HIT 4AK22 Datasheet
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4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance |
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RDS(on) |
0.4 , VGS |
= 10 |
V, ID = 1.5 A |
RDS(on) |
0.55 , VGS |
= 4 |
V, ID = 1.5 A |
•Capable of 4 V gate drive
•Low drive current
•High speed switching
•High density mounting
•Suitable for motor driver, solenoid driver and lamp driver
•Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S)
4AK22
Outline
SP-10
3 |
5 |
D |
D |
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4 |
2 G |
G |
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1 S |
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7 |
9 |
1 2 3 4 |
5 6 7 |
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D |
D |
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8 9 |
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6 |
8 |
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10 |
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G |
G |
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1, 10. |
Source |
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S 10 |
2, 4, 6, 8. |
Gate |
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3, 5, 7, 9. |
Drain |
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item |
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Symbol |
Rating |
Unit |
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Drain to source voltage |
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VDSS |
120 |
V |
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Gate to source voltage |
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VGSS |
±20 |
V |
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Drain current |
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ID |
3 |
A |
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Drain peak current |
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ID(pulse)*1 |
12 |
A |
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Body to drain diode reverse drain current |
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IDR |
3 |
A |
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Channel dissipation |
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Pch (Tc = 25°C)*2 |
28 |
W |
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Channel dissipation |
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Pch*2 |
4 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
4 devices operation |
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