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Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
Features
•Cascadable 50 Ω Gain Block
•Low Noise Figure:
2.0 dB Typical at 0.5 GHz
•High Gain:
31 dB Typical at 0.5 GHz
26 dB Typical at 1.5 GHz
•3 dB Bandwidth:
DC to 0.8 GHz
•Unconditionally Stable (k>1)
•Low Cost Plastic Package
Description
The INA-02184 and INA-02186 are low-noise silicon bipolar Monolithic Microwave Integrated
Circuit (MMIC) feedback amplifiers housed in low cost plastic packages. They are designed for narrow or wide bandwidth commercial applications that require high gain and low noise IF or RF amplification.
The INA series of MMICs is fabricated using HP’s 10 GHz fT, 25 GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Typical Biasing Configuration
VCC
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RFC (Optional) |
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Rbias |
Cblock |
4 |
Cblock |
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RF IN |
3 |
RF OUT |
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1 |
Vd |
= 5.5 V |
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2 |
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INA-02184 INA-02186
Package 84
Package 86
5965-9675E |
6-96 |
INA-02184, -02186 Absolute Maximum Ratings
Parameter |
Absolute Maximum[1] |
Device Current |
50 mA |
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Power Dissipation[2,3,4] |
400mW |
RF Input Power |
+13dBm |
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Junction Temperature |
+150°C |
Storage Temperature |
–65 to 150°C |
Thermal Resistance[2]:
θjc = 90°C/W — INA-02184
θjc = 100°C/W — INA-02186
Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.TCASE = 25°C.
3.Derate at 11.1 mW/°C for TC > 144°CforINA-02184.
4.Derate at 10 mW/°C for TC > 110°C forINA-02186.
INA-02184, -02186 Electrical Specifications[1], TA = 25°C |
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INA-02184 |
INA-02186 |
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Symbol |
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω |
Units |
Min. |
Typ. |
Max. |
Min. |
Typ. |
Max. |
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GP |
PowerGain(|S21|2) |
f = 0.5 GHz |
dB |
29.0 |
31.0 |
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29.0 |
31.0 |
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GP |
Gain Flatness |
f = 0.01 to 1.0 GHz |
dB |
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± 2.0 |
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± 2.0 |
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f3 dB |
3 dB Bandwidth[2] |
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GHz |
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0.8 |
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0.8 |
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ISO |
Reverse Isolation (|S12| 2) |
f = 0.01 to 1.0 GHz |
dB |
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39 |
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39 |
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VSWR |
Input VSWR (Max over Freq. Range) |
f = 0.01 to 1.0 GHz |
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1.5 |
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2.0 |
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Output VSWR (Max over Freq. Range) |
f = 0.01 to 1.0 GHz |
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1.7 |
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1.7 |
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NF |
50 Ω Noise Figure |
f = 0.5 GHz |
dB |
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2.0 |
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2.0 |
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P1 dB |
Output Power at 1 dB Gain Compression |
f = 0.5 GHz |
dBm |
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11 |
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11 |
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IP3 |
Third Order Intercept Point |
f = 0.5 GHz |
dBm |
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23 |
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23 |
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tD |
Group Delay |
f = 0.5 GHz |
psec |
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330 |
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350 |
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Vd |
Device Voltage |
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V |
4.0 |
5.5 |
7.0 |
4.0 |
5.5 |
7.0 |
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dV/dT |
Device Voltage Temperature Coefficient |
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mV/°C |
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+10 |
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+10 |
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Notes:
1.The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page.
2.Referenced from 10 MHz Gain (GP).
INA-02184, -02186 Part Number Ordering Information
Part Number |
No. of Devices |
Container |
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INA-02184-TR1 |
1000 |
7" Reel |
INA-02184-BLK |
100 |
Antistatic Bag |
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INA-02186-TR1 |
1000 |
7" Reel |
INA-02186-BLK |
100 |
Antistatic Bag |
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For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-97
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