4AK27
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-728 (Z) 1st. Edition January 1999
Features
•Low on-resistance
RDS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
•4V gate drive devices.
•High density mounting
Outline
SP-10
3 |
5 |
D |
D |
4 |
G |
2 G |
1 S |
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1 2 |
3 4 5 |
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7 |
9 |
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6 |
7 8 |
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D |
D |
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9 |
10 |
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6 |
8 |
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G |
G |
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1, 10. Source
S 10 2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
4AK27
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
5 |
A |
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Drain peak current |
Note1 |
20 |
A |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
5 |
A |
Avalanche current |
IAP |
5 |
A |
Avalanche energy1 |
EAR |
2.1 |
mJ |
Channel dissipation |
Pch(Tc=25˚C) Note2 |
28 |
W |
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Channel dissipation |
Pch Note2 |
4 |
W |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % |
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2.4 devices poeration
3.Value at Tch=25˚C, Rg ≥ 50Ω
2
4AK27
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test Conditions |
Drain to source breakdown voltage |
V(BR)DSS |
60 |
— |
— |
V |
I |
D = 10mA, VGS = 0 |
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Gate to source breakdown voltage |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100µA, VDS = 0 |
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Zero gate voltege drain current |
IDSS |
— |
— |
100 |
µA VDS = 50 V, VGS = 0 |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA VGS = ±16V, VDS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
1.0 |
— |
2.25 |
V |
I D = 1mA, VDS = 10V |
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Static drain to source on state resistance |
RDS(on) |
— |
0.12 |
0.15 |
Ω |
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ID = 3A, VGS = 10V Note4 |
Static drain to source on state resistance |
RDS(on) |
— |
0.15 |
0.2 |
Ω |
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ID = 3A, VGS = 4V Note4 |
Forward transfer admittance |
|yfs| |
3.0 |
5.5 |
— |
S |
I D = 3A, VDS = 10V Note4 |
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Input capacitance |
Ciss |
— |
390 |
— |
pF |
V |
DS = 10V |
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Output capacitance |
Coss |
— |
190 |
— |
pF |
V |
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GS = 0 |
Reverse transfer capacitance |
Crss |
— |
45 |
— |
pF |
f = 1MHz |
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Turn-on delay time |
td(on) |
— |
10 |
— |
ns |
V |
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GS = 10V, ID = 3A |
Rise time |
tr |
— |
42 |
— |
ns |
R |
L = 10Ω |
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Turn-off delay time |
td(off) |
— |
90 |
— |
ns |
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Fall time |
tf |
— |
55 |
— |
ns |
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Body–drain diode forward voltage |
VDF |
— |
1.0 |
— |
V |
I |
F = 5A, VGS = 0 |
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Body–drain diode reverse recovery time |
trr |
— |
60 |
— |
ns |
I |
F = 5A, VGS = 0 |
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diF/ dt =50A/µs |
Note: 4. Pulse test
3