HIT 3SK194 Datasheet
Silicon N-Channel Dual Gate MOS FET
Application
VHF/UHF TV tuner RF amplifier
Outline
MPAK-4
3SK194
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK194
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 125 °C
Storage temperature Tstg –55 to +125 °C
15 V
±10 V
±10 V
35 mA
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSX
voltage
Gate 1 to source breakdown
V
(BR)G1SS
voltage
Gate 2 to source breakdown
V
(BR)G2SS
voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
DSS
Forward transfer admittance |yfs|17——mSV
Input capacitance Ciss — 2.8 3.5 pF V
Output capacitance Coss — 1.8 2.5 pF
Reverse transfer capacitance Crss — 0.02 — pF
Power gain PG 12 15 — dB V
Noise figure NF — 3.0 4.5 dB
Noise figure NF — 3.0 4.0 dB V
Power gain PG 27 30 — dB V
Noise figure NF — 1.0 2.5 dB
Note: Marking is “IY–”.
15 — — V ID = 200 µA,
V
= V
G1S
= –5 V
G2S
±10 — — V IG1 = ±10 µA, V
±10 — — V IG2 = ±10 µA, V
——±100 nA V
——±100 nA V
— — –1.0 V V
— — –1.5 V V
0 — 10 mA V
= ±8 V, V
G1S
= ±8 V, V
G2S
= 10 V, V
DS
I
= 100 µA
D
= 10 V, V
DS
I
= 100 µA
D
= 6 V, V
DS
= 6 V, V
DS
I
= 10 mA, f = 1 kHz
D
= 6 V, V
DS
I
= 10 mA, f = 1 MHz
D
= 6 V, V
DS
I
= 10 mA, f = 900 MHz
D
= 12 V, V
DD
G2S
G1S
G1S
G2S
G2S
G2S
AGC
f = 60 MHz
= 6 V, V
DS
I
= 10 mA, f = 200 MHz
D
G2S
G2S
G1S
= 0, V
= 3 V,
= 3 V,
= 3 V,
= 3 V,
3SK194
= VDS = 0
G2S
= VDS = 0
G1S
= VDS = 0
= VDS = 0
= 3 V,
= 3 V,
G2S
= 10.5 V,
= 3 V
3
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