HIT 3SK297 Datasheet

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3SK297

Silicon N-Channel Dual Gate MOS FET

ADE-208-389 1st. Edition

Application

UHF / VHF RF amplifier

Features

Low noise figure.

NF = 1.0 dB typ. at f = 200 MHz

Capable of low voltage operation

Outline

MPAK-4

2

3

1

1. Source

42. Gate1

3.Gate2

4.Drain

3SK297

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDS

12

V

Gate 1 to source voltage

VG1S

±8

V

Gate 2 to source voltage

VG2S

±8

V

Drain current

ID

25

mA

 

 

 

 

Channel power dissipation

Pch

150

mW

 

 

 

 

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

2

3SK297

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test conditions

Drain to source breakdown

V(BR)DSX

12

V

I

 

D =

200 A , VG1S = –3 V,

voltage

 

 

 

 

 

 

 

VG2S = –3 V

 

 

 

 

 

 

 

 

 

Gate 1 to source breakdown

V(BR)G1SS

±8

V

I

 

G1 = ±10 A, VG2S = VDS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate 2 to source breakdown

V(BR) G2SS

±8

V

I

 

G2 = ±10 A, VG1S = VDS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate 1 cutoff current

IG1SS

±100

nA

 

 

VG1S = ±6 V, VG2S = VDS = 0

Gate 2 cutoff current

IG2SS

±100

nA

 

 

VG2S = ±6 V, VG1S = VDS = 0

Drain current

IDS(on)

0.5

10

mA

 

V DS = 6 V, VG1S = 0.75V,

 

 

 

 

 

 

 

 

VG2S = 3 V

 

 

 

 

 

 

 

 

 

Gate 1 to source cutoff voltage

VG1S(off)

0

+1.0

V

 

V DS = 10 V, VG2S = 3V,

 

 

 

 

 

 

 

 

ID =

100 A

Gate 2 to source cutoff voltage

VG2S(off)

0

+1.0

V

 

V DS = 10 V, VG1S = 3V,

 

 

 

 

 

 

 

 

ID =

100 A

Forward transfer admittance

|yfs|

16

20

mS

 

V DS = 6 V, VG2S = 3V,

 

 

 

 

 

 

 

 

ID =

10 mA, f = 1 kHz

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

2.4

2.9

3.4

pF

 

 

VDS = 6 V, VG2S = 3V,

 

 

 

 

 

 

 

 

ID =

10 mA, f = 1 MHz

 

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

0.8

1.0

1.4

pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

0.023

0.04

pF

 

 

 

 

 

 

 

 

 

 

 

 

Power gain

PG

22

25

dB

 

V DS = 6 V, VG2S = 3V,

 

 

 

 

 

 

 

 

ID =

10 mA, f = 200 MHz

 

 

 

 

 

 

 

 

 

 

Noise figure

NF

1.0

1.8

dB

 

 

 

 

 

 

 

 

 

 

 

 

Power gain

PG

12

15

dB

 

V DS = 6 V, VG2S = 3V,

 

 

 

 

 

 

 

 

ID =

10 mA, f = 900 MHz

 

 

 

 

 

 

 

 

 

 

Noise figure

NF

3.2

4.5

dB

 

 

 

 

 

 

 

 

 

 

 

 

Noise figure

NF

2.8

3.5

dB

 

V DS = 6 V, VG2S = 3V,

 

 

 

 

 

 

 

 

ID =

10 mA, f = 60 MHz

 

 

 

 

 

 

 

 

 

 

Note: Marking is “ZP–”

3

HIT 3SK297 Datasheet

3SK297

Channel Power Dissipation Pch (mW)

 

 

Maximum Channel Power

 

 

 

200

 

 

Dissipation Curve

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(mA)

16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

50

 

 

 

 

 

 

 

 

 

 

currentDrain

4

100

 

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

50

100

 

150

 

200

 

 

 

 

Ambient Temperature

Ta (°C)

 

 

 

Typical Output Characteristics

VG2S = 3 V

1.4 V

Pulse test

 

 

1.2 V

1.0 V

0.8 V

0.6 V

VG1S = 0.4 V

2

4

6

8

10

Drain to source voltage

VDS (V)

 

Drain Current vs. Gate1 to Source Voltage

 

20

3.0 V

2.0 V

VDS = 6 V

 

 

(mA)

16

2.5 V

1.5 V

Pulse test

 

 

 

 

 

D

12

 

 

 

I

 

 

 

Drain current

8

 

1.0 V

 

 

 

 

4

 

 

 

 

 

 

VG2S = 0.5 V

 

0

1

2

3

4

5

 

 

 

 

 

 

 

 

Gate1 to source voltage

VG1S

(V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain Current vs. Gate2 to Source Voltage 20

 

 

3.0 V

 

VDS = 6 V

 

16

 

 

2.0 V

Pulse test

(mA)

2.5 V

 

1.5 V

 

 

 

 

 

 

 

 

 

 

 

 

D 12

 

 

1.0 V

 

 

I

 

 

 

 

 

Drain current

8

 

 

 

 

 

4

 

VG1S = 0.5 V

 

 

 

 

 

 

 

 

0

1

2

3

4

5

 

 

Gate2 to source voltage

VG2S

(V)

4

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