HIT BB404M Datasheet

BB404M

Build in Biasing Circuit MOS FET IC

UHF/VHF RF Amplifier

ADE-208-717A (Z) 2nd. Edition Dec. 1998

Features

•Build in Biasing Circuit; To reduce using parts cost & PC board space.

•High gain;

(PG = 29 dB typ. at f = 200 MHz)

•Low noise characteristics;

(NF = 1.2 dB typ. at f = 200 MHz)

•Wide supply voltage range;

Applicable with 5V to 9V supply voltage.

•Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

•Provide mini mold packages; MPAK-4R(SOT-143 var.)

Outline

MPAK-4R

3

4

2

1 1. Source

2. Drain

3. Gate2

4. Gate1

Notes: 1. Marking is “DX–”.

2. BB404M is individual type number of HITACHI BBFET.

BB404M

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDS	12	V
Gate1 to source voltage	VG1S	±10	V
		– 0
Gate2 to source voltage	VG2S	Å}10	V
Drain current	ID	25	mA
Channel power dissipation	Pch	150	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

12

—

—

V

I

D = 200µA, VG1S = VG2S = 0

Gate1 to source breakdown voltage

V(BR)G1SS

+10

—

—

V

I

G1 = +10µA, VG2S = VDS = 0

Gate2 to source breakdown voltage

V(BR)G2SS

±10

—

—

V

I

G2 = ±10µA, VG1S = VDS = 0

Gate1 to source cutoff current

IG1SS

—

—

+100

nA

V

G1S = +9V, VG2S = VDS = 0

Gate2 to source cutoff current

IG2SS

—

—

±100

nA

VG2S = ±9V, VG1S = VDS = 0

Gate1 to source cutoff voltage

VG1S(off)

0.4

0.7

1.0

V

VDS = 5V, VG2S = 4V, ID = 100µA

Gate2 to source cutoff voltage

VG2S(off)

0.5

0.7

1.0

V

VDS = 5V, VG1S = 5V, ID = 100µA

Input capacitance

ciss

2.3

2.8

3.6

pF

VDS = 5V, VG1

= 5V

Output capacitance

coss

0.9

1.3

2.0

pF

VG2S =4V, RG = 180kΩ

Reverse transfer capacitance

crss

0.003

0.02

0.05

pF

f = 1MHz

Drain current

ID(op) 1

9

15

19

mA

VDS = 5V, VG1

= 5V

VG2S = 4V, RG = 180kΩ

ID(op) 2

—

13

—

mA

V

DS = 9V, VG1

= 9V

VG2S =6V, RG = 470kΩ

Forward transfer admittance

|yfs|1

22

27

34

mS

VDS = 5V, VG1

= 5V, VG2S =4V

RG = 180kΩ, f = 1kHz

|yfs|2

—

27

—

mS

V

DS = 9V, VG1

= 9V, VG2S =6V

RG = 470kΩ, f = 1kHz

Power gain

PG1

24

29

32

dB

VDS = 5V, VG1

= 5V, VG2S =4V

RG = 180kΩ, f = 200MHz

PG2

—

29

—

dB

V

DS = 9V, VG1

= 9V, VG2S =6V

RG = 470kΩ, f = 200MHz

Noise figure

NF1

—

1.2

1.9

dB

V DS = 5V, VG1

= 5V, VG2S =4V

RG = 180kΩ, f = 200MHz

NF2

—

1.2

—

dB

V

DS = 9V, VG1

= 9V, VG2S =6V

RG = 470kΩ, f = 200MHz

2

BB404M

Main Characteristics

Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG1

VG2

R G

Gate 1

Gate 2

Source

Drain

A

I D

Power Gain, Noise Figure Test Circuit

V T		VG2				V T
1000p		1000p				1000p
	1000p	47k	BBFET			47k
47k				L2	1000p	Output (50Ω)
Input (50Ω)
L1						10p max

1000p		1000p	RFC
		R G	1SV70
36p	1SV70		180k (VD=5V)
			470k (VD=9V)

1000p

	V D= V G1	Unit Resistance	(Ω)
		Capacitance	(F)

L1 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

L2 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC :φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

.

3

BB404M

Maximum Channel Power
Dissipation Curve	Typical Output Characteristics

(mW)	200						25	VG2S = 6 V					k Ω
																Ω
Pch						(mA)	20	V G1= VDS			270		330		k
																Ω
	150
													390		k
Power Dissipation						D	15									Ω
						Drain Current I
														k
	100												470			Ω
														k
							10									Ω
													560 k
													680			Ω
																k
	50												820
							5									Ω
Channel													1M
																Ω
										RG		= 1.5		M
	0	50	100	150	200		0	2	4	6			8			10
		Ambient Temperature		Ta	(°C)			Drain to Source Voltage				VDS (V)

Drain Current I D (mA)

		Drain Current vs.
25	Gate2 to Source Voltage								25	Drain Current vs. Gate1 Voltage
	V DS = VG1 = 9 V									V DS = 9 V
							Ω
										R G = 390 kΩ
					270	k
20								(mA)	20
							Ω					6 V
					330	k						5 V
						kΩ		D
15									15
					390			I				4 V
						kΩ		Current
10					470
						kΩ			10				3 V
					560
						kΩ		Drain					2 V
					680
5							Ω		5
					820	k Ω
					1M							VG2S = 1 V
			R		5 MΩ
				G	= 1.
0	1.2	2.4	3.8		4.8		6.0		0	2	4	6	8	10
	Gate2 to Source Voltage			VG2S		(V)				Gate1 Voltage		VG1	(V)

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