |
Code |
Lot No. |
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17.4±0.5 |
14.4±0.5 |
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2 |
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HEAT SINK SIDE |
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3 MIN |
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0 |
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. |
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(1.8) |
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4-C1.2 |
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4 |
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18 |
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25 |
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° |
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) |
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0.28 |
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7-0.6 |
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. |
(0~5 |
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2.54±0.25 |
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0 |
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4 |
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14×2.54(=35.56) |
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) |
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° |
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2.5 MIN |
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(0~5 |
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0.5 |
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0.5 |
0.5 |
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(2.656) |
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5.5±0.5 |
±0.5 |
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(1.2) |
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11 |
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(1.2) |
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(2.756) |
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HEAT SINK SIDE
DETAIL A
Dimensions in mm
TERMINAL CODE
1.NC
2.VUFB
3.VVFB
4.VWFB
5.UP
6.VP
7.WP
8.VP1
9.VNC *
10.UN
11.VN
12.WN
13.VN1
14.FO
15.CIN
16.VNC *
17.NC
18.NC
19.NC
20.N
21.W
22.V
23.U
24.P
25.NC
1.5 |
MIN |
|
DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open.
Fig. 5 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
C1 : Electrolytic type with good temperature and frequency |
High-side input (PWM) |
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–CBU |
–CBV CBU+ |
–CBW CBV+ |
CBW+ |
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(3V, 5V line)(Note 1, 2) |
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characteristics |
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C2 |
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(Note : The capacitance value depends on the PWM control |
Input signal |
Input signal |
Input signal |
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C1 |
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scheme used in the applied system). |
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(Note 6) |
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conditioning |
conditioning |
conditioning |
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C2 : 0.22~2µF R-category ceramic capacitor for noise filtering. |
Level shifter |
Level shifter |
Level shifter |
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(Note 5) |
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Protection |
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circuit (UV) |
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Inrush current |
Drive circuit |
Drive circuit Drive circuit |
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limiter circuit |
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P |
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H-side IGBTS |
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DIPIPM |
AC line input |
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U |
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(Note 4) |
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V |
M |
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W |
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(Note 7) |
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AC line output |
Z |
C |
N1 |
N |
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L-side IGBTS
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VNC |
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Z : Surge absorber |
CIN |
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Drive circuit |
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C : AC filter (Ceramic capacitor 2.2~6.5nF) |
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(Note : Additionally, an appropriate line-to line |
Input signal conditioning |
Fo logic |
Protection |
Control supply |
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surge absorber circuit may become necessary |
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circuit |
Under-Voltage |
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depending on the application environment). |
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protection |
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(Note 6) |
Low-side input (PWM) FO |
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(3V, 5V line)(Note 1, 2) |
Fault output (5V line) |
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(Note 3) |
VNC |
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VD |
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(15V line) |
Note1: Input logic is high-active. There is a 3.3kΩ (min) pull-down resistor built-in each input circuit. When using an external CR filter, please make it satisfy the input threshold voltage.
2:By virtue of integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler or transformer isolation is possible. (see also Fig. 11)
3:This output is open drain type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10kΩ resistor. (see also Fig. 11)
4:The wiring between the power DC link capacitor and the P, N1 terminals should be as short as possible to protect the DIPIPM against catastrophic high surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P & N1 DC power input pins.
5:High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
6:It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
7:Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires.
Mar. 2009
3