HIT 2SK975 Datasheet

2SK975

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-92 Mod

G

3

2

D

S

1

1. Source

2. Drain

3. Gate

2SK975

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

Channel dissipation Pch 900 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(off)

resistance

Forward transfer admittance |yfs| 0.9 1.5 — S ID = 1 A, VDS = 10 V *
Input capacitance Ciss — 140 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 70 — pF f = 1 MHz
Reverse transfer capacitance Crss — 20 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

60——V I

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
— — 100 µAVDS = 50 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.3 0.4 Ω ID = 1 A, VGS = 10 V *

0.4 0.55 Ω ID = 1 A, VGS = 4 V *

—3 —nsI
— 12 — ns RL = 30 Ω
—50—ns
—30—ns
— 0.9 — V IF = 1.5 A, VGS = 0

— 45 — ns IF = 1.5 A, VGS = 0,

60 V
±20 V

1.5 A

4.5 A

1.5 A

= 10 mA, VGS = 0

D

= ±100 µA, VDS = 0

G

= 1 A, VGS = 10 V,

D

di

/dt = 50 A/µs

F

1

1

1

2

2SK975

1.5

1.0

0.5

Channel Dissipation Pch (W)

Power vs. Temperature Derating

50 1000

Case Temperature T

Typical Output Characteristics

5

4

(A)

D

3

10 V

4.5 V
5 V

7 V

(°C)

C

Pulse Test

4 V

3.5 V

150

Maximum Safe Operation Area

10

(A)

D

3

1.0

PW = 10 ms (1 Shot)

DC Operation

0.3

Operation in this area

0.1
is limited by R

Drain Current I

0.03

0.01

Ta = 25°C

0.1 100

0.3 1.0 3

DS (on)

10

Drain to Source Voltage V

Typical Transfer Characteristics

5

VDS = 10 V

4

Pulse Test

(A)

D

3

1 ms

DS

100 µs

30

(V)

10 µs

2

Drain Current I

1

0

0

Drain to Source Voltage V

3 V

VGS = 2.5 V

6

842 10

(V)

DS

2

Drain Current I

1

75°C

–25°C

TC= 25°C

3

0

Gate to Source Voltage V

42105

(V)

GS

3