0.1– 6 GHz 3V, 17 dBm Amplifier
Technical Data
•+17.3 dBm P1 dB at 2.0 GHz
+20 dBm Psat at 2.0 GHz
•Single +3V Supply
•2.2 dB Noise Figure at 2.0Ê GHz
•13.2 dB Gain at 2.0 GHz
•Ultra-miniature Package
•Unconditionally Stable
•Buffer or Driver Amp for PCS, PHS, ISM, SATCOM and WLL Applications
•High Dynamic Range LNA
OUTPUT
and Vd
6
INPUT
3
BIAS
GND
1, 2, 4, 5
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
GND 1 |
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82 |
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OUTPUT |
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GND |
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5 |
and Vd |
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GND |
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INPUT |
3 |
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4 |
GND |
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Note: Package marking provides orientation and identification.
MGA-82563
Hewlett-Packard’s MGA-82563 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from 0.1 to 6 GHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space of a SOT-143 package.
The input and output of the amplifier are matched to 50ÊΩ (below 2:1 VSWR) across the entire bandwidth, eliminating the expense of external matching. The amplifier allows a wide dynamic range by offering a 2.2 dB NF coupled with a +31 dBm Output IP3.
The circuit uses state-of-the-art PHEMT technology with proven reliability. On-chip bias circuitry allows operation from a single +3Ê V power supply, while resistive feedback ensures stability (K>1) over all frequencies and temperatures.
5965-9685E |
6-208 |
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Absolute |
Symbol |
Parameter |
Units |
Maximum[1] |
Vd |
Device Voltage, RF Output |
V |
5.0 |
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to Ground |
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Vgd |
Device Voltage, Gate |
V |
-6.0 |
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to Drain |
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Vin |
Range of RF Input Voltage |
V |
+0.5to-1.0 |
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to Ground |
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Pin |
CW RF Input Power |
dBm |
+13 |
Tch |
Channel Temperature |
°C |
165 |
TSTG |
Storage Temperature |
°C |
-65 to 150 |
Thermal Resistance[2]: θch-c =180°C/W
Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board.)
MGA-82563 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 3 V
Symbol |
Parameters and Test Conditions |
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Units |
Min. |
Typ. |
Max. |
Std Dev[2] |
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Gtest |
Gain in test circuit[1] |
f = 2.0 GHz |
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12.0 |
13.2 |
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0.35 |
NFtest |
Noise Figure in test circuit[1] |
f = 2.0 GHz |
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2.2 |
2.9 |
0.20 |
NF50 |
Noise Figure in 50 Ω system |
f = 0.5 GHz |
dB |
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2.3 |
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f = 1.0 GHz |
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2.2 |
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f = 2.0 GHz |
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2.2 |
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0.20 |
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f = 3.0 GHz |
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2.2 |
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f = 4.0 GHz |
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2.4 |
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f = 6.0 GHz |
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2.7 |
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|S21|2 |
Gain in 50 Ω system |
f = 0.5 GHz |
dB |
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14.7 |
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f = 1.0 GHz |
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14.5 |
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f = 2.0 GHz |
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13.5 |
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0.35 |
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f = 3.0 GHz |
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12.1 |
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f = 4.0 GHz |
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10.7 |
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f = 6.0 GHz |
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8.8 |
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P1 dB |
Output Power at 1 dB Gain Compression |
f = 0.5 GHz |
dBm |
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17.4 |
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f = 1.0 GHz |
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17.5 |
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f = 2.0 GHz |
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17.3 |
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0.54 |
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f = 3.0 GHz |
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17.1 |
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f = 4.0 GHz |
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17.0 |
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f = 6.0 GHz |
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16.8 |
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IP3 |
Output Third Order Intercept Point |
f = 2.0 GHz |
dBm |
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+31 |
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1.0 |
VSWRin |
Input VSWR |
f=0.2–5.0GHz |
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1.8:1 |
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VSWRout |
Output VSWR |
f=0.2–5.0GHz |
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1.2:1 |
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Id |
Device Current |
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mA |
63 |
84 |
101 |
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Notes:
1.Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2.Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specification.
6-209
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(dB) |
10 |
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GAIN |
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6 |
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4 TA = +85°C
2TA = +25°C TA = –40°C
0
0 |
1 |
2 |
3 |
4 |
5 |
6 |
FREQUENCY (GHz)
Figure 1. 50 Ω Power Gain vs.
Frequency and Temperature.
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(dB) |
10 |
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8 |
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GAIN |
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6 |
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4 |
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Vd = 3.3V |
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2 |
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Vd = 3.0V |
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Vd = |
2.7V |
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0 |
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0 |
1 |
2 |
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4 |
5 |
6 |
FREQUENCY (GHz)
Figure 4. 50 Ω Power Gain vs.
Frequency and Voltage.
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3.5 |
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(n:1) |
3 |
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VSWR |
2.5 |
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2 |
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Input |
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1.5 |
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Output |
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1 |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
FREQUENCY (GHz)
Figure 7. Input and Output VSWR into 50 Ω vs. Frequency.
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(dB) |
4 |
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FIGURE |
3 |
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NOISE |
2 |
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1 |
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TA = |
+85°C |
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TA = +25°C |
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TA = |
–40°C |
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0 |
1 |
2 |
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3 |
4 |
5 |
6 |
FREQUENCY (GHz)
Figure 2. Noise Figure (into 50 Ω ) vs. Frequency and Temperature.
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(dB) |
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FIGURE |
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NOISE |
2 |
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1 |
Vd = 3.3V |
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Vd = 3.0V |
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Vd = 2.7V |
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0 |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
FREQUENCY (GHz)
Figure 5. Noise Figure (into 50 Ω ) vs.
