HIT 4AK27 Datasheet

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HIT 4AK27 Datasheet

4AK27

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-728 (Z) 1st. Edition January 1999

Features

Low on-resistance

RDS(on) 0.15Ω, VGS = 10V, ID = 3.0A

4V gate drive devices.

High density mounting

Outline

SP-10

3

5

D

D

4

G

2 G

1 S

 

 

1 2

3 4 5

 

 

 

 

7

9

 

6

7 8

 

 

D

D

 

 

 

 

 

 

 

9

10

6

8

 

 

 

 

 

 

 

 

 

G

G

 

 

 

 

 

 

1, 10. Source

S 10 2, 4, 6, 8. Gate

3, 5, 7, 9. Drain

4AK27

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

5

A

 

 

 

 

Drain peak current

Note1

20

A

ID(pulse)

Body-drain diode reverse drain current

IDR

5

A

Avalanche current

IAP

5

A

Avalanche energy1

EAR

2.1

mJ

Channel dissipation

Pch(Tc=25˚C) Note2

28

W

 

 

 

 

Channel dissipation

Pch Note2

4

W

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

 

 

 

2.4 devices poeration

3.Value at Tch=25˚C, Rg ≥ 50Ω

2

4AK27

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

60

V

I

D = 10mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±20

V

I

G = ±100µA, VDS = 0

Zero gate voltege drain current

IDSS

100

µA VDS = 50 V, VGS = 0

Gate to source leak current

IGSS

±10

µA VGS = ±16V, VDS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.25

V

I D = 1mA, VDS = 10V

Static drain to source on state resistance

RDS(on)

0.12

0.15

Ω

 

 

ID = 3A, VGS = 10V Note4

Static drain to source on state resistance

RDS(on)

0.15

0.2

Ω

 

 

ID = 3A, VGS = 4V Note4

Forward transfer admittance

|yfs|

3.0

5.5

S

I D = 3A, VDS = 10V Note4

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

390

pF

V

DS = 10V

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

190

pF

V

 

GS = 0

Reverse transfer capacitance

Crss

45

pF

f = 1MHz

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

10

ns

V

 

GS = 10V, ID = 3A

Rise time

tr

42

ns

R

L = 10Ω

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

90

ns

 

 

 

Fall time

tf

55

ns

 

 

 

 

 

 

 

 

 

 

 

Body–drain diode forward voltage

VDF

1.0

V

I

F = 5A, VGS = 0

Body–drain diode reverse recovery time

trr

60

ns

I

F = 5A, VGS = 0

 

 

 

 

 

 

 

 

diF/ dt =50A/µs

Note: 4. Pulse test

3

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