2SK3290
Silicon N Channel MOS FET
High Speed Switching
ADE-208-744 C (Z) 4th.Edition.
June 1999
Features
•Low on-resistance
RDS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) RDS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA)
•4 V gate drive device.
•Small package (MPAK)
Outline
MPAK
3
1
D
2
G |
1. Source |
2. Gate
3. Drain
S
2SK3290
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
500 |
mA |
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Drain peak current |
Note1 |
2 |
A |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
500 |
mA |
Channel dissipation |
Pch Note 2 |
400 |
mW |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% |
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2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
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Typ |
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Max |
Unit |
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Test Conditions |
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Drain to source breakdown |
V(BR)DSS |
30 |
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— |
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V |
I |
D = 100 µA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
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— |
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V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
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±5 |
µA |
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VGS = ±16 V, VDS = 0 |
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Zero gate voltege drain |
IDSS |
— |
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— |
-1 |
µA |
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VDS = 30 V, VGS = 0 |
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current |
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Gate to source cutoff voltage |
VGS(off) |
1.3 |
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— |
2.3 |
V |
I D = 10µA, VDS = 5 V |
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Static drain to source on state |
RDS(on) |
— |
0.455 |
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0.525 |
Ω |
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ID = 250 mA,VGS = 10 V Note 3 |
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resistance |
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RDS(on) |
— |
0.9 |
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1.25 |
Ω |
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ID = 100 mA,VGS = 4 V Note 3 |
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Forward transfer admittance |
|yfs| |
350 |
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540 |
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— |
mS |
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ID = 250 mA, VDS = 10 V Note 3 |
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Input capacitance |
Ciss |
— |
5 |
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— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
30 |
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— |
pF |
V |
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GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
2 |
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— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
240 |
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— |
ns |
I |
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D = 250 mA, VGS = 10 V |
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Rise time |
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tr |
— |
1700 |
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— |
ns |
R |
L = 40Ω |
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Turn-off delay time |
td(off) |
— |
850 |
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— |
ns |
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Fall time |
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tf |
— |
1300 |
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— |
ns |
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Note: 3. |
Pulse test |
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4. |
Marking is BN |
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2
2SK3290
Main Characteristics
Channel Dissipation *Pch (mW)
Power vs. Temperature Derating |
Maximum Safe Operation Area |
800
600
400
200
0 |
50 |
100 |
150 |
200 |
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Ambient Temperature |
Ta ( °C) |
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5 |
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10 µs |
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2 |
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100 µs |
(A) |
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1.0 |
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1 ms |
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0.5 |
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PW |
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D |
0.2 |
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DC |
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I |
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(1 |
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10 |
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0.1 |
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ms |
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0.05 |
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shot) |
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Current |
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0.02 |
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Operation |
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Operation in this area |
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Drain |
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0.01 |
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is limited by RDS)on) |
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0.005 |
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0.002 |
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0.001 |
Ta=25 °C |
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0.0005 |
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0.2 |
0.5 |
1.0 |
2 |
5 |
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10 |
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20 |
50 |
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0.05 0.1 |
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Drain to Source Voltage |
VDS |
(V) |
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*Value on the alumina ceramic boad (12.5x20x0.7mm) |
Value on the alumina ceramic boad.(12.5x20x0.7mm) |
Drain Current I D (A)
Typical Outout Characteristics
7 V 6 V
2.0
Pulse Test
1.6
5V
1.2
0.8 |
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0.4 |
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4 V |
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VGS = 3 V |
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0 |
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2 |
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10 |
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Drain to Source Voltage |
VDS |
(V) |
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Drain Current I D (A)
Typical Transfer Characteristics
2.0
1.6 |
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25°C |
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75°C |
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1.2 |
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Tc = –25°C |
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0.8 |
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0.4 |
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V DS = 10 V |
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Pulse Test |
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0 |
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2 |
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10 |
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Gate to Source Voltage |
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VGS |
(V) |
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3