Frequency and Voltage.
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100 |
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(mA) |
90 |
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80 |
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CURRENT |
70 |
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60 |
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DEVICE |
50 |
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TA |
= -40°C |
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30 |
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TA |
= +85°C |
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40 |
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TA = +25°C |
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1 |
2 |
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4 |
DEVICE VOLTAGE (V)
Figure 8. Device Current vs. Voltage and Temperature.
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(dBm) |
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1 dB |
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P |
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TA |
= +85°C |
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TA = +25°C |
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TA = –40°C |
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1 |
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6 |
FREQUENCY (GHz)
Figure 3. Output Power @ 1 dB Gain Compression vs. Frequency and Temperature.
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(dBm) |
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1 dB |
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P |
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Vd = 3.3V |
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Vd |
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Vd = 2.7V |
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FREQUENCY (GHz)
Figure 6. Output Power @ 1 dB Gain Compression vs. Frequency and Voltage.
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Gain |
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10 |
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NF |
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8 |
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and |
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GAIN |
6 |
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NF |
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0 |
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5 |
6 |
FREQUENCY (GHz)
Figure 9. Minimum Noise Figure and Associated Gain vs. Frequency.
6-210
Freq. |
S11 |
|
|
S21 |
|
|
S12 |
|
|
S22 |
K |
GHz |
Mag |
Ang |
dB |
Mag |
Ang |
dB |
Mag |
Ang |
Mag |
Ang |
Factor |
|
|
|
|
|
|
|
|
|
|
|
|
0.1 |
0.48 |
-39 |
15.71 |
6.10 |
164 |
-23 |
0.070 |
27 |
0.16 |
-99 |
1.02 |
0.2 |
0.35 |
-35 |
14.81 |
5.50 |
165 |
-22 |
0.076 |
14 |
0.12 |
-134 |
1.20 |
0.5 |
0.29 |
-37 |
14.34 |
5.21 |
159 |
-22 |
0.079 |
6 |
0.11 |
177 |
1.29 |
1.0 |
0.29 |
-57 |
13.95 |
4.98 |
144 |
-22 |
0.080 |
3 |
0.11 |
156 |
1.33 |
1.5 |
0.29 |
-78 |
13.50 |
4.73 |
128 |
-22 |
0.082 |
2 |
0.10 |
142 |
1.37 |
2.0 |
0.29 |
-99 |
12.99 |
4.46 |
114 |
-22 |
0.085 |
1 |
0.10 |
131 |
1.41 |
2.5 |
0.29 |
-118 |
12.45 |
4.19 |
99 |
-21 |
0.089 |
-1 |
0.10 |
124 |
1.44 |
3.0 |
0.28 |
-138 |
11.84 |
3.91 |
86 |
-21 |
0.093 |
-3 |
0.11 |
118 |
1.48 |
3.5 |
0.28 |
-158 |
11.24 |
3.65 |
74 |
-21 |
0.098 |
-6 |
0.12 |
111 |
1.51 |
4.0 |
0.29 |
-177 |
10.67 |
3.42 |
61 |
-20 |
0.103 |
-9 |
0.13 |
106 |
1.52 |
4.5 |
0.30 |
166 |
10.11 |
3.20 |
50 |
-20 |
0.107 |
-13 |
0.15 |
100 |
1.53 |
5.0 |
0.32 |
151 |
9.58 |
3.01 |
38 |
-19 |
0.112 |
-18 |
0.16 |
94 |
1.54 |
5.5 |
0.34 |
136 |
9.07 |
2.84 |
27 |
-19 |
0.117 |
-23 |
0.18 |
87 |
1.55 |
6.0 |
0.36 |
123 |
8.57 |
2.68 |
16 |
-19 |
0.121 |
-29 |
0.19 |
82 |
1.54 |
6.5 |
0.38 |
110 |
8.06 |
2.53 |
5 |
-19 |
0.125 |
-35 |
0.22 |
74 |
1.55 |
7.0 |
0.40 |
97 |
7.51 |
2.37 |
-5 |
-18 |
0.126 |
-41 |
0.24 |
66 |
1.59 |
|
|
|
|
|
|
|
|
|
|
|
|
TC = 25°C, ZO = 50 Ω, Vd = 3 V
Frequency |
NFO |
|
Γopt |
Rn /50 Ω |
||
GHz |
dB |
Mag. |
|
Ang. |
|
— |
0.5 |
2.10 |
0.15 |
|
25 |
|
1.20 |
1.0 |
2.10 |
0.15 |
|
45 |
|
0.60 |
1.5 |
2.10 |
0.14 |
|
65 |
|
0.29 |
2.0 |
2.12 |
0.15 |
|
75 |
|
0.27 |
2.5 |
2.12 |
0.15 |
|
94 |
|
0.25 |
3.0 |
2.15 |
0.144 |
|
113 |
|
0.23 |
3.5 |
2.16 |
0.14 |
|
134 |
|
0.21 |
4.0 |
2.16 |
0.15 |
|
155 |
|
0.19 |
4.5 |
2.19 |
0.17 |
|
177 |
|
0.18 |
5.0 |
2.18 |
0.20 |
|
-166 |
|
0.18 |
5.5 |
2.19 |
0.22 |
|
-152 |
|
0.18 |
6.0 |
2.23 |
0.25 |
|
-138 |
|
0.19 |
6.5 |
2.28 |
0.27 |
|
-125 |
|
0.23 |
7.0 |
2.39 |
0.29 |
|
-111 |
|
0.28 |
Note:
1. Reference plane per Figure 11 in Applications Information section.
6-211